Patents by Inventor Sang Hyuk HWANG

Sang Hyuk HWANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 1,3-BENZODIOXOLE DERIVATIVE COMPOUND AND PHARMACEUTICAL COMPOSITION COMPRISING SAME
    Publication number: 20250059180
    Abstract: The present invention relates to a compound represented by chemical formula I, a stereoisomer thereof, a pharmaceutically acceptable salt thereof, a hydrate or solvate thereof, and a pharmaceutical composition comprising same.
    Type: Application
    Filed: January 13, 2023
    Publication date: February 20, 2025
    Inventors: Seung Hwan Kim, Whui Jung Park, Dong Hyuk Shin, Seong Su Jeong, Sang Ho Lee, Ji Young Woo, Woon Heo, Doc Gyun Jeong, Seo Hee Jeong, Jae Kyung Lim, Yun Ha Hwang
  • Method for removing impurities in thin film and substrate processing apparatus
    Patent number: 11972946
    Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.
    Type: Grant
    Filed: January 12, 2022
    Date of Patent: April 30, 2024
    Assignee: EUGENE TECHNOLOGY CO., LTD.
    Inventors: Kyu Jin Choi, Gyu Ho Choi, Sang Hyuk Hwang
  • METHOD FOR REMOVING IMPURITIES IN THIN FILM AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20220230875
    Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.
    Type: Application
    Filed: January 12, 2022
    Publication date: July 21, 2022
    Inventors: Kyu Jin CHOI, Gyu Ho CHOI, Sang Hyuk HWANG