Patents by Inventor Sang Ki Jin
Sang Ki Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11962001Abstract: Disclosed is a positive electrode material for a lithium secondary battery. The positive electrode material includes a positive electrode active material formed of Li—[Mn—Ti]-M-O-based material including a transition metal (M) to enable reversible intercalation and deintercalation of lithium and molybdenum oxide. The positive electrode active material is coated with the molybdenum oxide to form a coating layer on a surface thereof.Type: GrantFiled: October 6, 2021Date of Patent: April 16, 2024Assignees: Hyundai Motor Company, Kia Corporation, Industry Academy Cooperation Foundation of Sejong UniversityInventors: Seung Min Oh, Jun Ki Rhee, Yoon Sung Lee, Ji Eun Lee, Sung Ho Ban, Ko Eun Kim, Woo Young Jin, Sang Mok Park, Sang Hun Lee, Seung Taek Myung, Hee Jae Kim, Min Young Shin
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Patent number: 10141480Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: GrantFiled: November 27, 2013Date of Patent: November 27, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee
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Patent number: 10128306Abstract: A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.Type: GrantFiled: January 9, 2017Date of Patent: November 13, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
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Publication number: 20170148845Abstract: A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.Type: ApplicationFiled: January 9, 2017Publication date: May 25, 2017Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE, Chung Hoon LEE
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Patent number: 9577157Abstract: A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.Type: GrantFiled: March 14, 2016Date of Patent: February 21, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
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Publication number: 20160197243Abstract: A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.Type: ApplicationFiled: March 14, 2016Publication date: July 7, 2016Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE, Chung Hoon LEE
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Patent number: 9343631Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.Type: GrantFiled: January 27, 2015Date of Patent: May 17, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
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Patent number: 9324919Abstract: A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.Type: GrantFiled: January 6, 2015Date of Patent: April 26, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee, Chung Hoon Lee
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Publication number: 20150207039Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.Type: ApplicationFiled: January 27, 2015Publication date: July 23, 2015Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE, Chung Hoon LEE
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Publication number: 20150194573Abstract: A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.Type: ApplicationFiled: January 6, 2015Publication date: July 9, 2015Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE, Chung Hoon LEE
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Patent number: 8963178Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: GrantFiled: February 9, 2011Date of Patent: February 24, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee
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Patent number: 8907360Abstract: An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: GrantFiled: November 2, 2010Date of Patent: December 9, 2014Assignee: Seoul Viosys Co., Ltd.Inventors: Chung Hoon Lee, Sum Geun Lee, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee
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Publication number: 20140087502Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: ApplicationFiled: November 27, 2013Publication date: March 27, 2014Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Sum Geun LEE, Sang Ki Jin, Jin Cheol Shin, Jong Kyu Kim, So Ra Lee
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Patent number: 8354680Abstract: The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other.Type: GrantFiled: September 15, 2010Date of Patent: January 15, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Dae Sung Kal, Won Cheol Seo, Jang Woo Lee, Jin Cheol Shin, Jong Kyu Kim, Sang Ki Jin, So Ra Lee
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Patent number: 8314440Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.Type: GrantFiled: March 28, 2011Date of Patent: November 20, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Min Chan Heo, Sang Ki Jin, Jong Kyu Kim, Jin Cheol Shin, So Ra Lee, Sum Geun Lee
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Publication number: 20120161176Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.Type: ApplicationFiled: March 28, 2011Publication date: June 28, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Min Chan HEO, Sang Ki JIN, Jong Kyu KIM, Jin Cheol SHIN, So Ra LEE, Sum Geun LEE
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Publication number: 20110127549Abstract: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: ApplicationFiled: February 9, 2011Publication date: June 2, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE
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Publication number: 20110114969Abstract: An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: ApplicationFiled: November 2, 2010Publication date: May 19, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chung Hoon LEE, Sum Geun LEE, Sang Ki JIN, Jin Cheol SHIN, Jong Kyu KIM, So Ra LEE
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Publication number: 20110062459Abstract: The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other.Type: ApplicationFiled: September 15, 2010Publication date: March 17, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Dae Sung KAL, Won Cheol SEO, Jang Woo LEE, Jin Cheol SHIN, Jong Kyu KIM, Sang Ki JIN, So Ra LEE