Abstract: Described herein are novel lipid compositions comprising unsaturated dendrimers and methods of synthesis of unsaturated dendrimers. The lipid composition can comprise an ionizable cationic lipid, a phospholipid, and a selective organ targeting lipid. Also described herein are pharmaceutical formulations comprising an unsaturated dendrimer, a lipid composition, and a therapeutic agent. Further described in here are methods of mRNA delivery comprising a lipid composition and a therapeutic agent. Further described herein are high-potency dosage forms of a therapeutic formulated with a lipid composition.

Abstract: Described herein are liposome-based nanocarriers that selectively target bone marrow, minimize tumor delivery, and maintain high drug concentrations in bone marrow when compared to conventional systemic delivery. The composition of the liposome-based nanocarriers may also be tuned to selectively target lymph nodes and other reticuloendothelial system organs (e.g., spleen, e.g., livers. Also described herein are methods of imaging and mapping the bone marrow and/or other reticuloendothelial system organs using the described liposome-based nanocarriers. These methods provide high resolution non-invasive and quantitative imaging via PET, which offers advantages over conventional imaging/tracking methods. Furthermore, in certain embodiments, the liposome-based carriers are used to stabilize and deliver radioprotectant/free radical scavenger drugs to the bone marrow, thereby protecting the bone marrow from subsequent radiation exposure, thereby limiting the adverse impact of radiation exposure of the individual.

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract: Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.

Abstract: A shoe washing device including a motor for driving a rotor onto which the shoes are directly mounted as by aligning the soles of the shoes parallel to the axis of rotation of the rotor. The shoes are affixed onto the rotor by using a clip, strap, cage, or other attachment means. The shoes are then rotated within the wash compartment into which a wash fluid is introduced in a wash cycle and removed following a wash cycle. An integrated drying component may allow air drying of the shoes during a final spin cycle.

Abstract: A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

Abstract: A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.

Abstract: Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.

Abstract: A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

Abstract: An apparatus and a method for detecting scene change using difference of MAD(Mean Absolute Difference), so called dMAD wherein the method for detecting scene change using difference of mean absolute difference(dMAD) between image frames by use of scene change detecting apparatus comprising frame memory, first absolute calculator, accumulator, multiplicator, first latch circuit, second absolute calculator, first comparator, second comparator, selector and second latch circuit, the method comprising the steps of: (A) calculating MAD of the `n`th input image frame and checking whether scene change judgement variable, which is used for current frame according to scene change of previous frame, is `1`; (B) judging scene change only using MAD since current frame corresponds to the second frame of new scene when scene change variable is `1` at said step (a); (C) judging scene change using dMAD as scene change variable when scene change variable is not `1` at said step (a); (D) saving scene change state and MAD of th

Abstract: An image signal transmitting system uses the difference between image frames, which can transmit lots of information in a small amount of data, by transmitting the acutal moving areas which are extracted by using two change detecting masks and whose contours and textures are encoded for human visual perception. A larger amount of information is expresssed by a smaller amount of data by extracting the motion in a unit of frames, not in a unit of blocks, and expressing a converted portion by its contour and texture to facilitate the recognition of the converted portion.

Abstract: Process for the preparation of hydridocarbonyl tris (triorganophosphorus) rhodium compounds from a concentrated hydroformylation reaction mixture.

Abstract: A process for preparing N,N'-disubstituted urea derivatives of the following formula (I) ##STR1## wherein Ar represents an unsubstituted aromatic radical or an aromatic radical substituted with a halogen atom, an alkyl group, or an alkoxy group, which comprises reacting an aromatic mono-nitro compound, an aromatic primary amine, and synthesis gas in the presence of a catalyst consisting essentially of a divalent palladium compound as a main catalyst component and an ammonium or a phosphonium salt containing halogen atom as a co-catalyst component, and a non-polar solvent.