Abstract: A combustion apparatus includes a cylindrical combustion chamber surrounded by an inner wall. A cooling chamber comprises an intermediate wall spaced from the inner wall. Cooling water flows in and out lower and upper sides of the intermediate wall, to cool the inner wall by the cooling water that flows into a space formed between the inner and intermediate walls of the cooling chamber. A lateral combustion air supply chamber comprises an outer wall spaced from an outer side of the intermediate wall. Combustion air is supplied at an upper side of the outer wall to thereby make the air in a tangential direction with respect to the cylindrical outer wall turn and fall in a space formed between the intermediate wall and the outer wall, so that the combustion air is supplied to the combustion chamber via an opened lower portion of the lateral combustion air supply chamber.

Abstract: A system and method for a tele-education service system based on video conferencing are provided. The tele-education service system includes a host terminal to manage a tele-education service system; at least one participating terminal to receive the tele-education service; and a media relay to acquire video images from the host terminal and the at least one participating terminal, to combine the acquired video images differently according to user information of the host terminal and the at least one participating terminal and the progress stages of video conferencing and to provide the differently combined video images to the host terminal and the at least one participating terminal, respectively.

Abstract: Disclosed is a capacitor and method for forming a capacitor in a semiconductor. The method includes the steps of: (a) forming a lower electrode pattern on a silicon semiconductor substrate; (b) etching a portion of the lower electrode pattern to a predetermined depth to form a step in the lower electrode pattern; (c) forming a dielectric layer and a upper electrode layer on an entire surface of the substrate including the lower electrode pattern; and (e) patterning the upper electrode layer and the dielectric layer to form a upper electrode pattern and a dielectric pattern.

Abstract: There is provided a method of processing Internet Protocol (IP) handoff of a mobile node in a network system, in which the IP handoff is processed distinguishing a signal packet path for the IP handoff from a data packet path the method including receiving a registration request message when the mobile node moves to an arbitrary mobile agent, the message received from the mobile node via the mobile agent to which the mobile node moves; transmitting the received registration request message to a mobile agent where the mobile node is previously located, without change, according to whether an entry with respect to the mobile node exists in preset visitor list; and transmitting a registration reply message with respect to the registration request message to the mobile agent without change.

Abstract: An example disclosed semiconductor device includes a semiconductor substrate, a lower interlayer insulating layer formed on the substrate, a lower wire formed on the lower interlayer insulating layer, and an upper interlayer insulating layer which is formed on the lower interlayer insulating layer and has a via hole to expose the lower wire. The lower wire includes a metal layer pattern and a conductive layer pattern, and the metal layer pattern has a protruding portion and the conductive layer pattern is formed on the upper part of the protruding portion of the metal layer pattern and has a hole to expose the protruding portion.

Abstract: An IP handoff process method and Internet service system are provided. In the IP handoff process method, a registration request message for multiple IP handoff is received from a mobile station having a plurality of Internet protocol (IP) addresses through a currently-moving mobile agent of the mobile station. Then, the registration request for multiple IP handoff is processed according to information included in the received registration request message. A reply message thereof is transmitted according to the result of updating the information to the mobile station through the currently-moving mobile agent. Then, the received registration request message is transmitted to a previous mobile agent of the mobile station before moving and a home agent of the mobile station as it is.

Abstract: Provided are a mobile network system capable of processing a high-speed handoff by dividing into a data packet path between mobile nodes and a handoff packet path of the mobile node, and a method for processing IP handoff thereof. The system includes a MAP broadcasting a handoff registration request and reply between a foreign agent and a home agent, and an additional handoff signal path between the MAP and a mobile agent operating as a foreign agent and a home agent by means of a HAAP and VPN technology to be physically distinguishable from a data path. Therefore, limitation in a head of line can be resolved and the IP handoff can be promptly provided.

Abstract: Provided is a capacitor for a semiconductor device. The capacitor comprises a bottom electrode, a dielectric pattern, and a top electrode. The bottom electrode has an uneven surface. The dielectric pattern is on the bottom electrode, and the top electrode is on the dielectric pattern. The bottom electrode has a first height in edge and center regions thereof, and a protrusion between the edge region and the center region of the bottom electrode having a second height greater than the first height.

Abstract: A portable laptop stand comprising a generally rectangular flat board having a longitudinal axis perpendicular to a width of the board; said board having a distal end; said board having a proximal end; said board having a first portion, a second portion pivotably coupled to the first portion, and a main body pivotably coupled to the second portion; wherein the first portion has a longitudinal axis that is perpendicular to the longitudinal axis of the board; wherein the second portion has a longitudinal axis that is perpendicular to the longitudinal axis of the board; wherein said first portion is capable of folding back towards the main body and contact the main body. The board having a first attachment means disposed on the first portion; and a second attachment means disposed on the main body to detachably attach to said first attachment means.

Abstract: An example disclosed semiconductor device includes a semiconductor substrate, a lower interlayer insulating layer formed on the substrate, a lower wire formed on the lower interlayer insulating layer, and an upper interlayer insulating layer which is formed on the lower interlayer insulating layer and has a via hole to expose the lower wire. The lower wire includes a metal layer pattern and a conductive layer pattern, and the metal layer pattern has a protruding portion and the conductive layer pattern is formed on the upper part of the protruding portion of the metal layer pattern and has a hole to expose the protruding portion.

Abstract: A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different temperatures from one another. The wafer is etched during cooling.

Abstract: An example disclosed semiconductor device includes a semiconductor substrate, a lower interlayer insulating layer formed on the substrate, a lower wire formed on the lower interlayer insulating layer, and an upper interlayer insulating layer which is formed on the lower interlayer insulating layer and has a via hole to expose the lower wire. The lower wire includes a metal layer pattern and a conductive layer pattern, and the metal layer pattern has a protruding portion and the conductive layer pattern is formed on the upper part of the protruding portion of the metal layer pattern and has a hole to expose the protruding portion.

Abstract: A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different temperatures from one another. The wafer is etched during cooling.

Abstract: Provided is a metal interconnection structure of a semiconductor device, having: a lower metal layer disposed on an insulating layer formed on a semiconductor device; a contact plug disposed on the lower metal layer; a supporting layer disposed to surround the contact plug; an upper metal layer disposed on the contact plug and the supporting layer; and an air layer interposed between the lower and upper metal layers to insulate the lower metal layer from the upper metal layer.

Abstract: A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different temperatures from one another. The wafer is etched during cooling.

Abstract: An example disclosed semiconductor device includes a semiconductor substrate, a lower interlayer insulating layer formed on the substrate, a lower wire formed on the lower interlayer insulating layer, and an upper interlayer insulating layer which is formed on the lower interlayer insulating layer and has a via hole to expose the lower wire. The lower wire includes a metal layer pattern and a conductive layer pattern, and the metal layer pattern has a protruding portion and the conductive layer pattern is formed on the upper part of the protruding portion of the metal layer pattern and has a hole to expose the protruding portion.

Abstract: A battery includes a can filled with an electrode assembly and an electrolyte, a cap assembly mounted on an upper end of the can, a gasket disposed between the can and the cap assembly to prevent the electrolyte from leaking, and a seal reinforcing member disposed between the gasket and the cap assembly. The seal reinforcing member is made of a material which forms a tight seal with a material forming the gasket.