Abstract: A photobioreactor fabrication system is disclosed. According to a first embodiment, the photobioreactor fabrication system includes a first unwinder 10 continuously unwinding a first transparent film 1, a second unwinder 20 arranged parallel to the first unwinder 10 and continuously unwinding a second transparent film 2 such that the second film 2 faces the first film 1, a heat sealer 30 pressurizing and heat sealing the first 1 and second films 2 to a baffle 3 arranged between the first 1 and second films 2 facing each other, and a rewinder 40 simultaneously and continuously winding the first 1 and second films 2 having passed through the heat sealer 30.

Abstract: Disclosed is a small animal intraventricular injection compensator for injecting a drug into a desired location through a syringe, the compensator including: a guide part provided with a guide hole into which a needle of a syringe is inserted; a body comprising an upper cavity provided inside thereof and a cradle provided to seat the guide part on an upper side thereof; and a fixation part integrally provided with the body or separately provided, and comprising a lower cavity provided to allow a head accommodation space, which a head of a small animal may enter into or exit from, to be provided inside thereof by corresponding to the upper cavity.

Abstract: A method for manufacturing a flavor capsule of tobacco according to an embodiment of the present disclosure may comprise: a membrane manufacturing step for manufacturing a membrane of a flavor capsule by a membrane manufacturing part that manufactures a membrane; a capsule manufacturing step for manufacturing the flavor capsule using an apparatus for manufacturing a capsule with the membrane manufactured during the membrane manufacturing step and a flavored liquid to be held in the membrane; and a hardening step for hardening the flavor capsule.

Abstract: A method for providing information on a user's concept understanding is provided. The method includes acquiring a set of data on a user's understanding of concepts including a first concept estimated using a concept-specific understanding estimation model that is trained on the basis of concept-specific correctness/incorrectness sequence data, estimating the user's understanding of a second concept not encountered by the user using a matrix factorization algorithm on the concept-specific correctness/incorrectness sequence data represented in a matrix structure with respect to the first concept and the second concept, and visualizing the user's understanding of the first concept included in the acquired data set and the second concept on a device of the user. The concept-specific understanding estimation model is trained such that the concept understanding is estimated by assigning a greater weight to a piece of the concept-specific correctness/incorrectness sequence data generated at a later time point.

Abstract: A buffer unit for temporarily storing a substrate includes a housing having a space for storing a substrate therein, one or more slots disposed within the housing for placing a substrate thereon, and a holding unit disposed at a bottom portion of the housing, having a flat and non-inclined top surface, and comprising a built-in wireless charging module. A substrate type sensor is stored at the holding unit.

Abstract: Disclosed are a solid electrolyte and method of manufacturing the same. The solid electrolyte may include a core including a first electrolyte represented by Chemical Formula 1, and a shell including a second electrolyte represented by Chemical Formula 2, and disposed on a surface of the core. LiaPSbX1c??[Chemical Formula 1] Here, a satisfies an equation 4?a?7, b satisfies an equation 3?b?7, c satisfies an equation 0?c?2, and X1 includes Br or I. LidPSeX2f??[Chemical Formula 2] Here, d satisfies an equation 4?d?7, e satisfies an equation 3?e?7, f satisfies an equation 0?f?2, X2 includes Cl or Br, and an ionic radius of X1 is greater than an ionic radius of X2.

Abstract: A method for providing a correctness/incorrectness prediction for a learning question is provided. The method includes the steps of: acquiring a set of data including a user variable determined on the basis of concept-specific correctness/incorrectness sequence data of at least one user, and at least one variable related to a question and a concept associated with the user variable; and calculating a probability that a first user corresponding to a specific user variable correctly answers a first question corresponding to a specific concept, with reference to the data set.

Abstract: The present invention relates to htSNPs for determining a genotype of cytochrome P450 1A2 (CYP1A2), 2A6 (CYP2A6) and 2D6 (CYP2D6), PXR and UDP-glucuronosyltransferase 1a (UGT1A) genes and a gene chip using the same, and more particularly, to a selection method of htSNPs for determining a haplotype of human CYP1A2, CYP2A6, CYP2D6, PXR and UGT1A genes, a method of determining a genotype of the genes by using the htSNPs and a gene chip therefor.

Abstract: The present invention relates to htSNPs for determining a genotype of cytochrome P450 1A2 (CYP1A2), 2A6 (CYP2A6) and 2D6 (CYP2D6), PXR and UDP-glucuronosyltransferase 1a (UGT1A) genes and a gene chip using the same, and more particularly, to a selection method of htSNPs for determining a haplotype of human CYP1A2, CYP2A6, CYP2D6, PXR and UGT1A genes, a method of determining a genotype of the genes by using the htSNPs and a gene chip therefor.

Abstract: Provided is a trench line for the disconnection of a solar cell, capable of effectively insulating a semiconductor layer at an upper portion of a substrate from a semiconductor layer at a side portion of the substrate and improving disconnection reliability. The trench line for the disconnection of a solar cell according to the disclosure which electrically insulates the semiconductor layers formed at the upper portion and the side portion of the substrate of the solar cell from each other, includes a plurality of unit trench lines which are disposed to intersect at an upper surface of the substrate of the solar cell. Intersecting points of the intersecting unit trench lines are positioned on the unit trench lines and are positioned at points spaced inwardly from starting points or ending points of the unit trench lines by a predetermined distance.

Abstract: A method of manufacturing a semiconductor device including forming a first conductive-type buried layer in a substrate; forming a first conductive-type drift area on the first conductive-type buried layer; forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area; forming a first oxide layer on the substrate and gate electrodes; implanting second conductive-type impurity ions into the substrate; forming a nitride layer on the first oxide layer; forming a second conductive-type well by diffusing the second conductive-type impurity ions while forming a second oxide layer; removing the nitride layer, the second oxide layer, and portions of the first oxide layer; forming first conductive-type source areas at sides of the gate electrode(s); forming a dielectric layer on the oxide layer; forming a trench in the dielectric layer and the oxide layer; forming a source contact in the trench; and forming a drain.

Abstract: The present invention relates to htSNPs for determining a genotype of cytochrome P450 1A2 (CYP1A2), 2A6 (CYP2A6) and 2D6 (CYP2D6), PXR and UDP-glucuronosyltransferase Ia (UGT1A) genes and a gene chip using the same, and more particularly, to a selection method of htSNPs for determining a haplotype of human CYP1A2, CYP2A6, CYP2D6, PXR and UGT1A genes, a method of determining a genotype of the genes by using the htSNPs and a gene chip therefor.

Abstract: A method of manufacturing a semiconductor device including forming a first conductive-type buried layer in a substrate; forming a first conductive-type drift area on the first conductive-type buried layer; forming a gate insulating layer and gate electrodes by selectively removing the first conductive-type drift area; forming a first oxide layer on the substrate and gate electrodes; implanting second conductive-type impurity ions into the substrate; forming a nitride layer on the first oxide layer; forming a second conductive-type well by diffusing the second conductive-type impurity ions while forming a second oxide layer; removing the nitride layer, the second oxide layer, and portions of the first oxide layer; forming first conductive-type source areas at sides of the gate electrode(s); forming a dielectric layer on the oxide layer; forming a trench in the dielectric layer and the oxide layer; forming a source contact in the trench; and forming a drain.

Abstract: A method for cleaning a wafer by removing residues from the surface of a wafer where metals are reacted to form compounds. The cleaning method may include first residue from predetermined areas of the wafer (e.g., uppermost surface of the gate electrode and/or source/drain regions where suicides are formed) using at least one selected from a sulfuric acid cleaning solution, a first mixed cleaning solution and a second mixed cleaning solution, then removing oxide films from the predetermined areas using a diluted hydrofluoric acid cleaning solution, and then removing a second residue derived from the removal of the oxide films using the first mixed cleaning solution. Accordingly, the method efficiently removes the first and second residues left on the surfaces of the predetermined areas.