Abstract: A display device includes at least one pixel configured to receive a voltage of an initialization power source, which is supplied to an anode electrode of a light emitting element, when an enable scan signal is supplied to a scan line, and a scan driver. The scan driver is configured to supply the enable scan signal to the scan line. The enable scan signal supplied to the scan line by the scan driver has a same width during an active area of a frame regardless of an image refresh rate, and the width of the enable scan signal supplied to the scan line is changed by the scan driver during a blank area of the frame, corresponding to the image refresh rate.

Abstract: The present invention relates to a compound represented by chemical formula I, a stereoisomer thereof, a pharmaceutically acceptable salt thereof, a hydrate or solvate thereof, and a pharmaceutical composition comprising same.

Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.

Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.