Abstract: The present invention relates to an electrode tab welding apparatus for welding electrode tabs of a pouch-shaped battery to each other in a state of gathering the electrode tabs using tab guides in a preliminary welding step of welding the electrode tabs to each other before welding the electrode tabs and an electrode lead of the pouch-shaped battery to each other and an electrode tab welding method using the same.

Abstract: A display device includes: a first pixel electrode disposed in a first emission area, on a substrate; an insulating layer covering edges of the first pixel electrode; a first light-emitting layer disposed on the first pixel electrode and the insulating layer; a first common electrode disposed on the first light-emitting layer; banks disposed on the insulating layer and surrounding the first emission area; and a first organic pattern surrounding the first emission area, disposed on the banks, and including the same material as the first light-emitting layer. Side surfaces of each of the banks are spaced apart from side surfaces of the insulating layer.

Abstract: A planar transformer and a converter including the same include a first core unit including a first receiving portion extending in a first direction; a second core unit spaced from the first core unit, disposed in parallel with the first core unit in a second direction thereof, and including a second receiving portion extending in the first direction; a first coil unit including a first through hole formed in a center portion thereof and a first coil pattern passing through the first receiving portion and the second receiving portion around the first through hole to form a turn; and a second coil unit including a second through hole formed in a center portion thereof and aligned with the first through hole in a third direction thereof, and a second coil pattern passing through the first receiving portion and the second receiving portion around the second through hole.

Abstract: Disclosed herein are an apparatus and method for updating an Internet-based malware detection engine using virtual machine scaling. The method may include creating a scaling group and an update group set based on a first virtual machine image, creating a second virtual machine image for a running virtual machine in response to occurrence of a snapshot event in the virtual update group run based on the first virtual machine image, modifying the scale-out image of the scaling group to the second virtual machine image, updating the scaling group by triggering a scale-out event and a scale-in event in the scaling group in response to occurrence of an update event, and modifying the scale-in image of the scaling group to the second virtual machine image.

Abstract: A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.

Abstract: A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.

Abstract: A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.

Abstract: A SOC system includes a central processing unit; a memory management unit receiving a virtual address from the central processing unit and converting the virtual address into a physical address; a main memory implemented by a volatile memory and directly accessed through the physical address converted by the memory management unit; and a storage implemented by a nonvolatile memory separate from the main memory and including a first area directly accessed through the physical address converted by the memory management unit.

Abstract: A memory system comprises a central processing unit. A memory management unit receives a virtual address from the central processing unit. The memory management unit converts the virtual address into a physical address. A main memory is assessed based on the physical address. The main memory stores data used the central processing unit. The main memory includes a first area including a non-volatile memory. First file data having a first characteristic is included in the first area of the main memory. The main memory includes a second area including a volatile memory. Second file data having a second characteristic different from the first characteristic is included in the second area of the main memory. A management table manages only the first area of the first and second areas of the main memory.

Abstract: A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.

Abstract: Provided is a semiconductor device including a thin film transistor with at least one protruding impurity region and a method for manufacturing the same. The semiconductor device includes bulk transistors formed on a semiconductor substrate and an interlayer insulation layer covering the bulk transistor. At least one thin film transistor is formed on the interlayer insulation layer including impurity regions adjacent thereto. At least one impurity region of the thin film transistor protrudes higher than the other impurity region.

Abstract: The present invention relates to a bioluminescent organism for detecting toxic substances, specifically to a microorganism YH9-RC which shows very sensitively change in the degree of luminescence when it contacts toxic substances, a method for detecting toxic substances using the changes in the degree of luminescence of the microorganism, and a kit for detecting toxic substances. Toxic substances of very low concentration can be detected using the luminescent organism YH9-RC of the present invention.