Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature.

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature.

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature.

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature.

Abstract: A lead frame for making a semiconductor package is disclosed. The leadframe's leads include a lead lock provided at a free end of each inner lead that is adapted to increase a bonding force of the inner lead to a resin encapsulate, thereby effectively preventing a separation of the inner lead from occurring in a singulation process involved in the fabrication of the semiconductor package. A semiconductor package fabricated using the lead frame and a fabrication method for the semiconductor package are also disclosed.

Abstract: The present invention provides a series of baroplastic materials, and systems and methods of making and using such baroplastic materials. In one aspect of the invention, polymeric particles are provided that can be used to produce baroplastic materials under certain pressures and/or below certain temperatures. In one set of embodiments, the polymeric particles include an inner “core” region and an outer “shell” region. In some cases, more than one “shell” region may be present. In another arrangement the particles can include materials, or domains, in nanoscale proximity with each other. Non-particulate materials can also be processed in accordance with the invention. In another aspect of the invention, the invention provides for polymeric particles that can be processed and/or recycled multiple times, without causing significant degradation or alteration in the physical and/or chemical properties of the polymer.

Abstract: The present invention relates to a polyarylate prepared by a method comprising a step of copolymerizing divalent phenol, divalent aromatic carboxylic acid halide and the allyl bisphenol derivative. The polyarylate according to the invention is a novel polyarylate in which various functional groups can be introduced to the main chain of the polymer as well as the terminal of a polymer, and the concentration thereof can be adjusted. These functional groups allow improvement in the adhesion force by chemically bonding with the substrate or protective layer when coated, thus the polyarylate is suitably used for a film or a coating composition.

Abstract: Disclosed are a negative C-type compensation film and a method of preparing the same. The negative C-type compensation film includes a) a base layer, and b) a polymer layer comprising polyarylate prepared by a method comprising the step of copolymerizing divalent phenols, divalent aromatic carboxylic acid halides, and allyl bisphenol derivatives, the base layer and the polymer layer being sequentially layered. The compensation film is capable of being used for the negative C-type compensation film without a stretching process, significantly reduces the thickness of the compensation film, and has significantly improved interlayer adhesion force in a multilayer structure.

Abstract: Provided are a phase change memory device and a method of fabricating the same capable of maximizing a contact area of a phase change layer and a heating electrode. The memory device includes a heating electrode and a phase change layer. The heating electrode covers at least one side exposed by a pore and a portion of a surface of a lower electrode and includes a recess region. The phase change layer is stacked on the heating electrode filling up the recess region. The memory device may maximize a contact area of the phase change layer and the heating electrode, thereby greatly reducing power consumption.

Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

Abstract: Provided are compositions for cleaning a semiconductor device that comprises (a) an inorganic acid in an amount ranging from 10 to 90 wt %, (b) a hydrofluoric acid compound in an amount ranging from 0.0001-1 wt %, (c) an additive in an amount ranging from 0-5 wt %, and (d) residual water to remove residuals of photoresist and metallic etching polymers which are generated in a dry etching process and an ashing process for manufacturing fine patterns of semiconductor device.

Abstract: A variable steering rack system in one embodiment includes a pair of stop rings and a stopper moveable between the rings. The stopper may be rotatable in one embodiment during translational movement between the rings by a motor. Preferably, the stopper may stop due to a frictional engagement between the stopper and the stop rings. Noise may be reduced, and because the motor may rotate at a high speed, motor performance may not be degraded under low temperature circumstances.

Abstract: A kimchi refrigerator having sensing devices to sense whether doors of the kimchi refrigerator are opened. The kimchi refrigerator includes a main body forming an external appearance, and including storage chambers opened at one surface for storing food; doors to open and close the opened surfaces of the storage chambers; and sensing devices to sense whether the doors are opened. Since the sensing devices detect whether the doors are opened and the opening time of the doors, and lamps to illuminate the inner portions of the storage chambers and alarm devices to inform a user of the opening of the doors for a designated time or more are turned on and off based on the results detected by the sensing devices, the kimchi refrigerator compensates for the leaked cold air due to the opening of the doors.

Abstract: The surface of a solder ball and a conductive wire for a semiconductor package are coated with a predetermined colorant. Various colorants may be used according to the diameter and metal composition of the solder ball and the conductive wire. The colorant is formed by mixing organic compound and dye of a predetermined color. Examples of organic compounds excellent in physicochemical bonding with metal include benzotriazole, alkylimidazole and benzimidazole. The solder ball is fabricated by coating an organic compound of a predetermined color on the surface of a typical solder ball. The conductive wire is fabricated by coating an organic compound of a predetermined color on a general conductive wire between heat process and winding. Moreover, the solder ball is evaporated in a reflowing step after bumped via flux and the conductive wire is evaporated in a wire bonding step so that the solder ball and the conductive wire return to their unique colors.

Abstract: The present invention discloses a method for forming an interlayer insulation film in a semiconductor device, comprising the steps of: sequentially forming a porous low dielectric insulation film and a capping layer on the semiconductor substrate on which a few elements of the semiconductor device have been formed; and forming damascene patterns in the porous low dielectric insulation film by an etching process, and forming a protection film for closing pores exposed during the etching process at the same time.

Abstract: A tool magazine feeder for an automatic tool changer for feeding a tool magazine to a spindle comprises a carriage horizontally movable, under the state of supporting the tool magazine, between a remote position where the carriage is separated from the spindle and a proximate position where the carriage is adjacent to the spindle, a driving mechanism for reciprocating the carriage from the remote position to the proximate position and vice versa, and a guide mechanism positioned between the carriage and the driving mechanism. The guide mechanism is provided with one or more rollers and one or more rails for guiding the carriage to horizontally move between the remote position and the proximate position.

Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

Abstract: The present invention relates to a method of forming a metal line in a semiconductor device, in which an etch-stopping layer is deposited between the interlayer insulation films and then over-etching is performed by using the etch-stopping layer as an etching barrier during the etching process for forming the subsequent trenches. Therefore, it is possible to restrain occurrence of parasitic spacers in the trenches.

Abstract: The present invention is provided to form a trench in a semiconductor device, wherein by performing an ion implanting process to an area of a semiconductor substrate in which the trench would be formed to cause lattice defects in the area before forming the trench, an etching speed of the area is increased in subsequent trench forming processes. As a result, it is possible to prevent micro trenches from being formed in edge portions of patterns and to suppress a micro loading effect to be generated depending upon pattern sizes.