Abstract: A method for fabricating a silicon on insulator wafer, comprising the steps of: preparing a base substrate and a semiconductor substrate; forming a first insulating layer on the base substrate; forming first isolation layers of trench types having a first depth in one surface of the semiconductor substrate; forming second isolation layers of trench types having a second depth between the first isolation layers, the second depth being deeper than the first depth; forming a second insulating layer over one surface of the semiconductor rate including the first and second isolation layers; bonding the base substrate and the semiconductor substrate to contact the first insulating layer with the second insulating layer; firstly polishing another surface of the semiconductor substrate to expose the second isolation layers using the second isolation layers as polishing stoppers; etching the second isolation layers to have the same depth as the first isolation layers; and secondly polishing the first polished another

Abstract: The present invention provides a method of forming SOI substrate provided with an isolation layer. Since a thinning process is performed at the semiconductor silicon layer after isolation layers are formed on the semiconductor silicon layer, the occurrence of dishing is prevented.

Abstract: Disclosed is a method for fabricating a silicon-on-insulator wafer, particularly to a cost reductive method.