Abstract: A display device and a method of driving the same, in which the display device includes: a light-emitting element; a first capacitor connected between first and second contact points; a driving transistor that has a control terminal connected to the second contact point, an input terminal connected to a driving voltage, and an output terminal connected to the light-emitting element; a first switching transistor connected between a data voltage or a sustain voltage and the first contact point; a second switching transistor connected between the second contact point and the output terminal of the driving transistor; and a third switching transistor connected between a reference current source and the output terminal of the driving transistor.

Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a Si02 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 A or more. An interface trap density of the Si02 can be as high as lo?/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 ? or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

Abstract: An organic light emitting display that can minimize degradation of a drive transistor comprising a first switching element whose control electrode is electrically coupled to a scan line, being electrically coupled between a data line and a first voltage line for transmitting a data signal; a drive transistor whose control electrode is electrically coupled to the first switching element, being electrically coupled between the first and second voltage lines; an organic light emitting diode electrically coupled to the drive transistor, displaying an image by a current supplied through the drive transistor; a first capacitive element electrically coupled between the control electrode of the drive transistor and the first switching element; a second capacitive element electrically coupled between the first capacitive element and the second voltage line; a second switching element electrically coupled between the first voltage line and the control electrode of the drive transistor; a third switching element electri

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 ? or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.