Abstract: A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.

Abstract: A touch input device capable of detecting a pressure of a touch on a touch surface may be provided that includes: a display module; and a pressure sensor which is disposed at a position where a distance between the pressure sensor and a reference potential layer is changeable according to the touch on the touch surface. The distance is changeable according to a pressure magnitude of the touch. The pressure sensor outputs a signal including information on a capacitance which is changed according to the distance. The pressure sensor includes a plurality of electrodes to form a plurality of channels. The pressure magnitude of the touch is detected on the basis of a change amount of the capacitance detected in each of the channels. According to the embodiment of the present invention, it is possible to provide a pressure sensor for pressure detection, a touch input device including the same, and a pressure detection method using the same.

Abstract: A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

Abstract: An electronic apparatus and a method thereof are provided. The electronic apparatus includes a first camera including a first angle of view, a second camera including a second angle of view, a display, an input device for obtaining a set ratio, and a processor. If the ratio is within a specified range, the processor sets the first camera to a specified first frame rate, and the second camera to a second frame rate slower than the first frame rate, and displays a first image, which is obtained at the first frame rate using the first camera. If the ratio is within other specified range, the processor sets the second camera to a specified third frame rate, the first camera to a fourth frame rate slower than the third frame rate, and displays a second image, which is obtained at the third frame rate using the second camera.

Abstract: A touch pressure sensitivity correction method may be provided that includes: defining a plurality of reference points on a touch sensor panel; generating a reference data for a capacitance change amount sensed by applying the same pressure to the plurality of reference points; generating an interpolated data corresponding to a capacitance change amount for a random point present between the plurality of reference points; calculating, on the basis of the reference data and interpolated data, with respect to the reference points and the random point respectively, a correction factor for correcting a sensitivity of a touch input device to a target value; and correcting uniformly for the touch pressure sensitivity of the touch input device by applying the calculated correction factor to each corresponding point.

Abstract: A sensitivity compensation method of a touch input device sensing a touch pressure may be provided. The sensitivity compensation method includes: detecting a capacitance change amount by applying a pressure to a plurality of points defined on a touch sensor panel; generating a raw data for the capacitance change amount of the defined point; generating a decimal value data for each of the sets by dividing a data value within the set by a maximum value within the set; calculating an average value of each defined point; generating a representative value data by calculating a value corresponding to all the points of the touch sensor panel; calculating a balance factor on the basis of the representative value data; and compensating for a touch pressure sensitivity of the touch input device by using the balance factor.

Abstract: A thin-film ceramic capacitor includes a body, a plurality of dielectric layers and first and second electrode layers alternately disposed on a substrate in the body, first and second electrode pads disposed on an external surface of the body, and a plurality of vias disposed in the body, the plurality of dielectric layers and first and second electrode layers having inclined etched surfaces exposed to the plurality of vias, a first via, of the plurality of vias, being connected to the inclined surface of the first electrode layer, and a second via, of the plurality of vias, being connected to the inclined surface of the second electrode layer.

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 ???Mg?170 ? may be satisfied, ?Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Abstract: An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.

Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.

Abstract: A thin-film ceramic capacitor includes a body, a plurality of dielectric layers and first and second electrode layers alternately disposed on a substrate in the body, first and second electrode pads disposed on an external surface of the body, and a plurality of vias disposed in the body, the plurality of dielectric layers and first and second electrode layers having inclined etched surfaces exposed to the plurality of vias, a first via, of the plurality of vias, being connected to the inclined surface of the first electrode layer, and a second via, of the plurality of vias, being connected to the inclined surface of the second electrode layer.

Abstract: A bulk acoustic wave resonator includes a substrate on which a substrate protective layer is disposed, a membrane layer forming a cavity together with the substrate, and a resonant portion disposed on the membrane layer. The cavity is formed by removing a sacrificial layer using a mixed gas obtained by mixing a halide-based gas and an oxygen gas, and at least one of the membrane layer and the substrate protective layer has a thickness difference of 170 ? or less, after the cavity is formed.

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 ? or less.

Abstract: A bulk acoustic wave resonator includes: a support part disposed on a substrate; a layer disposed on the support part, wherein an air cavity is formed between the support part, the substrate and the layer; and a frame extending along the layer, within the air cavity, and spaced apart from the support part.

Abstract: A bulk acoustic wave resonator may include: an air cavity; an etching stop layer and an etching stop part, which define a lower boundary surface and a side boundary surface of the air cavity; and a resonating part formed on an approximately planar surface, which is formed by a upper boundary surface of the air cavity and a top surface of the etching stop part. A width of a top surface of the etching stop part may be greater than a width of a bottom surface of the etching stop part. A side surface of the etching stop part connecting the top surface of the etching stop part to the bottom surface of the etching stop part may be inclined.

Abstract: Disclosed herein is an angular velocity sensor, including: a mass body part; an internal frame supporting the mass body part; a first flexible part each connecting the mass body part to the internal frame; a second flexible part each connecting the mass body part to the internal frame; an external frame supporting the internal frame; a third flexible part connecting the internal frame and the external frame to each other; and a fourth flexible part connecting the internal frame and the external frame to each other, wherein the internal frame, the second flexible part, and the fourth flexible part have an oxide layer formed thereon.

Abstract: Disclosed herein is an inertial sensor, including: a structural part for an accelerator sensor disposed on one surface, centered on a common post; and a structural part for an angular velocity sensor disposed on the other surface, centered on the common post, wherein a piezoresistor of the structural part for the accelerator sensor and a piezoelectric material of the structural part for the angular velocity sensor are formed on different surfaces.