Patents by Inventor Sang Ick Lee

Sang Ick Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240106073
    Abstract: Provided are a separator coating composition for a secondary battery including inorganic particles and a silane salt compound having a specific structure, a separator using the same, and an electrochemical device including the same. Specifically, a separator coating composition for a secondary battery which implements adhesion between an inorganic material layer and a porous substrate without including an acid/polymer-based organic binder in a coating composition for forming the inorganic material layer on one or both surfaces of the porous substrate and does not need a separate dispersing agent for dispersing the inorganic particles, a separator manufactured using the same, and an electrochemical device including the separator are provided.
    Type: Application
    Filed: September 13, 2023
    Publication date: March 28, 2024
    Inventors: Tae Wook KWON, Sang Ick LEE, Won Sub KWACK, Cheol Woo KIM, Hyo Shin KWAK, Heung Taek BAE
  • Patent number: 11827650
    Abstract: Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: November 28, 2023
    Assignee: DNF CO., LTD.
    Inventors: Myong Woon Kim, Sang Ick Lee, Sung Woo Cho, Mi Jeong Han, Haeng Don Lim
  • Patent number: 11749522
    Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: September 5, 2023
    Assignee: DNF CO., LTD.
    Inventors: Sung Gi Kim, Jeong Joo Park, Joong Jin Park, Se Jin Jang, Byeong-Il Yang, Sang-Do Lee, Sam Dong Lee, Sang Ick Lee, Myong Woon Kim
  • Publication number: 20230250114
    Abstract: Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.
    Type: Application
    Filed: February 7, 2023
    Publication date: August 10, 2023
    Inventors: Yong Hee KWONE, Young Jae IM, Sang Yong JEON, Tae Seok BYUN, Sang Chan LEE, Sang Ick LEE
  • Publication number: 20230203655
    Abstract: Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.
    Type: Application
    Filed: December 27, 2022
    Publication date: June 29, 2023
    Inventors: Yong Hee KWONE, Young Jae IM, Sang Yong JEON, Tae Seok BYUN, Sang Chan LEE, Sang Ick LEE
  • Publication number: 20230089296
    Abstract: Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.
    Type: Application
    Filed: March 2, 2022
    Publication date: March 23, 2023
    Inventors: Sung Gi KIM, Jeong Joo PARK, Joong Jin PARK, Se Jin JANG, Byeong-il YANG, Sang-Do LEE, Sam Dong LEE, Sang Ick LEE, Myong Woon KIM
  • Publication number: 20220328931
    Abstract: Provided are a separator for a secondary battery, a method for manufacturing the same, and a lithium secondary battery including the same, and particularly, a separator for a secondary battery which has sufficient thermal resistance and mechanical properties even without using a polymer-based organic binder lacking chemical stability, by adopting a metal alkanoate having a polar group as a binder for binding among particles forming a porous active layer and also between the porous active layer and a porous substrate. A method for manufacturing the same, and a lithium secondary battery including the same are also provided.
    Type: Application
    Filed: April 5, 2022
    Publication date: October 13, 2022
    Inventors: Won Sub Kwack, Sang Ick Lee, Tae Wook Kwon, Yun Bong Kim, Heung Taek Bae, Sang Yoon Ji
  • Patent number: 11459653
    Abstract: The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: October 4, 2022
    Assignee: DNF CO., LTD.
    Inventors: Myong Woon Kim, Sang Ick Lee, Jang Woo Seo, Sang Yong Jeon, Haeng Don Lim
  • Patent number: 11447859
    Abstract: Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: September 20, 2022
    Assignee: DNF CO., LTD.
    Inventors: Myong Woon Kim, Sang Ick Lee, Sang Jun Yim, Won Mook Chae, Jeong Hyeon Park, Kang Yong Lee, A Ra Cho, Joong Jin Park, Heang Don Lim
  • Publication number: 20220275010
    Abstract: Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.
    Type: Application
    Filed: August 13, 2020
    Publication date: September 1, 2022
    Inventors: Se Jin JANG, Sung Gi KIM, Jeong Joo PARK, Tae Seok BYUN, Yong Hee KWONE, Yeong Hun KIM, Haengdon LIM, Sang Yong JEON, Sang Ick LEE
  • Patent number: 11393676
    Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: July 19, 2022
    Assignee: DNF CO., LTD.
    Inventors: Sung Gi Kim, Jeong Joo Park, Joong Jin Park, Se Jin Jang, Byeong-Il Yang, Sang-Do Lee, Sam Dong Lee, Sang Ick Lee, Myong Woon Kim
  • Patent number: 11390635
    Abstract: Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.
    Type: Grant
    Filed: November 22, 2018
    Date of Patent: July 19, 2022
    Assignee: DNF CO., LTD.
    Inventors: Sung Gi Kim, Joong Jin Park, Byeong-il Yang, Se Jin Jang, Gun-Joo Park, Jeong Joo Park, Hee Yeon Jeong, Sam Dong Lee, Sang Ick Lee, Myong Woon Kim
  • Patent number: 11358974
    Abstract: Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: June 14, 2022
    Assignee: DNF CO., LTD.
    Inventors: Sung Gi Kim, Jeong Joo Park, Joong Jin Park, Se Jin Jang, Byeong-il Yang, Sang-Do Lee, Sam Dong Lee, Sang Ick Lee, Myong Woon Kim
  • Publication number: 20220181578
    Abstract: The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.
    Type: Application
    Filed: March 6, 2020
    Publication date: June 9, 2022
    Inventors: Myoung Woon KIM, Sang Ick LEE, Se Jin JANG, Sung Gi KIM, Jeong Joo PARK, Won Mook CHAE, A Ra CHO, Byeong il YANG, Joong Jin PARK, Gun Joo PARK, Sam Dong LEE, Haeng don LIM, Sang Yong JEON
  • Publication number: 20220139704
    Abstract: Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
    Type: Application
    Filed: January 10, 2022
    Publication date: May 5, 2022
    Inventors: Sung Gi KIM, Jeong Joo PARK, Joong Jin PARK, Se Jin JANG, Byeong-il YANG, Sang-Do LEE, Sam Dong LEE, Sang Ick LEE, Myong Woon KIM
  • Patent number: 11319333
    Abstract: Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: May 3, 2022
    Assignee: DNF CO., LTD
    Inventors: Sung Gi Kim, Se Jin Jang, Byeong-il Yang, Joong Jin Park, Sang-Do Lee, Jeong Joo Park, Sam Dong Lee, Gun-Joo Park, Sang Ick Lee, Myong Woon Kim
  • Patent number: 11235315
    Abstract: The present invention relates to an oligomerization catalyst including a transition metal or transition metal precursor, a halogen-substituted organic ligand, and a heteroatom ligand, and to a method for selectively preparing 1-hexene or 1-octene from ethylene using the catalyst.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: February 1, 2022
    Assignees: SK Innovation Co., Ltd., SK Global Chemical Co., Ltd.
    Inventors: Sang Ick Lee, Eun Jung Baek, Sun Young Kim, Hyo Seung Park, Min Seon Jung
  • Publication number: 20220018017
    Abstract: The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.
    Type: Application
    Filed: November 13, 2019
    Publication date: January 20, 2022
    Inventors: Myong Woon KIM, Sang Ick LEE, Jang Woo SEO, Sang Yong JEON, Haeng Don LIM
  • Publication number: 20210222294
    Abstract: Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.
    Type: Application
    Filed: April 26, 2018
    Publication date: July 22, 2021
    Applicant: DNF Co., Ltd.
    Inventors: Myong Woon KIM, Sang Ick LEE, Sang Jun YIM, Won Mook CHAE, Jeong Hyeon PARK, Kang Yong LEE, A Ra CHO, Joong Jin PARK, Heang Don LIM
  • Patent number: 11062940
    Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: July 13, 2021
    Assignees: Samsung Electronics Co., Ltd., DNF Co., Ltd.
    Inventors: Chang-Woo Sun, Ji-Eun Yun, Jae-Soon Lim, Youn-Joung Cho, Myong-Woon Kim, Kang-yong Lee, Sang-Ick Lee, Sung-Woo Cho