Abstract: In some embodiments, a memory system includes a memory device and a host configured to transmit, to the memory device, a command and address (C/A) signal and a clock signal, and to transmit or receive data signals to or from the memory device. Each command that is configured to access the memory device is associated with an access timing parameter. The memory device includes an access parameter timer configured to measure an actual timing value of the access timing parameter, a spec register configured to provide a spec timing value defining an effective timing of the access timing parameter, a comparison circuit configured to compare the actual timing value and the spec timing value, and a mode register configured to store an access timing violation flag that is read by the host when the actual timing value deviates from the spec timing value by exceeding a predetermined range.

Abstract: There are provided a wafer holder cleaning apparatus and a film deposition system including the same, the wafer holder cleaning apparatus including a housing part including an entrance into and out of which a wafer holder is carried, a door part selectively opening and closing the entrance, a support part provided within the housing part and having the wafer holder disposed thereon, the wafer holder being carried into the housing part through the entrance, and a cleaning part cleaning a surface of the wafer holder.

Abstract: There is provided a slit valve unit including: a body disposed on an outer side of a process chamber and having an entrance connected to an opening of the process chamber; a slit valve provided in an internal space of the body and selectively opening and closing the entrance; a plurality of packing members provided along the circumference of the entrance on an inner side of the body and tightly attached to the slit valve when the slit valve shields the entrance; and a connection pipe having one end exposed between the plurality of packing members on the inner side of the body so as to be connected to an airtight space formed among the plurality of packing members, the body, and the slit valve, and the other end exposed to the outer side of the body, the connection pipe penetrating the body.

Abstract: Methods of forming through-silicon vias by using laser ablation. A method includes, laser drilling to form a plurality of grooves by irradiating a laser beam onto an upper surface of a silicon wafer, and grinding a lower surface of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the lower surface of the silicon wafer.

Abstract: There is provided a vapor phase deposition apparatus including: a reaction chamber having a susceptor with a wafer mounted thereon and depositing and growing an epitaxial thin film on the wafer; a housing having the reaction chamber disposed therein and having a window opened and closed to allow the wafer to be loaded into or unloaded from the wafer reaction chamber; and an exhaust unit discharging gas from within the housing to the outside to adjust internal pressure of the housing.

Abstract: There are provided a wafer holder cleaning apparatus and a film deposition system including the same, the wafer holder cleaning apparatus including a housing part including an entrance into and out of which a wafer holder is carried, a door part selectively opening and closing the entrance, a support part provided within the housing part and having the wafer holder disposed thereon, the wafer holder being carried into the housing part through the entrance, and a cleaning part cleaning a surface of the wafer holder.