Abstract: A method for fabricating a phase shift mask includes obtaining a layout of a mask region which sets up alight transmitting region; obtaining a layout of a phase shift region placed in a border portion of the mask region by disposing a shadow core region for light-shielding in a middle portion of the mask region; forming phase shift patterns following the layout of the phase shift region on a light transmitting substrate; and forming a shadow core layer pattern which exposes a portion of the substrate corresponding to the light transmitting region between the phase shift patterns and covering and light-shielding the portion of the substrate corresponding to the shadow core region, and a mask fabricated by the method.

Abstract: An etching apparatus includes: an etching space including a chamber; a chuck in the chamber and on which a transparent object to be etched can be loaded; a light source configured to irradiate light onto the object to be etched in order to detect a degree of etching of the object to be etched; and a detector configured to detect an intensity of the light having transmitted through the object to be etched after being emitted from the light source.

Abstract: Disclosed herein is a method for manufacturing a phase shift mask. An embodiment of the disclosed method includes forming a conductive layer on a mask substrate, irradiating a predetermined area of the mask substrate on which the conductive layer is formed with an electron beam to selectively reduce a portion of silicon oxide (SiO2) in the substrate to silicon (Si), etching only the predetermined area converted to Si, and removing the conductive layer to form the phase shift mask.

Abstract: A method for fabricating a phase shift mask includes obtaining a layout of a mask region which sets up alight transmitting region; obtaining a layout of a phase shift region placed in a border portion of the mask region by disposing a shadow core region for light-shielding in a middle portion of the mask region; forming phase shift patterns following the layout of the phase shift region on a light transmitting substrate; and forming a shadow core layer pattern which exposes a portion of the substrate corresponding to the light transmitting region between the phase shift patterns and covering and light-shielding the portion of the substrate corresponding to the shadow core region, and a mask fabricated by the method.

Abstract: Disclosed herein is a method for manufacturing a phase shift mask. An embodiment of the disclosed method includes forming a conductive layer on a mask substrate, irradiating a predetermined area of the mask substrate on which the conductive layer is formed with an electron beam, etching the predetermined area, and removing the conductive layer to form the phase shift mask.