Abstract: A method for fabricating a semiconductor device, including the steps of: coating an anti-reflective film over a lower layer to be patterned; coating a first photoresist film over the anti-reflective film and subjecting the first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern having a dimension slightly larger than a desired pattern dimension; etching an exposed portion of the anti-reflective film, thereby forming an anti-reflective film pattern; removing the first photoresist film pattern and coating a second photoresist film over the entire exposed surface of the resulting structure obtained after the removal of the first photoresist film pattern; subjecting the second photoresist film to a light exposure process using the mask and a development, thereby forming a second photoresist film pattern having the desired pattern dimension; and etching an exposed portion of the anti-reflective film pattern and then etching the low

Abstract: Method for the preparation of pattern overlay accuracy-measuring mark consisting of an inner box and an outer box. The method is characterized in that a groove is formed along the inside boundary line of the outer box, so as to enlarge step thereat. The enlarged step prevents inaccuracy in defining the boundary line, of the outer box whose inaccuracy is mainly attributed to smooth flow which occurs at the boundary line as a metal layer is coated over the outer box. Accordingly, the method can easily define the boundary line and thus, definitely measure the overlay accuracy.

Abstract: A method for detecting wafer defects, comprising the steps of: forming dummy dies useful as an alignment mark at edge portions of a flat wafer, the edge portions having no pattern die; loading the wafer in a defect detecting apparatus; arranging the edge portions of the dummy dies; inspecting the wafer for defects to give data for the defects; and carrying out subsequent processes, according to which the detected defects are utilized to inspect for process defects at subsequent process steps, which makes it easy to monitor organic relations between the wafer defects and the process defects and between the process defects themselves.

Abstract: A prefabricated modified illumination apparatus for forming fine patterns in a semiconductor device having a copper plate with a transmission hole in the center; a plurality of first blades for intercepting the light which transmits the transmission hole, the blades being controlled by an external power-driven machine so that first blades vary the area of the transmission hole second blades of a cross-bar type, at least one of which intercepts the light transmitting the transmission hole and is controlled by an external power-driven machine, to vary the area of the transmission hole, and third blades of a length-bar type, at least one of which intercepts the light transmitting the transmission hole and is controlled by an external power-driven machine, vary the area of the transmission hole, wherein the second blade is superimposed on the third blade in the area of the transmission hole.

Abstract: A method for the preparation of a pattern overlay accuracy-measuring mark, consisting of an inner box and an outer box. The method creates a groove along the inside boundary line of the outer box so as to form an enlarged step. The enlarged step prevents inaccuracy in defining the boundary line of the outer box whose inaccuracy is mainly attributed to reflow which occurs at the boundary line as a metal layer is later coated over the outer box. The method can easily define the boundary line and thus more define the overlay accuracy.

Abstract: A dummy mask used in the fabrication of semiconductor devices, capable of forming an ultra-fine pattern by diffracting incident light while controlling or cutting off light components vertically incident on a mask formed with a pattern, thereby increasing the depth of focus and improving the resolution. The dummy mask includes a transparent substrate provided at its upper surface with a diffracting pattern for primarily diffracting light from a light source incident on the dummy mask and at its lower surface with a controlling pattern for removing vertically incident light not diffracted by the diffraction patterns.

Abstract: The photomask of the present invention uses chrome patterns formed on a quartz substrate in such a way that the ratio of the line width of chrome pattern to the width of the space between the chrome patterns is 3:5, a phase shift pattern formed at the center of the space between the chrome patterns to have smaller width than the line width of chrome pattern, and auxiliary patterns formed on both sides of the phase shift pattern to have same width together with the phase shift pattern as the line width of each of the chrome patterns.

Abstract: A method and apparatus are disclosed for coating uniformly thick photoresist upon the surface of a semiconductor having an uneven topography.The uniform thickness of photoresist on a wafer provided with a variety of patterns can be achieved by use of the apparatus of the present invention. In this regard, a wafer of which the upper surface is primarily coated with photoresist is mounted in the wafer cassette 6 so that the upper surface faces downward and the heater 7 raises the temperature of the chamber 4 to an extent that the primarily coated photoresist may flow while the pressure is kept twice or three times larger than atmosphere by the pressure control terminal 5 under a gaseous atmosphere. Under the influence of gravity, the photoresist is distributed and flows from the surface of the wafer to the patterns since the wafer is upset. The resultant photoresist has a surface which is reshaped along with the topology thereunder and thus, has almost uniform thickness everywhere.

Abstract: A photoresist pattern in a semiconductor device which can form a ultra micro pattern beyond the limitation of the resolution power obtainable by an ordinary stepper. A first, second, third and fourth exposure processes using a first, second, third and fourth photo masks.

Abstract: A photo mask used to form a positive photoresist film pattern at a region defined adjacent to a depression formed on a layer to be patterned, including a chromium pattern formed on a quartz substrate and a plurality of dot patterns formed on the quartz substrate and disposed adjacent to a portion of the chromium pattern overlapping with the depression of the layer to be patterned, the dot patterns being adapted to reduce an intensity of a light incident on a portion of the quartz substrate overlapping with the depression of the layer to be patterned, thereby capable of preventing an occurrence of a notching phenomenon, at a photoresist film pattern, caused by an irregular light reflection generated by a slant surface of the depression. The photo mask makes it possible to prevent the photoresist film pattern form being damaged due to a light exposure of an unintended portion of the photoresist film to a light reflected by the slant surface.

Abstract: An overlay measurement mark and a method of measuring an overlay error between multi patterns of a semiconductor device. A first overlay measurement patterns are formed on a first selected portion of a scribe line by a first mask which is formed considering the margin between the first mask pattern and the second pattern, with the first overlay measurement pattern consisting of two patterns spacing parallel to each other. A second overlay measurement patterns are formed on a second selected portion of the scribe line by a second mask which is formed considering the margin between the second mask pattern and the third mask pattern so as not to superimpose the first overlay measurement patterns, with the second overlay measurement patterns consisting of two patterns spacing parallel to each other.

Abstract: There is disclosed a method for the formation of photoresist film. The photoresist film of a semiconductor is formed by a method consisting broadly of: feeding a photoresist solution onto a rugged surface of a wafer which is rotated at a low speed, to form a photoresist film with a smooth surface; turning the wafer right over, to make the photoresist film of smooth surface look downward; and rotating the wafer at a high speed. The formed photoresist film becomes rugged along the topology of the wafer, resulting in close similarity in the thickness of the photoresist film. Owing to this similarity, the light absorptivity is almost identical all over the present photoresist film, so that advantages are effected such as an increase in the reliability and production yield of highly integrated semiconductor device.

Abstract: An energy-saving photomask comprises: at least one first pattern region in which a light can penetrate through the photomask without diffraction; and a second pattern region in which a plurality of fine patterns are formed in such a way to serve as slits through which the light is diffracted to increase the energy of the light irradiated relative to the first pattern region and diffracted to an extent that it comes to have an insufficient energy for the development of all photosensitive film except below the first pattern region. By virtue of the auxiliary patterns, the energy of the light incident on the photosensitive film can be rich at the auxiliary patterns contributes intensity of light to the desired portions without seriously affecting other portions. Because of a reduction of processing time, the photomask prolongs the lifetime of a light lamp in the stepper, as well as allows usage of a stepper with low power.