Abstract: The present invention relates to electrode slurry coating apparatus and method, the present invention ultimately allowing the process efficiency to be increased and rate of errors to be reduced when double-layer structured active material layers are formed by temporally adjusting the height of first and second discharge outlets through which active material is discharged.

Abstract: An excavating pump apparatus and a pile installation apparatus having the same are disclosed. An excavating pump apparatus in accordance with an embodiment of the present invention may include: an excavation head being inserted into an inner space of a pile through an open hole opening the inner space of the pile and being configured to crush seafloor sediments and allow the crushed seafloor sediments to be flowed therein; an outlet conduit connected to the excavation head and being a channel for discharging the seafloor sediments flowed into the excavation head to an outside of the pile; and a pump configured to move the seafloor sediments through the outlet conduit by providing a pump pressure to the outlet conduit.

Abstract: A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.

Abstract: A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.

Abstract: An excavating pump apparatus and a pile installation apparatus having the same are disclosed.

Abstract: A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

Abstract: A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Abstract: The present invention relates to a grain roasting apparatus in which a blower is installed at one side of a body having a support at a lower portion of the same, a heated air flow path is installed in the blower, a heater is provided, a peel collecting port and a discharge port are installed at the other side of the body, rotation portions are installed in an upper portion of the heated air flow path and an upper portion of the discharging port, respectively, a rotary drum is installed in the rotation portions, rotation members are rotated together with the rotary drum, the rotary drum is inserted into the rotation members, the rotary is installed eccentrically about a rotation center, support portions are installed opposite each other at both ends of the same, a heated air flow port having a net and connected with the heated air flow path is protruded from one side of the support, the heated air inlet is inserted into an insertion portion of the rotary port, respectively, and is supported therein, a ring gea

Abstract: The present invention relates to a grain roasting apparatus in which a blower is installed at one side of a body having a support at a lower portion of the same, a heated air flow path is installed in the blower, a heater is provided, a peel collecting port and a discharge port are installed at the other side of the body, rotation portions are installed in an upper portion of the heated air flow path and an upper portion of the discharging port, respectively, a rotary drum is installed in the rotation portions, rotation members are rotated together with the rotary drum, the rotary drum is inserted into the rotation members, the rotary is installed eccentrically about a rotation center, support portions are installed opposite each other at both ends of the same, a heated air flow port having a net and connected with the heated air flow path is protruded from one side of the support, the heated air inlet is inserted into an insertion portion of the rotary port, respectively, and is supported therein, a ring gea

Abstract: A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.