Abstract: An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.

Abstract: An antenna includes branches having substantially identical shapes. The branches are symmetrically disposed about a central point and extend along at least two concentric patterns whose geometric centers coincide with the central point. The branches each include pattern-forming portions that lie entirely within the concentric patterns, and at least one connecting portion extending between and connecting the pattern-forming portions. Input/output terminals for allowing a voltage to be impressed across the branches are provided at ends of each of the branches.

Abstract: A plasma etching apparatus having an upper electrode, a lower electrode corresponding to the upper electrode, to place a substrate on, and a high frequency power generator to generate plasma by applying high frequency power to the upper electrode or the lower electrode, wherein a distance between the upper electrode and the lower electrode varies discontinuously on a portion of opposite surfaces of the electrodes by varying the shape of the upper electrode.

Abstract: An inductively-coupled antenna (ICP) in a plasma generating apparatus comprises an inner antenna segment having an annular shape and at least one outer antenna segment approximately concentrically placed outside of the inner antenna segment, and connected to the inner antenna segment in series, wherein at least one of the inner antenna segments and the outer antenna segments have a plurality of annular coils connected in parallel with each other and having a different diameter from each other. Accordingly, the present invention provides an ICP antenna and plasma generating apparatus using the same having a simple structure, a reduced inductance, and an improved uniformity of plasma density.