Patents by Inventor Sang-Oak Shim

Sang-Oak Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having bulb-shaped recess gate and method for fabricating the same
    Patent number: 7892896
    Abstract: A semiconductor device includes: a substrate; a first junction region and a second junction region formed separately from each other to a certain distance in the substrate; an etch barrier layer formed in the substrate underneath the first junction region; and a plurality of recess channels formed in the substrate between the first junction region and the second junction region.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: February 22, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Sang-Oak Shim
  • SEMICONDUCTOR DEVICE HAVING BULB-SHAPED RECESS GATE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20100159654
    Abstract: A semiconductor device includes: a substrate; a first junction region and a second junction region formed separately from each other to a certain distance in the substrate; an etch barrier layer formed in the substrate underneath the first junction region; and a plurality of recess channels formed in the substrate between the first junction region and the second junction region.
    Type: Application
    Filed: March 3, 2010
    Publication date: June 24, 2010
    Inventor: Sang-Oak SHIM
  • Semiconductor device having bulb-shaped recess gate and method for fabricating the same
    Patent number: 7700979
    Abstract: A semiconductor device includes: a substrate; a first junction region and a second junction region formed separately from each other in the substrate; an etch barrier layer formed in the substrate underneath the first junction region; and a plurality of recess channels formed in the substrate between the first junction region and the second junction region.
    Type: Grant
    Filed: March 19, 2007
    Date of Patent: April 20, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventor: Sang-Oak Shim
  • Semiconductor device having bulb-shaped recess gate and method for fabricating the same
    Publication number: 20070235778
    Abstract: A semiconductor device includes: a substrate; a first junction region and a second junction region formed separately from each other in the substrate; an etch barrier layer formed in the substrate underneath the first junction region; and a plurality of recess channels formed in the substrate between the first junction region and the second junction region.
    Type: Application
    Filed: March 19, 2007
    Publication date: October 11, 2007
    Inventor: Sang-Oak Shim