Abstract: A circuit for preventing power imbalance of a resonance-type power converter is proposed. The circuit may include a rectifier converting input alternating current (AC) into direct current (DC) and frequency-controlled first and second resonant converter modules configured to receive an output voltage of the rectifier divided into two stages. The circuit may further include a controller outputting a first frequency command for controlling a frequency of a pulse width modulation (PWM) signal supplied to a switching element of a first switching unit of the first resonant converter module. The circuit may further include a frequency compensator compensating for the first frequency command and then outputting a second frequency command for controlling a frequency of a PWM signal supplied to a switching element of a second switching unit of the second resonant converter module, so as to eliminate power imbalance between the first and second resonant converter modules.

Abstract: Disclosed is a method of manufacturing a transparent stretchable substrate according to various embodiments of the present disclosure. The method may include generating a substrate part formed of an elastic material, generating an auxetic including a plurality of unit structures on the substrate part, and generating a fixing part on the substrate part on which the auxetic is generated.

Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.

Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.