Patents by Inventor Sang-Ick Joo

Sang-Ick Joo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8951881
    Abstract: A method of fabricating a nonvolatile memory device includes forming trenches in a substrate defining device isolation regions therein and active regions therebetween. The trenches and the active regions therebetween extend into first and second device regions of the substrate. A sacrificial layer is formed in the trenches between the active regions in the first device region, and an insulating layer is formed to substantially fill the trenches between the active regions in the second device region. At least a portion of the sacrificial layer in the trenches in the first device region is selectively removed to define gap regions extending along the trenches between the active regions in the first device region, while substantially maintaining the insulating layer in the trenches between the active regions in the second device region. Related methods and devices are also discussed.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: February 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Sik Lee, Jang-Hyun You, Jee-Hoon Han, Young-Woo Park, Sung-Hoi Hur, Sang-Ick Joo
  • Publication number: 20140248755
    Abstract: A method of fabricating a nonvolatile memory device includes forming trenches in a substrate defining device isolation regions therein and active regions therebetween. The trenches and the active regions therebetween extend into first and second device regions of the substrate. A sacrificial layer is formed in the trenches between the active regions in the first device region, and an insulating layer is formed to substantially fill the trenches between the active regions in the second device region. At least a portion of the sacrificial layer in the trenches in the first device region is selectively removed to define gap regions extending along the trenches between the active regions in the first device region, while substantially maintaining the insulating layer in the trenches between the active regions in the second device region. Related methods and devices are also discussed.
    Type: Application
    Filed: May 16, 2014
    Publication date: September 4, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-Sik Lee, Jang-Hyun You, Jee-Hoon Han, Young-Woo Park, Sung-Hoi Hur, Sang-Ick Joo
  • Patent number: 8753955
    Abstract: A method of fabricating a nonvolatile memory device includes forming trenches in a substrate defining device isolation regions therein and active regions therebetween. The trenches and the active regions therebetween extend into first and second device regions of the substrate. A sacrificial layer is formed in the trenches between the active regions in the first device region, and an insulating layer is formed to substantially fill the trenches between the active regions in the second device region. At least a portion of the sacrificial layer in the trenches in the first device region is selectively removed to define gap regions extending along the trenches between the active regions in the first device region, while substantially maintaining the insulating layer in the trenches between the active regions in the second device region. Related methods and devices are also discussed.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: June 17, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Sik Lee, Jang-Hyun You, Jee-Hoon Han, Young-Woo Park, Sung-Hoi Hur, Sang-Ick Joo
  • Publication number: 20120202335
    Abstract: A method of fabricating a nonvolatile memory device includes forming trenches in a substrate defining device isolation regions therein and active regions therebetween. The trenches and the active regions therebetween extend into first and second device regions of the substrate. A sacrificial layer is formed in the trenches between the active regions in the first device region, and an insulating layer is formed to substantially fill the trenches between the active regions in the second device region. At least a portion of the sacrificial layer in the trenches in the first device region is selectively removed to define gap regions extending along the trenches between the active regions in the first device region, while substantially maintaining the insulating layer in the trenches between the active regions in the second device region. Related methods and devices are also discussed.
    Type: Application
    Filed: November 21, 2011
    Publication date: August 9, 2012
    Inventors: Dong-Sik Lee, Jang-Hyun You, Jee-Hoon Han, Young-Woo Park, Sung-Hoi Hur, Sang-Ick Joo