Patents by Inventor Sang Kyun Shim

Sang Kyun Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer
    Patent number: 9012944
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: April 21, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Light emitting device and lighting apparatus having crystal control layer
    Patent number: 8937320
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an active layer disposed on the n-type semiconductor layer in the first area; an electron barrier layer disposed on the active layer in the first area; and a p-type semiconductor layer disposed on the electron barrier layer in the first area.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: January 20, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM
    Publication number: 20130334550
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Application
    Filed: August 16, 2013
    Publication date: December 19, 2013
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Ho Sang YOON, Sang Kyun SHIM
  • Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer
    Patent number: 8563999
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: October 22, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Light emitting device, light emitting device package and lighting system
    Patent number: 8399948
    Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first conductive type semiconductor layer; an active layer including a barrier layer and a well layer alternately disposed on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer. At least one well layer includes an indium cluster having a density of 1E11/cm2 or more.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: March 19, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Light emitting device and manufacturing method thereof
    Patent number: 8314436
    Abstract: Provided are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer with a lower surface being uneven in height, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: November 20, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • LIGHT EMITTING DEVICE AND LIGHTING APPARATUS
    Publication number: 20120223347
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an active layer disposed on the n-type semiconductor layer in the first area; an electron barrier layer disposed on the active layer in the first area; and a p-type semiconductor layer disposed on the electron barrier layer in the first area.
    Type: Application
    Filed: February 6, 2012
    Publication date: September 6, 2012
    Inventors: Ho Sang YOON, Sang Kyun SHIM
  • Light emitting device and method of manufacturing the same
    Patent number: 8110849
    Abstract: A light emitting device is provided. The light emitting device comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an InNO layer. The active layer is disposed on the first conductive semiconductor layer. The second conductive semiconductor layer is disposed on the active layer. The InNO layer is disposed on the second conductive semiconductor layer.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: February 7, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • Semiconductor light emitting device
    Patent number: 8110850
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a layer of the plurality of compound semiconductor layers comprising a roughness comprising a sapphire material.
    Type: Grant
    Filed: December 24, 2009
    Date of Patent: February 7, 2012
    Assignee: LG Innotek Co., Ltd
    Inventor: Sang Kyun Shim
  • Nitride semiconductor light emitting device and method for fabricating the same
    Patent number: 8093625
    Abstract: Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer on the active layer.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: January 10, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM
    Publication number: 20110175120
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Application
    Filed: November 18, 2010
    Publication date: July 21, 2011
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 7977695
    Abstract: Disclosed is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a first concave-convex pattern, a second concave-convex pattern on at least one pattern of the first concave-convex pattern, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: July 12, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sang Kyun Shim, Ho Sang Yoon
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM
    Publication number: 20110133155
    Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first conductive type semiconductor layer; an active layer including a barrier layer and a well layer alternately disposed on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer. At least one well layer includes an indium cluster having a density of 1E11/cm2 or more.
    Type: Application
    Filed: November 12, 2010
    Publication date: June 9, 2011
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 7875874
    Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: January 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100187495
    Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers.
    Type: Application
    Filed: July 25, 2008
    Publication date: July 29, 2010
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20100163903
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a layer of the plurality of compound semiconductor layers comprising a roughness comprising a sapphire material.
    Type: Application
    Filed: December 24, 2009
    Publication date: July 1, 2010
    Inventor: Sang Kyun SHIM
  • LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100052009
    Abstract: A light emitting device is provided. The light emitting device comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an InNO layer. The active layer is disposed on the first conductive semiconductor layer. The second conductive semiconductor layer is disposed on the active layer. The InNO layer is disposed on the second conductive semiconductor layer.
    Type: Application
    Filed: August 31, 2009
    Publication date: March 4, 2010
    Inventor: Sang Kyun SHIM
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090078954
    Abstract: Disclosed is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a first concave-convex pattern, a second concave-convex pattern on at least one pattern of the first concave-convex pattern, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
    Type: Application
    Filed: September 19, 2008
    Publication date: March 26, 2009
    Inventors: Sang Kyun Shim, Ho Sang Yoon
  • LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20080290346
    Abstract: Provided are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer with a lower surface being uneven in height, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
    Type: Application
    Filed: May 20, 2008
    Publication date: November 27, 2008
    Inventor: Sang Kyun SHIM