Patents by Inventor Sang Kee Yoon
Sang Kee Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230350104Abstract: A lens includes a lens unit including an uneven surface structure, and an uneven layer formed on at least a portion of the uneven surface structure of the lens unit and comprising an uneven surface structure. The uneven surface structure of the lens unit and the uneven surface structure of the uneven layer have different shapes.Type: ApplicationFiled: January 25, 2023Publication date: November 2, 2023Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung LEE, Sang Kee YOON, Jin Woo YI, Joung Hun KIM, Jae Goon AUM
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Publication number: 20230216470Abstract: A bulk acoustic wave resonator includes a substrate; a central portion including a first portion of a first electrode, a first portion of a piezoelectric layer, and a first portion of a second electrode laminated in order on the substrate; and a reflective region disposed laterally of the central portion and including a second portion of the first electrode, an insertion layer, a second portion of the piezoelectric layer, and a second portion of the second electrode. A side surface of the insertion layer adjacent to the central portion has an inclined surface, the first portion of the second electrode and the second portion of the second electrode are coplanar, and an end of the second electrode overlaps the inclined surface of the insertion layer in the reflective region.Type: ApplicationFiled: May 25, 2022Publication date: July 6, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Won HAN, Hwa Sun LEE, Jeong Hoon RYOU, Moon Chul LEE, Tae Yoon KIM, Sang Kee YOON, Yong Suk KIM, Joung Hun KIM, Sung Jun LEE, Sung Joon PARK
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Publication number: 20230072487Abstract: A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator includes a board; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode, and disposed on the board, and a temperature compensation layer disposed on the resonant portion, wherein the temperature compensation layer includes a temperature compensation portion formed of a dielectric and a loss compensation portion formed of a material different from a material of the temperature compensation portion, and wherein each of the temperature compensation portion and the loss compensation portion includes a plurality of linear patterns, and the linear patterns of the temperature compensation portion and the linear patterns of the loss compensation portion are alternately disposed.Type: ApplicationFiled: February 22, 2022Publication date: March 9, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Won HAN, Hwa Sun LEE, Moon Chul LEE, Jeong Hoon RYOU, Tae Yoon KIM, Sang Kee YOON, Yong Suk KIM, Joung Hun KIM, Tae Kyung LEE, Jae Hyoung GIL
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Patent number: 11595015Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 ???Mg?170 ? may be satisfied, ?Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.Type: GrantFiled: August 13, 2020Date of Patent: February 28, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Tae Yoon Kim, Sang Kee Yoon, Chang Hyun Lim, Jong Woon Kim, Moon Chul Lee
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Patent number: 11476833Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.Type: GrantFiled: June 10, 2019Date of Patent: October 18, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Yoon Kim, Tae Kyung Lee, Sang Kee Yoon, Sung Jun Lee, Chang Hyun Lim, Nam Jung Lee, Tae Hun Lee, Moon Chul Lee
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Patent number: 11476826Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.Type: GrantFiled: November 14, 2017Date of Patent: October 18, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Dae Ho Kim, Yong Suk Kim, Seung Hun Han, Moon Chul Lee, Chang Hyun Lim, Sung Jun Lee, Sang Kee Yoon, Tae Yoon Kim, Sang Uk Son
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Patent number: 11437975Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.Type: GrantFiled: July 27, 2020Date of Patent: September 6, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Chang Hyun Lim, Tae Hun Lee, Yong Suk Kim, Moon Chul Lee, Sang Kee Yoon
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Patent number: 11431318Abstract: An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.Type: GrantFiled: April 23, 2019Date of Patent: August 30, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Chang Hyun Lim, Tae Yoon Kim, Sang Uk Son, Sang Kee Yoon
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Publication number: 20220149806Abstract: A bulk acoustic wave resonator includes: a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a protective layer disposed on an upper surface of the resonant portion. The protective layer includes: a first protective layer formed of a diamond thin film; and a second protective layer stacked on the first protective layer, and formed of a dielectric material.Type: ApplicationFiled: April 9, 2021Publication date: May 12, 2022Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Tae Kyung LEE, Sang Heon HAN, Sung Joon PARK, Sang Kee YOON, Sang Hyun YI, Jae Goon AUM
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Patent number: 11323088Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 ???Mg?170 ? may be satisfied, ?Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.Type: GrantFiled: August 10, 2020Date of Patent: May 3, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Tae Yoon Kim, Sang Kee Yoon, Chang Hyun Lim, Jong Woon Kim, Moon Chul Lee
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Patent number: 11323093Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.Type: GrantFiled: May 15, 2020Date of Patent: May 3, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun Lee, Chang Hyun Lim, Sang Kee Yoon
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Publication number: 20220085791Abstract: A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a cavity disposed between the substrate and the first electrode; a piezoelectric layer covering at least a portion of the first electrode; a second electrode covering at least a portion of the piezoelectric layer; an insertion layer disposed between the first electrode and the piezoelectric layer; and a lower frame disposed in the cavity. At least a portion of the lower frame overlaps the insertion layer.Type: ApplicationFiled: April 15, 2021Publication date: March 17, 2022Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Tae Yoon KIM, Won HAN, Sang Hyun YI, Jae Hyoung GIL, Sang Kee YOON, Moon Chul LEE
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Patent number: 11251767Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 ? or less.Type: GrantFiled: August 3, 2020Date of Patent: February 15, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Tae Yoon Kim, Dae Ho Kim, Chang Hyun Lim, Tae Hun Lee, Sang Kee Yoon, Jong Woon Kim, Won Han, Moon Chul Lee
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Publication number: 20220038077Abstract: A bulk-acoustic wave resonator includes a resonator having a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion and in which an insertion layer is disposed below the piezoelectric layer, wherein the insertion layer includes a SiO2 thin film injected with fluorine (F).Type: ApplicationFiled: November 10, 2020Publication date: February 3, 2022Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung LEE, Yong Suk KIM, Sang Kee YOON, Jin Suk SON, Ran Hee SHIN
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Publication number: 20210367582Abstract: A bulk-acoustic wave resonator includes: a substrate; and a resonator portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc). The bulk-acoustic wave resonator satisfies the following expression: leakage current densityĆscandium (Sc) content<20. The leakage current density is a leakage current density of the piezoelectric layer in ?A/cm2, and the scandium (Sc) content is a weight percentage (wt %) of scandium (Sc) in the piezoelectric layer.Type: ApplicationFiled: November 25, 2020Publication date: November 25, 2021Applicant: Samsung Electro-Mechanics Co., LtdInventors: Tae Kyung LEE, Ran Hee SHIN, Chang Hyun LIM, Tae Yoon KIM, Sang Kee YOON, Moon Chul LEE, Jae Goon AUM
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Publication number: 20210359662Abstract: A bulk-acoustic wave resonator includes a resonator, including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate; and an insertion layer disposed below the piezoelectric layer, and configured to partially elevate the piezoelectric layer and the second electrode, wherein the insertion layer may be formed of a material containing silicon (Si), oxygen (O), and nitrogen (N).Type: ApplicationFiled: November 20, 2020Publication date: November 18, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung LEE, Yong Suk KIM, Sang Kee YOON, Chang Hyun LIM, Tae Hun LEE, Jin Woo YI
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Patent number: 11171628Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.Type: GrantFiled: May 7, 2018Date of Patent: November 9, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Sung Sun Kim, Sang Kee Yoon, Chang Hyun Lim, Jin Suk Son, Ran Hee Shin, Je Hong Kyoung
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Patent number: 10958237Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.Type: GrantFiled: April 26, 2019Date of Patent: March 23, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Yoon Kim, Chang Hyun Lim, Sang Kee Yoon, Tae Kyung Lee, Moon Chul Lee, Tae Hun Lee
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Publication number: 20210075396Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.Type: ApplicationFiled: July 27, 2020Publication date: March 11, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Chang Hyun LIM, Tae Hun LEE, Yong Suk KIM, Moon Chul LEE, Sang Kee YOON
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Publication number: 20210075398Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.Type: ApplicationFiled: May 15, 2020Publication date: March 11, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Hun LEE, Chang Hyun LIM, Sang Kee YOON