Patents by Inventor Sang Q. Tran

Sang Q. Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a hot film sensor system on a model
    Patent number: 5789020
    Abstract: A method of forming a hot film sensor directly on a model is provided. A polyimide solution is sprayed onto the model. The model so sprayed is then heated in air. The steps of spraying and heating are repeated until a polyimide film of desired thickness is achieved on the model. The model with the polyimide film thereon is then thoroughly dried in air. One or more hot film sensors and corresponding electrical conducting leads are then applied directly onto the polyimide film.
    Type: Grant
    Filed: March 11, 1996
    Date of Patent: August 4, 1998
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Sang Q. Tran
  • Method of forming a composite coating with particle materials that are readily dispersed in a sprayable polyimide solution
    Patent number: 5753306
    Abstract: A method for creating a composite form of coating from a sprayable solution of soluble polyimides and particle materials that are uniformly dispersed within the solution is described. The coating is formed by adding a soluble polyimide to a solvent, then stirring particle materials into the solution. The composite solution is sprayed onto a substrate and heated in an oven for a period of time in order to partially remove the solvent. The process may be repeated until the desired thickness or characteristic of the coating is obtained. The polyimide is then heated to at least 495.degree. F. so that it is no longer soluble.
    Type: Grant
    Filed: September 11, 1996
    Date of Patent: May 19, 1998
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Sang Q. Tran
  • Method of forming a multiple layer dielectric and a hot film sensor therewith
    Patent number: 5158801
    Abstract: The invention is a method of forming a multiple layer dielectric for use in a hot-film laminar separation sensor 21. The multiple layer dielectric substrate is formed by depositing a first layer 22 of a thermoplastic polymer such as on an electrically conductive substrate such as the metal surface 23 of a model 24 to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer 26 of fused silica is formed on the first dielectric layer 22 of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate to form one or more hot-film sensor elements 27 to which aluminum electrical circuits 28 deposited upon the multiple layered dielectric substrate are connected.
    Type: Grant
    Filed: April 15, 1991
    Date of Patent: October 27, 1992
    Assignee: The United States of America as represented by the United States Administrator of the National Aeronautics and Space Administration
    Inventors: Purnell Hopson, Jr., Sang Q. Tran
  • Method of forming a multiple layer dielectric and a hot film sensor therewith
    Patent number: 4917940
    Abstract: A multiple layer dielectric for use in a hot-film laminar separation layer 21. The multiple layer dielectric substrate is formed by depositing a first layer 22 of a thermoplastic polymer such as on an electrically conductive substrate such as the metal surface 23 of a model 24 to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer 26 of fused silica is formed on the first dielectric layer 22 of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate of form one or more hot-film sensor elements 27 to which aluminum electrical circuits 28 deposited upon the multiple layered dielectric substrate are connected.
    Type: Grant
    Filed: April 1, 1988
    Date of Patent: April 17, 1990
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Hopson, Jr. Purnell, Sang Q. Tran