Abstract: A display panel is provided. The display panel includes: a panel assembly having a plurality of substrates for displaying an image by luminescence of a phosphor layer; and a filter assembly coupled to the panel assembly and having a minimum transmittance at a wavelength between 550 and 580 nanometers.

Abstract: A filter for a plasma display panel (PDP) is configured to provide a white balance of the PDP viewed through the filter in a negative region of a minimum perceptible color difference (MPCD).

Abstract: An optical filter includes a support layer, absorption patterns on a first surface of the support layer, the absorption patterns having a predetermined interval therebetween, and adhesion members on the first surface of the support layer, the adhesion members being buried in the predetermined interval between the absorption patterns.

Abstract: A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system.

Abstract: Provided is a display apparatus that includes a panel assembly which has a plurality of substrates and displays images, and a filter assembly which is formed in front of the panel assembly, has a base film, a refraction control film layer that is attached to at least a surface of the base film and has a refractive index different from that of the base film, and an optical absorption layer that is formed on an outer surface of the base film or the refraction control film layer to absorb refracted incident external light. The display apparatus can increase bright room contrast by absorbing incident external light by employing a film coated with a black group color on a front surface of a panel. Also, a direct attachable filter assembly is used to remove an interface between the substrate and the filter assembly. Thus, a double image problem caused by refraction of light at the interface is prevented.

Abstract: An optical filter includes a base film and at least two conductive layers stacked on the base film, a first conductive layer of the two conductive layers having a first thickness and a first refractive index, and a second conductive layer of the two conductive layers having a second thickness and a second refractive index, the first and second refractive indices and the first and second thicknesses being configured to generate a destructive interference of external light reflected from the first and second conductive layers.

Abstract: In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract: In a method for removing a nitride layer of a semiconductor device, an etchant including about 15 to about 40 percent by volume of hydrofluoric acid, about 15 to about 60 percent by volume of phosphorous acid, and about 25 to about 45 percent by volume of deionized water is prepared. The etchant is provided onto a nitride layer that is formed on a bevel, a front side or a backside of a substrate to remove the nitride layer. The substrate is rinsed using deionized water, and then the substrate is dried. The etchant rapidly removes the nitride layer at a relatively low temperature to avoid damage to the substrate.

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract: In a method for removing a nitride layer of a semiconductor device, an etchant including about 15 to about 40 percent by volume of hydrofluoric acid, about 15 to about 60 percent by volume of phosphorous acid, and about 25 to about 45 percent by volume of deionized water is prepared. The etchant is provided onto a nitride layer that is formed on a bevel, a front side or a backside of a substrate to remove the nitride layer. The substrate is rinsed using deionized water, and then the substrate is dried. The etchant rapidly removes the nitride layer at a relatively low temperature to avoid damage to the substrate.

Abstract: Disclosed are a cleaning solution and a method of cleaning a semiconductor substrate using the same without damaging the substrate. The cleaning solution includes from about 10% to about 35% by weight of hydrogen fluoride (HF), from about 10% to about 35% by weight of ammonium fluoride (NH4F) and from about 30% to about 80% by weight of de-ionized water (H2O). A nitride layer at a side or bottom portion of the substrate, or on a control substrate can be rapidly removed using the cleaning solution.