Abstract: Provided herein are medical devices comprising a plurality of biologically interactive devices configured for interacting with a large area biological surface. The biologically interactive devices each may comprise a sensor for measuring a physiological parameter. A wireless controller is configured to wirelessly operate the plurality of biologically interactive devices. A wireless transmitter is configured for wirelessly communicating an output from said plurality of biologically interactive devices to a remote receiver. The medical devices are particularly suited for measuring one or both of pressure and temperature, with compatibility for incorporating additional sensors of interest.

Abstract: Provided herein are medical devices comprising a plurality of biologically interactive devices configured for interacting with a large area biological surface. The biologically interactive devices each may comprise a sensor for measuring a physiological parameter. A wireless controller is configured to wirelessly operate the plurality of biologically interactive devices. A wireless transmitter is configured for wirelessly communicating an output from said plurality of biologically interactive devices to a remote receiver. The medical devices are particularly suited for measuring one or both of pressure and temperature, with compatibility for incorporating additional sensors of interest.

Abstract: Provided herein are medical devices comprising a plurality of biologically interactive devices configured for interacting with a large area biological surface. The biologically interactive devices each may comprise a sensor for measuring a physiological parameter. A wireless controller is configured to wirelessly operate the plurality of biologically interactive devices. A wireless transmitter is configured for wirelessly communicating an output from said plurality of biologically interactive devices to a remote receiver. The medical devices are particularly suited for measuring one or both of pressure and temperature, with compatibility for incorporating additional sensors of interest.

Abstract: Provided herein are medical devices comprising a plurality of biologically interactive devices configured for interacting with a large area biological surface. The biologically interactive devices each may comprise a sensor for measuring a physiological parameter. A wireless controller is configured to wirelessly operate the plurality of biologically interactive devices. A wireless transmitter is configured for wirelessly communicating an output from said plurality of biologically interactive devices to a remote receiver. The medical devices are particularly suited for measuring one or both of pressure and temperature, with compatibility for incorporating additional sensors of interest.

Abstract: A semiconductor device includes an active region tilted at an angle with respect to a buried bit line. The buried bit line includes a metal silicide pattern and a metal pattern. The metal silicide pattern has a plurality of metal silicide films each disposed at a lower portion of the active region and corresponding to a bit line contact region. The metal pattern has a plurality of metal films. The metal silicide films and the metal films are alternately arranged and electrically coupled to each other.

Abstract: A semiconductor device includes an active region tilted at an angle with respect to a buried bit line. The buried bit line includes a metal silicide pattern and a metal pattern. The metal silicide pattern has a plurality of metal silicide films each disposed at a lower portion of the active region and corresponding to a bit line contact region. The metal pattern has a plurality of metal films. The metal silicide films and the metal films are alternately arranged and electrically coupled to each other.

Abstract: A semiconductor device includes an active region tilted at an angle with respect to a buried bit line. The buried bit line includes a metal silicide pattern and a metal pattern. The metal silicide pattern has a plurality of metal silicide films each disposed at a lower portion of the active region and corresponding to a bit line contact region. The metal pattern has a plurality of metal films. The metal silicide films and the metal films are alternately arranged and electrically coupled to each other.

Abstract: A semiconductor device includes an active region tilted at an angle with respect to a buried bit line. The buried bit line includes a metal silicide pattern and a metal pattern. The metal silicide pattern has a plurality of metal silicide films each disposed at a lower portion of the active region and corresponding to a bit line contact region. The metal pattern has a plurality of metal films. The metal silicide films and the metal films are alternately arranged and electrically coupled to each other.

Abstract: A semiconductor device includes a gate structure penetrating an interlayer insulating layer formed on a semiconductor substrate, an epitaxial growth layer grown on the interlayer insulating layer, a first transistor including a first channel region in the semiconductor substrate formed by a bias applied to source/drain contacts penetrating the interlayer insulating layer, and a second transistor including a second channel region formed in the epitaxial growth layer by the bias applied to the source/drain contacts and sharing the gate structure. A current flowable path flows more current at any given time, so that operation current is increased and operation speed is improved. A smaller area of the semiconductor device is necessary to cause the current to flow, and the effective net die area is increased.

Abstract: A semiconductor device includes a gate structure penetrating an interlayer insulating layer formed on a semiconductor substrate, an epitaxial growth layer grown on the interlayer insulating layer, a first transistor including a first channel region in the semiconductor substrate formed by a bias applied to source/drain contacts penetrating the interlayer insulating layer, and a second transistor including a second channel region formed in the epitaxial growth layer by the bias applied to the source/drain contacts and sharing the gate structure. A current flowable path flows more current at any given time, so that operation current is increased and operation speed is improved. A smaller area of the semiconductor device is necessary to cause the current to flow, and the effective net die area is increased.