Abstract: A water purifier is provided. A water purifier according to one aspect of the present invention may include a housing having a first accommodation space therein, and made of a paper material; a water purifier faucet disposed in the first accommodation space to receive raw water and discharge purified water; and a filter coupled to the water purifier faucet to generate the purified water by filtering the raw water, wherein the water purifier faucet includes a base frame having a second accommodation space therein in which the filter is accommodated; a water inlet module provided on one side of the base frame to supply raw water introduced from the outside to the filter; and a water outlet module provided on the other side of the base frame to receive the purified water generated by the filter and discharge it to the outside.

Abstract: A button-type secondary battery includes a lower can having a bottom surface; an upper can having a top, the upper can and the lower can being coupled to define a space therein; an electrolyte in the space; an electrode assembly in the space and including a negative electrode, a separator, and a positive electrode wound together; a gasket between the upper can and the lower can to electrically insulate the upper and lower cans; a top insulator that is electrically insulating and covering a top surface of the electrode assembly; and a bottom insulator that is electrically insulating and covering a bottom surface of the electrode assembly. The top and bottom insulators are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one of the top insulator and the bottom insulator are coated with a protective layer to prevent thermal shrinkage from occurring.

Abstract: A semiconductor package includes a package substrate, a plurality of semiconductor devices stacked on the package substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the package substrate and the plurality of semiconductor devices, and a molding resin at least partially surrounding the plurality of semiconductor devices and the plurality of underfill fillets. The plurality of underfill fillets include a plurality of protrusions that protrude from spaces between each of the plurality of semiconductor devices or between the package substrate and each of the plurality of semiconductor devices. At least two neighboring underfill fillet protrusions of the plurality of protrusions form one continuous structure without an interface therebetween.

Abstract: A method of driving an electronic device includes displaying a plurality of fingerprint recognition icons on a display device configured to perform fingerprint recognition, and releasing a lock state of the display device through a fingerprint authentication process upon determining at least one first fingerprint recognition icon among the plurality of fingerprint recognition icons is touched. The plurality of fingerprint recognition icons include at least one first fingerprint recognition icon configured to support the fingerprint recognition and at least one second fingerprint recognition icon configured to not support the fingerprint recognition.

Abstract: A button type secondary battery includes a wound electrode assembly; a lower can with the electrode assembly and an electrolyte in the lower can; a top plate to close the lower can; a positive electrode terminal coupled to the top plate through a gasket to be electrically insulated from the top plate with a portion of the positive electrode terminal passing through a hole in the top plate to be bonded to a positive electrode tab; a top insulator covering a top surface of the electrode assembly; and a bottom insulator covering a bottom surface of the electrode assembly. The top insulator and the bottom insulator are each configured to expand in volume by absorbing the electrolyte. Surfaces of at least one or more of the top insulator and the bottom insulator are coated with a protective layer configured to prevent thermal shrinkage from occurring.

Abstract: An apparatus for predicting a traffic speed and a method thereof are provided. The apparatus includes an input device that receives traffic speed sequences of a plurality of links and a controller that detects a spatio-temporal relationship between traffic speeds of the plurality of links and predicts a future traffic speed of a target link based on the spatio-temporal relationship between the traffic speeds of the plurality of links.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Provided is an overlay mark. The overlay mark comprises a substrate, a lower overlay in the substrate, a pattern layer on the substrate, and an upper overlay defining an opening on the pattern layer. The lower overlay does not overlap the upper overlay in a thickness direction of the substrate.

Abstract: A seat for a vehicle having a fold-and-dive function is proposed. When a seatback is rotated forwards and folded, a seat cushion is moved down, so the fold-and-dive function of the seat is realized. When a full-flat mode is realized by the reclining operation of the seatback, a rear end of the seat cushion is moved up, so a step between the seat cushion and the seatback can be significantly reduced or eliminated. Furthermore, a front link connecting a back cushion interlocking frame and a cushion fixing bracket to perform the fold-and-dive function is installed to have directivity where it is inclined rearwards, thus preventing a submarine phenomenon of the seat in the event of a forward collision.

Abstract: A seat for a vehicle in which user convenience may be improved by implementing various postures with a simple configuration is provided. The seat for a vehicle includes a pair of support rails coupled to the vehicle and arranged to be spaced apart from side to side, a first slide unit slidably installed back and forth on the support rail, a second slide unit slidably installed back and forth on the first slide unit, a pair of cushion side frames spaced apart from side to side, a first link member connecting the cushion side frame and the first slide unit, and a second link member connecting the cushion side frame and the second slide unit.

Abstract: The present disclosure relates to a vehicle seat wherein matchability with a luggage box is maintained when the seat is folded, and a relax mode and a backward relax mode can be implemented. The vehicle seat according to the present disclosure includes: a tilting link configured to tilt a front portion of a seat cushion upwards/downwards; and a sliding bracket having one end to which a seat is connected by a hinge structure such that the seat is tilted around the hinge structure, the other end of the sliding bracket being connected so as to slide forwards/backwards.

Abstract: A coil component includes a body; first and second coil portions spaced apart from each other in the body; first and second external electrodes disposed on the body to be spaced apart from each other and connected to both ends of the first coil portion; and first and second ground electrodes spaced apart from each other on the body and connected to both ends of the second coil portion.

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

Abstract: A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 ? to 2.0 ?. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 ? to 5.0 ?. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

Abstract: Provided is a battery pack including a surface pressure maintaining structure is provided, which includes a battery cell and a surface pressure maintaining part that is disposed on one side of the battery cell and applies a surface pressure to the battery cell, wherein the surface pressure maintaining part includes a pair of inclination members that are arranged between the battery cells, move in a horizontal direction to press the battery cell, and have spaces therein, and an insertion member that is inserted between the pair of inclination members, allows the inclination members to slide, and has a space therein.

Abstract: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.

Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern therebetween. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern. The second pinned pattern includes magnetic patterns and non-magnetic patterns, which are alternately stacked. The first pinned pattern is a ferromagnetic pattern consisted of a ferromagnetic element.

Abstract: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.

Abstract: A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 ? to 2.0 ?. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 ? to 5.0 ?. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern therebetween. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern. The second pinned pattern includes magnetic patterns and non-magnetic patterns, which are alternately stacked. The first pinned pattern is a ferromagnetic pattern consisted of a ferromagnetic element.