Abstract: Provided is an apparatus for generating an aerosol by induction heating, the apparatus including: at least one susceptor formed in an elongated structure extending in a longitudinal direction of a cigarette to be accommodated in the apparatus, and arranged to be inserted into the cigarette to heat the cigarette; an ejector including an accommodating space for accommodating the cigarette, and an opening formed at one end of the accommodating space so that the cigarette is inserted in the accommodating space, wherein the at least one susceptor is arranged opposite the one end in the accommodating space, and the ejector is detached from and attached to the apparatus together with the at least one susceptor; and a coil arranged to surround the ejector along the longitudinal direction when the ejector is coupled to the apparatus, and configured to apply an alternating magnetic field to the at least one susceptor so that the at least one susceptor generates heat.

Abstract: A method for performing a double pattering process of a semiconductor device is provided. The method includes forming a hard mask layer having a stack structure of a first layer, a second layer and a third layer in sequence, forming a first photoresist pattern over the hard mask layer, etching the third layer to form third layer patterns by using the first photoresist pattern as an etch barrier, forming a second photoresist pattern over the third layer patterns, etching the second layer to form second layer patterns by using the second photoresist pattern and the third layer patterns as an etch barrier, removing the second photoresist pattern, and etching the first layer to form first layer patterns by using the second layer patterns as an etch barrier.

Abstract: A method for performing a double pattering process of a semiconductor device is provided. The method includes forming a hard mask layer having a stack structure of a first layer, a second layer and a third layer in sequence, forming a first photoresist pattern over the hard mask layer, etching the third layer to form third layer patterns by using the first photoresist pattern as an etch barrier, forming a second photoresist pattern over the third layer patterns, etching the second layer to form second layer patterns by using the second photoresist pattern and the third layer patterns as an etch barrier, removing the second photoresist pattern, and etching the first layer to form first layer patterns by using the second layer patterns as an etch barrier.