Abstract: Provided is a forceps driving apparatus including a body, a gripper installed to be received in the body and formed to be open and closed, an opening and closing member rotatably installed in the body to press or release two sides of the gripper by rotation, an elastic member connected to one side of the opening and closing member to provide an elastic force to the opening and closing member, an actuator connected to the other side of the opening and closing member to rotate the opening and closing member by contraction or extension, and a force sensing module to measure a gripping force of the gripper during the rotation of the opening and closing member.

Abstract: A plasma processing chamber includes a chamber body and a lid assembly coupled to the chamber body to define a processing volume. The lid assembly includes a backing plate coupled to the chamber body, a diffuser with a plurality of openings formed therethrough, and a heat conductive spacer disposed between and coupled to the backing plate and the diffuser to transfer heat from the diffuser to the backing plate. The plasma processing chamber further includes a substrate support disposed within the processing volume.

Abstract: The present invention provides integrated circuit devices that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided. Related methods of fabricating integrated circuit devices are also provided.

Abstract: The present invention provides integrated circuit devices that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided. Related methods of fabricating integrated circuit devices are also provided.

Abstract: The present invention provides an integrated circuit device that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1−xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided.

Abstract: The present invention provides an integrated circuit device that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided.

Abstract: A method for etching a metal layer of a semiconductor device is provided. A metal layer formed on a substrate is etched using a hard mask and a mixed etching gas containing chlorine and oxygen in which the ratio of oxygen gas is preferably about 0.5-0.8. Under such conditions, a metal layer pattern of a fine profile is formed. Since the hard mask is thin, it is possible to prevent etch reactants generated in a process of etching the metal layer from being deposited on the side surface of the resultant formed of the metal layer pattern and the hard mask. As a result, no additional processing is required to remove the etch reactants from the side surfaces and the metal layer etching process is simplified.