Patents by Inventor Sang Ki KO
Sang Ki KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11939698Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.Type: GrantFiled: November 3, 2020Date of Patent: March 26, 2024Assignee: SENIC INC.Inventors: Jong Hwi Park, Jung-Gyu Kim, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Yeon Sik Lee, Sang Ki Ko, Kap-Ryeol Ku
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Publication number: 20240083384Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.Type: ApplicationFiled: February 3, 2023Publication date: March 14, 2024Applicants: Hyundai Motor Company, Kia Corporation, Daechang Seat Co.,LTD-Dongtan, Hyundai Transys Inc.Inventors: Sang Soo LEE, Chan Ho JUNG, Mu Young KIM, Sang Hark LEE, Ho Suk JUNG, Deok Soo LIM, Sang Do PARK, In Sun BAEK, Sin Chan YANG, Chan Ki CHO, Myung Soo LEE, Jae Yong JANG, Jun Sik HWANG, Ho Sung KANG, Hae Dong KWAK, Hyun Tak KO
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Publication number: 20240076799Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.Type: ApplicationFiled: November 1, 2023Publication date: March 7, 2024Applicant: SENIC INC.Inventors: Jong Hwi PARK, Jung-Gyu KIM, Eun Su YANG, Byung Kyu JANG, Jung Woo CHOI, Yeon Sik LEE, Sang Ki KO, Kap-Ryeol KU
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Patent number: 11859305Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.Type: GrantFiled: February 16, 2023Date of Patent: January 2, 2024Assignee: SENIC Inc.Inventors: Jung Woo Choi, Jung-Gyu Kim, Kap-Ryeol Ku, Sang Ki Ko, Byung Kyu Jang
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Patent number: 11856678Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.Type: GrantFiled: October 23, 2020Date of Patent: December 26, 2023Assignee: SENIC INC.Inventors: Eun Su Yang, Jong Hwi Park, Jung Woo Choi, Byung Kyu Jang, Sang Ki Ko, Jongmin Shim, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11846038Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.Type: GrantFiled: July 26, 2019Date of Patent: December 19, 2023Assignee: SENIC Inc.Inventors: Jung Woo Choi, Jung-Gyu Kim, Kap-Ryeol Ku, Sang Ki Ko, Byung Kyu Jang
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Patent number: 11795572Abstract: A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.Type: GrantFiled: May 25, 2021Date of Patent: October 24, 2023Assignee: SENIC INC.Inventors: Byung Kyu Jang, Jong Hwi Park, Eun Su Yang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11741755Abstract: A method and apparatus for recognizing a sign language or a gesture by using a three-dimensional (3D) Euclidean distance matrix (EDM) are disclosed. The method includes a two-dimensional (2D) EDM generation step for generating a 2D EDM including information about distances between feature points of a body recognized in image information by a 2D EDM generator, a 3D EDM generation step for receiving the 2D EDM and generating a 3D EDM by using a first deep learning neural network trained with training data in which input data is a 2D EDM and correct answer data is a 3D EDM by a 3D EDM generator, and a recognition step for recognizing a sign language or a gesture based on the 3D EDM.Type: GrantFiled: July 30, 2020Date of Patent: August 29, 2023Assignee: Korea Electronics Technology InstituteInventors: Sang Ki Ko, Hye Dong Jung, Han Mu Park, Chang Jo Kim
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Patent number: 11708644Abstract: A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.Type: GrantFiled: June 30, 2020Date of Patent: July 25, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Myung-Ok Kyun, Jongmin Shim, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Publication number: 20230193506Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.Type: ApplicationFiled: February 16, 2023Publication date: June 22, 2023Inventors: Jung Woo CHOI, Jung-Gyu KIM, Kap-Ryeol KU, Sang Ki KO, Byung Kyu JANG
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Patent number: 11646209Abstract: A method of cleaning a wafer comprises: a scrubbing operation comprising treating a target wafer to be cleaned with a brush at a rotation rate of 200 rpm or less to prepare a brush cleaned wafer; and a cleaning operation comprising cleaning the brush cleaned wafer with a cleaning solution to prepare a cleaned bare wafer, wherein the cleaning operation comprises a first cleaning operation and a second cleaning operation sequentially.Type: GrantFiled: September 17, 2021Date of Patent: May 9, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Il Hwan Yoo, Kap-Ryeol Ku, Jung-Gyu Kim, Jung Woo Choi, Eun Su Yang, Byung Kyu Jang, Sang Ki Ko
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Publication number: 20230081168Abstract: A method for providing exercise load information of a target entity is provided. The method includes obtaining a target data set of the target entity for a target exercise session including a plurality of time units, wherein the target data set includes a sequence of kinematic information of the target entity for each of the plurality of time units; and determining, based on the target data set, an estimated load index reflecting a level of exercise load of the target entity for the target exercise session using an artificial neural network (ANN).Type: ApplicationFiled: November 8, 2022Publication date: March 16, 2023Applicant: FITOGETHER INC.Inventors: Jeong Bin KIM, Jae Chan LEE, Jong Hyun LEE, Hyun Sung KIM, Sang Ki KO, Jin Sung YOON
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Patent number: 11591711Abstract: A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.Type: GrantFiled: November 3, 2020Date of Patent: February 28, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11566344Abstract: A wafer having relaxation moduli different by 450 GPa or less, as determined by dynamic mechanical analysis, when loaded to 1 N and 18 N with a loading rate of 0.1 N/min at a temperature of 25° C.Type: GrantFiled: March 5, 2021Date of Patent: January 31, 2023Assignee: SENIC INC.Inventors: Jong Hwi Park, Jongmin Shim, Eun Su Yang, Yeon Sik Lee, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11482134Abstract: Disclosed is a method of providing a sign language video reflecting an appearance of a conversation partner. The method includes recognizing a speech language sentence from speech information, and recognizing an appearance image and a background image from video information. The method further comprises acquiring multiple pieces of word-joint information corresponding to the speech language sentence from joint information database, sequentially inputting the word-joint information to a deep learning neural network to generate sentence-joint information, generating a motion model on the basis of the sentence-joint information, and generating a sign language video in which the background image and the appearance image are synthesized with the motion model. The method provides a natural communication environment between a sign language user and a speech language user.Type: GrantFiled: August 8, 2019Date of Patent: October 25, 2022Assignee: Korea Electronics Technology InstituteInventors: Hye Dong Jung, Sang Ki Ko, Han Mu Park, Chang Jo Kim
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Patent number: 11474012Abstract: A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2).Type: GrantFiled: June 29, 2020Date of Patent: October 18, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Jongmin Shim, Eun Su Yang, Yeon Sik Lee, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11466383Abstract: A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D?r?37D??[Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a lengtType: GrantFiled: June 30, 2020Date of Patent: October 11, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Myung-Ok Kyun, Jongmin Shim, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11447889Abstract: An adhesive layer of seed crystal includes a graphitized adhesive layer, wherein the graphitized adhesive layer is prepared by heat-treating a pre-carbonized adhesive layer, and wherein the adhesive layer has Vr value of 28%/mm3 or more, and the Vr value is represented by Equation 1 below: Vr ? = { Sq ( V ? 1 - V ? 2 ) } × 1 ? 0 3 [ Equation ? ? 1 ] where Sg (%) is represented by Equation 2 below, V1 is a volume (mm3) of the pre-carbonized adhesive layer, and V2 is a volume (mm3) of the graphitized adhesive layer, Sg ? = { 1 - ( A ? 2 A ? 1 ) } × 1 ? 0 ? 0 ? % [ Equation ? ? 2 ] where A1 is an area (mm2) of the pre-carbonized adhesive layer, and A2 is an area (mm2) of the graphitized adhesive layer.Type: GrantFiled: June 29, 2020Date of Patent: September 20, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Jongmin Shim, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11359306Abstract: A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm3.Type: GrantFiled: May 22, 2020Date of Patent: June 14, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Myung-Ok Kyun, Jongmin Shim, Eun Su Yang, Byung Kyu Jang, Jung Woo Choi, Sang Ki Ko, Kap-Ryeol Ku, Jung-Gyu Kim
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Patent number: 11339497Abstract: A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.Type: GrantFiled: August 23, 2021Date of Patent: May 24, 2022Assignee: SENIC INC.Inventors: Jong Hwi Park, Kap-Ryeol Ku, Jung-Gyu Kim, Jung Woo Choi, Sang Ki Ko, Byung Kyu Jang, Eun Su Yang, Jung Doo Seo