Abstract: The present disclosure relates to a pressure swing adsorption apparatus for hydrogen purification from decomposed ammonia gas and a hydrogen purification method using the same, and more particularly, the pressure swing adsorption apparatus of the present disclosure includes a plurality of adsorption towers including a pretreatment unit and a hydrogen purification unit wherein the adsorption towers of the pretreatment unit and the hydrogen purification unit are packed with different adsorbents, thereby achieving high purity hydrogen purification from mixed hydrogen gas produced after ammonia decomposition, making it easy to replace the adsorbent for ammonia removal, minimizing the likelihood that the lifetime of the adsorbent in the hydrogen purification unit is drastically reduced by a very small amount of ammonia, and actively responding to a large change in ammonia concentration in the raw material.

Abstract: A display device includes an external memory device which stores a first integrated circuit (“IC”) driving information, an internal memory device which stores a second IC driving information generated by copying the first IC driving information, a buffer which receives the second IC driving information and detects an electrostatic discharge current, an error correction code calculator which determines a first error correction code of the first IC driving information and a second error correction code of the second IC driving information when the electrostatic discharge current is detected, and an error correction code comparator which compares the first error correction code and the second error correction code. The internal memory device selectively updates the second IC driving information to the first IC driving information based on a result of a comparison of the first error correction code and the second error correction code.

Abstract: A display device includes: a first memory storing compensation data and a display driver integrated chip including a compensator converting the input image data into output image data based on the compensation data. The display driver integrated chip includes: a second memory receiving the compensation data from the first memory when the display device is power-on; a third memory included in the compensator, the third memory storing the compensation data received from the second memory; and an error detector detecting an error in the compensation data stored in the third memory by comparing the compensation data stored in the first memory with the compensation data stored in the third memory.

Abstract: A display device includes an oscillator which generates a reference clock signal having a frequency corresponding to frequency information provided from an external device, a register which stores a signal parameter for the reference clock signal, and the signal parameter indicates the number of pulses of the reference clock signal included in one horizontal time, a data driver which applies data signals to data lines connected to pixels based on the one horizontal time, and a controller which changes the signal parameter based on a change in the frequency of the reference clock signal in a way such that the one horizontal time is maintained substantially constant.

Abstract: A three-dimensional (3D) semiconductor memory device including first cell stacks arranged in first and second directions; second cell stacks disposed on the first cell stacks and arranged in the first and second directions; first conductive lines extending in the first direction and provided between a substrate and the first cell stacks; common conductive lines extending in the second direction and provided between the first and second cell stacks; etch stop patterns extending in the second direction and provided between the common conductive lines and top surfaces of the first cell stacks; second conductive lines extending in the first direction and provided on the second cell stacks; and a capping pattern covering a sidewall of the common conductive lines and a sidewall of the etch stop patterns, wherein each of the common conductive lines has a second thickness greater than a first thickness of each of the first conductive lines.

Abstract: A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

Abstract: A display device includes an external memory device which stores a first integrated circuit (“IC”) driving information, an internal memory device which stores a second IC driving information generated by copying the first IC driving information, a buffer which receives the second IC driving information and detects an electrostatic discharge current, an error correction code calculator which determines a first error correction code of the first IC driving information and a second error correction code of the second IC driving information when the electrostatic discharge current is detected, and an error correction code comparator which compares the first error correction code and the second error correction code. The internal memory device selectively updates the second IC driving information to the first IC driving information based on a result of a comparison of the first error correction code and the second error correction code.

Abstract: A display device includes: a first memory storing compensation data and a display driver integrated chip including a compensator converting the input image data into output image data based on the compensation data. The display driver integrated chip includes: a second memory receiving the compensation data from the first memory when the display device is power-on; a third memory included in the compensator, the third memory storing the compensation data received from the second memory; and an error detector detecting an error in the compensation data stored in the third memory by comparing the compensation data stored in the first memory with the compensation data stored in the third memory.

Abstract: A display apparatus includes: a first power line, a second power line, an IC region, a printed circuit board region, and a display panel. The IC region includes a logic block receiving a first power voltage from the first power line, an analog block receiving a second power voltage from the second power line, a first IC ground connected to the logic block, and a second IC ground connected to the analog block. The printed circuit board region includes a printed circuit board ground connected to the first IC ground and the second IC ground, a transient voltage suppressor diode including a first electrode connected to the second power line and a second electrode connected to the printed circuit board ground, and a board switch performing a switching operation between the printed circuit board ground and the first IC ground. The display panel is connected to the IC region.

Abstract: A driving controller includes an oscillator and a signal generator. The oscillator is configured to generate an oscillation signal based on an input current. The signal generator is configured to generate a gate driving signal and a data driving signal based on the oscillation signal. The oscillator is configured to maintain a frequency of one horizontal period of the oscillation signal to be constant when an oscillation fundamental frequency is shifted. When the oscillation fundamental frequency is f0 and a fundamental constant is N0, the frequency of one horizontal period is f0/N0.

Abstract: A driving controller includes an oscillator and a signal generator. The oscillator is configured to generate an oscillation signal based on an input current. The signal generator is configured to generate a gate driving signal and a data driving signal based on the oscillation signal. The oscillator is configured to maintain a frequency of one horizontal period of the oscillation signal to be constant when an oscillation fundamental frequency is shifted. When the oscillation fundamental frequency is f0 and a fundamental constant is N0, the frequency of one horizontal period is f0/N0.

Abstract: A display device includes an oscillator which generates a reference clock signal having a frequency corresponding to frequency information provided from an external device, a register which stores a signal parameter for the reference clock signal, and the signal parameter indicates the number of pulses of the reference clock signal included in one horizontal time, a data driver which applies data signals to data lines connected to pixels based on the one horizontal time, and a controller which changes the signal parameter based on a change in the frequency of the reference clock signal in a way such that the one horizontal time is maintained substantially constant.

Abstract: A semiconductor memory device in which performance is improved by reducing a wiring resistance is provided. The semiconductor memory device comprising an inter-wiring insulation film on a substrate, a first wiring pattern extending in a first direction, in the inter-wiring insulation film, a barrier insulation film that is on an upper surface of the inter-wiring insulation film, a barrier conductive pattern electrically connected to the first wiring pattern, in the barrier insulation film, a memory cell electrically connected to the barrier conductive pattern and including a selection pattern and a variable resistor pattern, and a second wiring pattern extending in a second direction intersecting the first direction, on the memory cell, wherein a width of the barrier conductive pattern in the second direction is different from a width in the second direction of a portion of the memory cell that is adjacent to the barrier conductive pattern.

Abstract: A three-dimensional (3D) semiconductor memory device including first cell stacks arranged in first and second directions; second cell stacks disposed on the first cell stacks and arranged in the first and second directions; first conductive lines extending in the first direction and provided between a substrate and the first cell stacks; common conductive lines extending in the second direction and provided between the first and second cell stacks; etch stop patterns extending in the second direction and provided between the common conductive lines and top surfaces of the first cell stacks; second conductive lines extending in the first direction and provided on the second cell stacks; and a capping pattern covering a sidewall of the common conductive lines and a sidewall of the etch stop patterns, wherein each of the common conductive lines has a second thickness greater than a first thickness of each of the first conductive lines.

Abstract: A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

Abstract: A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

Abstract: An embodiment of a display device includes first, second, and third pixels including first, second, and third transistors, a first light-emitting stage to apply a first light-emitting signal including a first pulse at a turn-off level to a gate electrode of the first transistor, a second light-emitting stage to apply a second light-emitting signal including a second pulse at a turn-off level to a gate electrode of the second transistor, and a third light-emitting stage to apply a third light-emitting signal including a third pulse at a turn-off level to a gate electrode of the third transistor, wherein an interval between generation times of the first and second pulses is the same as an interval between generation times of the second and third pulses, and an interval between extinction times of the first and second pulses is different from an interval between extinction times of the second and third pulses.

Abstract: A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

Abstract: An embodiment of a display device includes first, second, and third pixels including first, second, and third transistors, a first light-emitting stage to apply a first light-emitting signal including a first pulse at a turn-off level to a gate electrode of the first transistor, a second light-emitting stage to apply a second light-emitting signal including a second pulse at a turn-off level to a gate electrode of the second transistor, and a third light-emitting stage to apply a third light-emitting signal including a third pulse at a turn-off level to a gate electrode of the third transistor, wherein an interval between generation times of the first and second pulses is the same as an interval between generation times of the second and third pulses, and an interval between extinction times of the first and second pulses is different from an interval between extinction times of the second and third pulses.

Abstract: An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.