Abstract: Scanning Electron Microscope (SEM) analysis is used to detect undesired conductive material on the gate sidewall spacers. The undesired conductive material is then etched from the sidewall spacers if the undesired material is detected by the SEM analysis. More specifically, integrated circuit field effect transistors may be manufactured by forming on an integrated circuit substrate, a plurality of field effect transistors, each comprising spaced apart source and drain regions, a gate therebetween including a sidewall, a sidewall spacer on the sidewall and contacts comprising conductive material on the source and drain regions. At least one of the field effect transistors may include undesired conductive material on the sidewall spacer thereof. The integrated circuit field effect transistors are tested by performing SEM analysis on the integrated circuit substrate to detect the undesired conductive material on the sidewall spacer.

Abstract: A method and an apparatus for examining wafers includes a wafer cassette having a capacity for holding a plurality of wafers located on each of first and second locaters. The wafer cassettes are fixedly held on the first and second locaters during the wafer examination. A first indicator shows that the wafer cassettes are fixedly held on the first and second locaters. A robot arm sequentially carries each of the wafers between the first locator, an aligner, a scanning chamber and the second locater to examine the wafers. The wafer cassettes are released when the examination is complete, and a second indicator shows that the examination is complete.

Abstract: An apparatus for depositing particles onto a wafer comprises a particle generator; particle size controller connected to an output terminal of the particle generator, a first transmitting tube connected to an output of the particle size controller; a second and a third transmitter connected to an output terminal of the first transmitting tube; a first counter connected to an output terminal of the second transmitting tube; a particle depositor connected to an output terminal of the third transmitter; a second counter connected to the particle depositor; and a power supplier connected to the particle depositor. The apparatus and a method for depositing the particles onto the wafer provide a wafer on which particles of known size and kind are deposited. Also, the particles of a different kind and size are deposited on the same wafer.

Abstract: An apparatus for depositing particles onto a wafer comprises a particle generating means; particle size controlling means connected to an output terminal of the particle generating means; a first transmitting tube connected to an output of the particle size controlling means; second and a third transmitting means connected to an output terminal of the first transmitting tube; first counting means connected to an output terminal of the second transmitting tube; particle depositing means connected to an output terminal of the third transmitting means; second counting means connected to the particle depositing means; and a power supplier connected to the particle depositing means. The apparatus and a method for depositing the particles onto the wafer provide a wafer on which particles of known size and kind are deposited. Also, the particles of a different kind and size are deposited on the same wafer.