Abstract: A nonvolatile memory device includes: a plurality of memory cells arranged in a region where word lines and bit lines intersect, a data read/write circuit including a plurality of latches configured to temporarily store data inputted from an external device, and configured to perform a program operation on the memory cells based on data stored in the latches, and a skip data control unit configured to determine whether data to be programmed into the memory cells are available, and to store program-inhibit data in a latch corresponding to a memory cell which is determined to not contain any data.

Abstract: A nonvolatile memory device includes: a page buffer block including a plurality of cache latches configured to temporarily store data inputted to program memory cells, and configured to program the inputted data into the memory cells; and a column decoder configured to provide column select signals for selecting the cache latches to the cache latches according to a column address, wherein the column decoder activates column select signals for selecting a part of the cache latches at substantially the same time, while data are set up in the cache latches.

Abstract: A nonvolatile memory device includes: a plurality of memory cells arranged in a region where word lines and bit lines intersect, a data read/write circuit including a plurality of latches configured to temporarily store data inputted from an external device, and configured to perform a program operation on the memory cells based on data stored in the latches, and a skip data control unit configured to determine whether data to be programmed into the memory cells are available, and to store program-inhibit data in a latch corresponding to a memory cell which is determined to not contain any data.