Abstract: A switch apparatus, includes: a base module including a base case, and a moving magnet movably mounted in the base case; and a manipulation module including a manipulation case, and a first magnet fixedly mounted in the manipulation case, wherein the moving magnet moves between a hold position and a releasable position, the hold position refers to a position in which the manipulation module is held onto the base module as an attractive force acts between the moving magnet and the first magnet, and the releasable position refers to a position in which the manipulation module is releasable from the base module as a repulsive force acts between the moving magnet and the first magnet.

Abstract: Provided is a biphasic electrolyte solution including: an aqueous electrolyte solution layer including a kosmotropic metal salt and water; and a nonaqueous electrolyte solution layer including a second metal salt and a nonaqueous organic solvent, and the biphasic electrolyte solution may provide a battery which satisfies both excellent battery performance and life characteristics.

Abstract: A method for forming a field oxide film in a semiconductor device comprises the steps of sequentially forming a pad oxide film and a first buffer silicon nitride film on a silicon substrate, and then forming a first patterned mask on the first buffer silicon nitride film. Subsequently, the resulting exposed part of the first buffer silicon nitride film is etched to expose a portion of the pad oxide film. The first patterned mask is them removed. A buffer oxide film is formed on the resulting exposed part of the pad oxide film and the etched first buffer silicon nitride film. Then, a second buffer silicon nitride film and a second patterned mask is sequentially formed on the buffer oxide film, followed by etching of the resulting exposed part of the second buffer silicon nitride. The second patterned mask is then removed, followed by a formation of a field oxide film by thermal oxidation on the resulting structure. The second buffer silicon nitride is then removed.

Abstract: A method for removing residual material which remains in a cavity after an anisotropic etching process in the manufacture of a partially completed multi-layer semiconductor device, where the cavity is in contact with at least one anisotropic etch-stop layer and is accessible by an etchable layer is disclosed. A plasma etching apparatus which includes a chamber is utilized. The etchable layer is first etched by anisotropic etching in the chamber under predetermined conditions in the plasma etching apparatus until a top of the etch-stop layer is exposed. A plasma scattering etching process is then performed to remove the residual material in the cavity by changing the predetermined conditions of the anisotropic etching process to produce plasma scattering, thereby removing the residual material from the cavity.

Abstract: A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishing a predetermined initial temperature in a heating chamber with an ultraviolet light source. A wafer, on which a SOG film to be cured is formed, is then introdued into the heated chamber and the temperature gradually increased to a predetermined maximum temperature. The SOG film is irradiated with ultraviolet light at a predetermined wavelength simultaneously with the application of heat at the maximum temperature for a predetermined time. The wafer is then cooled.