Patents by Inventor Sang Kug LYM

Sang Kug LYM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • REFERENCE VOLTAGE GENERATOR
    Publication number: 20130293215
    Abstract: A reference voltage generator generates a reference voltage having a stable voltage level insensitive to a temperature variation. A reference voltage generator includes a current generating unit configured to generate a reference current proportional to temperature increase, a voltage adjusting unit configured to adjust a reference voltage corresponding to a current level of the reference current, and a start-up driving unit configured to drive and amplify the reference voltage while the voltage adjusting unit operates.
    Type: Application
    Filed: July 17, 2012
    Publication date: November 7, 2013
    Applicant: SK hynix Inc.
    Inventors: Sang Kug LYM, Yoon Jae Shin
  • NONVOLATILE SEMICONDUCTOR DEVICE AND METHOD FOR TESTING THE SAME
    Publication number: 20130294175
    Abstract: A nonvolatile semiconductor device and a method for testing the same are provided. The nonvolatile semiconductor device includes a current generating unit configured to generate a set write current depending on a step pulse that is generated based on a reference current and output the set write current to a memory cell, and a current measuring unit configured to measure a step duration of the step pulse and output a measured result outside of a chip during an activation period of a test enable signal.
    Type: Application
    Filed: July 17, 2012
    Publication date: November 7, 2013
    Applicant: SK Hynix Inc.
    Inventors: Sang Kug LYM, Yoon Jae SHIN
  • Current control apparatus and phase change memory having the same
    Patent number: 8526226
    Abstract: A current control apparatus of a phase change memory includes a temperature sensing block having an output voltage level which varies depending on temperature of an internal circuit and a write driver configured to control an amount of program current provided to a memory cell in response to the output voltage level of the temperature sensing block.
    Type: Grant
    Filed: December 31, 2010
    Date of Patent: September 3, 2013
    Assignee: SK Hynix Inc.
    Inventors: Sang Kug Lym, Yoon Jae Shin
  • CURRENT CONTROL APPARATUS AND PHASE CHANGE MEMORY HAVING THE SAME
    Publication number: 20120106243
    Abstract: A current control apparatus of a phase change memory includes a temperature sensing block having an output voltage level which varies depending on temperature of an internal circuit and a write driver configured to control an amount of program current provided to a memory cell in response to the output voltage level of the temperature sensing block.
    Type: Application
    Filed: December 31, 2010
    Publication date: May 3, 2012
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Sang Kug LYM, Yoon Jae SHIN