Abstract: A walk-in apparatus for a vehicle seat includes a walk-in bracket rotatably coupled to a crossbar of a cushion frame and operable to release a fixing member by contacting the fixing member of a seat rail; a compensator bracket operably connected to the walk-in bracket through a hinge, the compensator bracket also being connected to a walk-in cable; and a compensator spring configured to support the walk-in bracket and the compensator bracket, rotate at least one of the walk-in bracket and the compensator bracket, and operate in such a manner as to return the compensator bracket. Even when the walk-in cable is released due to a seatback rebound phenomenon during a walk-in operation, the walk-in bracket maintains a pressing state of the fixing member to maintain continuously an unlocking state of the seat rail, allowing the vehicle seat to move forward smoothly to enable a walk-in operation.

Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.

Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.