Abstract: Provided is a method of forming a superconducting wire, the method including forming a superconducting precursor film on a substrate, the super conducting precursor film containing Re, Ba, and Cu having a composition in which Ba is poor and Cu is rich compared to stoichiometric ReBCO(Gd1Ba2Cu3O7?y, 0?y?6, Re: Rare earth element), heating the substrate to melt the superconducting precursor film, providing an oxygen gas having an oxygen partial pressure of about 10 mTorr to about 200 mTorr on the molten superconducting precursor film to form a superconducting layer including an epitaxial superconductor biaxially aligned only in the c-axis direction perpendicular to the substrate, and cooling the substrate.

Abstract: Provided is a method of forming a superconducting wire, the method including forming a superconducting precursor film on a substrate, the super conducting precursor film containing Re, Ba, and Cu having a composition in which Ba is poor and Cu is rich compared to stoichiometric ReBCO(Gd1Ba2Cu3O7?y, 0?y?6, Re: Rare earth element), heating the substrate to melt the superconducting precursor film, providing an oxygen gas having an oxygen partial pressure of about 10 mTorr to about 200 mTorr on the molten superconducting precursor film to form a superconducting layer including an epitaxial superconductor biaxially aligned only in the c-axis direction perpendicular to the substrate, and cooling the substrate.

Abstract: A super conductor is formed by a process including a first step of forming liquid-phase rare earth-copper-barium oxide by heat treating a superconductor precursor including a rare earth element, barium, and copper, a second step of forming a first superconductor of the rare earth-copper-barium oxide that is epitaxially grown from the liquid-phase rare earth-copper-barium oxide, and a third step of forming a second superconductor of the rare earth-copper-barium oxide by heat treating the first superconductor, wherein the heat treatment of the third step is performed in an atmosphere in which the rare earth-copper-barium oxide has no liquid phase.

Abstract: Provided is a method of forming a ceramic wire. In the method, a ceramic precursor film is deposited on a wire substrate. Then, the wire substrate on which the ceramic precursor film is deposited is treated by heating. For treating the wire substrate by heating, a temperature of the wire substrate and/or an oxygen partial pressure of the wire substrate are controlled such that the ceramic precursor film is in a liquid state and an epitaxy ceramic film is formed from the liquid ceramic precursor film on the wire substrate.

Abstract: A super conductor is formed by a process including a first step of forming liquid-phase rare earth-copper-barium oxide by heat treating a superconductor precursor including a rare earth element, barium, and copper, a second step of forming a first superconductor of the rare earth-copper-barium oxide that is epitaxially grown from the liquid-phase rare earth-copper-barium oxide, and a third step of forming a second superconductor of the rare earth-copper-barium oxide by heat treating the first superconductor, wherein the heat treatment of the third step is performed in an atmosphere in which the rare earth-copper-barium oxide has no liquid phase.

Abstract: Provided is a method of forming a superconducting body. The method includes providing amorphous rare-earth-copper-barium oxide and performing a heat treatment on the amorphous rare-earth-copper-barium oxide to form a superconductor containing distributed rare-earth oxide grains.

Abstract: Methods of forming a superconducting wire are provided. The method may include dissolving a superconducting material in an acid not including fluorine to form a superconducting precursor solution, providing the superconducting precursor solution on a substrate to form a superconducting precursor layer, and controlling an oxygen partial pressure of a processing chamber provided with the substrate and/or a temperature of the substrate in order that the superconducting precursor layer partially have a liquid phase, thereby forming an epitaxial superconducting layer on the substrate.

Abstract: Provided is a method of forming a ceramic wire. In the method, a ceramic precursor film is deposited on a wire substrate. Then, the wire substrate on which the ceramic precursor film is deposited is treated by heating. For treating the wire substrate by heating, a temperature of the wire substrate and/or an oxygen partial pressure of the wire substrate are controlled such that the ceramic precursor film is in a liquid state and an epitaxy ceramic film is formed from the liquid ceramic precursor film on the wire substrate.

Abstract: A method for forming a precursor solution for metal organic deposition includes dissolving an additive-free first precursor composed of a rare earth element, a second precursor comprising barium, and a third precursor composed of copper into an acid to form a compound solution; dissolving the compound solution into a solvent to form a pre-precursor solution; and evaporating the solvent from the pre-precursor solution to form a precursor solution having an increased viscosity; wherein at least one of the first precursor, the second precursor, and the third precursor is dissolved into a fluorine-free acid. A method for forming a superconducting thick film from the above precursor solution includes forming a thick film by a one-time coating of the precursor solution having an increased viscosity onto a biaxially-textured base followed by heat treating to form the superconducting thick film having a thickness of about 0.2 ?m or more and having no cracking.

Abstract: The present invention relates to precursor powder for sintering used for preparing a dielectric material. Particularly, the present invention is directed to a precursor powder for sintering used for preparing a dielectric material, comprising a first material powder and a second material powder, a core-shell structured precursor powder for sintering used for a dielectric material, wherein said core is composed of a first material and said shell is composed of a second material, and process for preparing thereof. According to the present invention, a relative dielectric constant of said first material is larger than that of said second material.

Abstract: The present invention relates to a method of forming a precursor solution for metal organic deposition and a method of forming a superconducting thick film using the same. A first precursor comprising one rare earth element, a second precursor comprising barium, and a third precursor comprising copper are dissolved into acid to form a compound solution, the compound solution is dissolved into solvent to form a pre-precursor solution, and the solvent of the pre-precursor solution is evaporated to form a precursor solution with the increased viscosity. A sufficiently thick film can be formed without any cracking through only one-time coating.

Abstract: The present invention relates to a sintered material for a dielectric substance and a process for preparing the same. Particularly, the present invention is directed to a sintered material for a dielectric substance comprising a core-shell microstructure including a core of a first material and a shell of a second material, wherein a relative dielectric constant of said first material is larger that a relative dielectric constant of said second material.

Abstract: There is provided a method of fabricating a precursor solution for a metal organic deposition method using a superconducting oxide as a starting material, wherein the method includes dispersing a superconducting material powder in a TFA acid aqueous solution, heating to dissolve the powder in the TFA solution, increasing a temperature of a hot substrate if the powder is completely dissolved and the solution is clear, continuously heating until the solution is vaporized and is in a viscous jelly state, stopping heating if the solution loses its flowing property completely, cooling the solution, and dissolving the compound in the jelly state, hardened at a room temperature, into an organic solvent to provide a metal organic deposition solution for coating. There is also provided a method of fabricating a thin film-type superconductor using a metal organic deposition method.

Abstract: There is provided a method of fabricating a precursor solution for a metal organic deposition method using a superconducting oxide as a starting material, the method including dispersing a superconducting material powder in a TFA acid aqueous solution and heating them to dissolve the powder in the TFA solution; increasing a temperature of a hot substrate if the powder is completely dissolved, and the solution is clear, and continuously heating until the solution is vaporized and is in a viscous jelly state; stopping the heating if the solution loses its flowing property completely, and cooling the solution; and dissolving the compound in the jelly state, hardened at a room temperature, into an organic solvent, to provide metal organic deposition solution for coating.

Abstract: Disclosed is a positive active material for a rechargeable lithium battery and a method of preparing the same. The positive active material includes a LiCoO2 core and a metal selected from a group consisting of Al, Mg, Sn, Ca, Ti, Mn and mixtures thereof. The metal has a concentration gradient from a surface of the core to a center of the core. The method of preparing a positive active material for a rechargeable lithium battery includes the steps of dissolving a metal compound in alcohol to prepare a metal compound solution in a sol state, coating LiCoO2 with the metal compound solution in the sol state and sintering the coated LiCoO2 at 150 to 500° C.

Abstract: Disclosed is a positive active material for a rechargeable lithium battery and a method of preparing the same. The positive active material includes a LiCoO2 core and a metal selected from a group consisting of Al, Mg, Sn, Ca, Ti, Mn and mixtures thereof. The metal has a concentration gradient from a surface of the core to a center of the core.

Abstract: A high critical temperature and high critical current density superconductor containing a matrix phase of a metal oxide expressed by the formula RE.sup.1 Ba.sub.2 Cu.sub.3 O.sub.p wherein RE.sup.1 stands for La, Nd, Sm, Eu or Gd and p is a number of 6.8-7.2, a first dispersed phase of a metal oxide expressed by the formula RE.sup.2.sub.1+d Ba.sub.2-d Cu.sub.3 O.sub.q wherein RE.sup.2 stands for La, Nd, Sm, Eu or Gd, d is a number of 0<d<0.5 and q is a number of 6.0-7.2 and a second dispersed phase of a metal oxide expressed by the formula RE.sup.3.sub.4-2x Ba.sub.2+2x Cu.sub.2-x O.sub.10-y wherein RE stands for La or Nd, x is a number of 0<x .English Pound.0.25 and y is a number of 0<y<0.5. The first and second phases are dispersed in the matrix. The above superconductor may be prepared by cooling a partial melt having a temperature of 1,000.degree.-1,300.degree. C. and containing a major molar amount of RE.sup.1 Ba.sub.2 Cu.sub.3 O.sub.p and a minor molar amount of RE.sup.3.sub.4-2x Ba.sub.

Abstract: A composite material having a plurality of sections integrated into a unitary structure and each including a bulk of a superconductive metal oxide of RE--Ba--Cu--O wherein RE represents a rare earth element, the bulk of each of the sections having pinning centers and capable of trapping a magnetic field. A first one of the sections has a superconductive current density different from that of a second one of the sections. The composite material may be produced by assembling preformed respective sections into a unitary structure or by immersing one of the sections in a solution to grow crystal of Y--Ba--Cu--O superconductive on that section, followed by trimming.

Abstract: A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I):(R.sup.1.sub.1-x, Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I)wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.

Abstract: A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I):(R.sup.1.sub.1-x,Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I)wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.