Abstract: A rechargeable battery includes an electrode assembly, a case, a cap assembly, and a current collecting plate. The electrode assembly includes an anode, a cathode, and a separator interposed between the anode and the cathode. The case houses the electrode assembly and has an opening and has a closed end. The cap assembly is coupled to the opening of the case, and is electrically connected to the electrode assembly. The current collecting plate is electrically connected to the anode or the cathode, and has a guide portion. The guide portion bends toward the electrode assembly to be in contact with the electrode assembly.

Abstract: The plasma etching apparatus effectively removes an outgrowth caused by the etching in the chamber after performing a fabrication process, and a chamber cleaning method using the plasma etching apparatus. The plasma etching apparatus includes: a chamber in which an etching process of a substrate is conducted using a plasma; upper and lower electrodes arranged in the chamber; a RF power-supply unit which simultaneously applies a RF power to the upper and lower electrodes; and a controller which adjusts a power ratio of the RF power simultaneously applied to the upper and lower electrodes, and controls a plasma distribution for cleaning an inner part of the chamber. As a result, the plasma is evenly formed in the chamber, so that a cleaning efficiency can be maximized.

Abstract: Disclosed is a plasma processing apparatus and a method thereof. A plasma processing apparatus includes a chamber for processing a semiconductor substrate by generating plasma, upper and lower electrodes installed in the chamber, a high frequency power supply for supplying high frequency power to the upper and lower electrodes, and a phase controller adjusting a phase difference of the high frequency power supplied to the upper and lower electrodes.

Abstract: Disclosed is an etching method for a semiconductor device. The protecting layer, such as the hydrocarbon layer or the hydrocarbon layer containing phosphorous, is formed on the photoresist layer by using the precursor gas containing no fluorine. Therefore, the etching process enabling the thin photoresist to have a high selectivity can be performed, thereby improving the etching efficiency. The method includes the steps of placing a semiconductor substrate in a chamber, in which a material layer is formed on the semiconductor substrate and a photoresist layer is formed on the material layer, forming a hydrocarbon layer on the photoresist layer by introducing precursor gas containing no fluorine into the chamber and etching an etching target material by introducing etching gas into the chamber.

Abstract: A fuel cell stack includes a body that includes electrical generators and a device that is electrically connected to the electrical generators to measure an electrical output from the electrical generators. The device includes a base substrate that is fixed to the body and terminal members that are formed on the base substrate and electrically connected to the electrical generators.

Abstract: A fuel cell system includes a fuel cell stack, a reformer which generates a reformed gas through a reforming reaction between a gaseous fuel and water and supplies the reformed gas to the fuel cell stack, a fuel tank which compresses the gaseous fuel, stores the compressed fuel in an at least a partially liquid phase, and supplies the gaseous fuel to the reformer, a water tank connected to the fuel tank and the reformer to store water and to supply the water to the reformer by an internal air pressure of the fuel tank, and a first valve installed in a connection line connecting the water tank to the fuel tank to selectively open or close the connection line according to an electrical on/off pulse signal.