Patents by Inventor Sang-Shin Kim
Sang-Shin Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250075307Abstract: The disclosure relates to a mask assembly and a method of manufacturing the mask assembly. A mask assembly includes a frame including a frame opening, and an open mask including cell openings overlapping the frame opening. The open mask further includes support portions overlapping remaining cell openings except a first cell opening among the cell openings.Type: ApplicationFiled: July 16, 2024Publication date: March 6, 2025Applicant: Samsung Display Co., LTD.Inventors: Seung Jin LEE, Yeon Ju KANG, Sang Hoon KIM, Sang Shin LEE, Min Ji JANG
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Patent number: 12240291Abstract: An embodiment integrated thermal management system for a vehicle includes a main refrigerant line configured to circulate a refrigerant sequentially through a compressor, an inner condenser, an outdoor heat exchanger, and an evaporator, an integrated chiller configured to perform heat exchange between a first coolant flowing through a battery, a second coolant flowing through an electronic component, and the refrigerant, a gas injection refrigerant line branched from a downstream point of the inner condenser of the main refrigerant line based on a flow direction of the refrigerant and connected to the compressor, and a gas injection heat exchanger configured to perform heat exchange between the refrigerant flowing through the gas injection refrigerant line and the refrigerant flowing through the main refrigerant line.Type: GrantFiled: November 8, 2022Date of Patent: March 4, 2025Assignees: Hyundai Motor Company, Kia CorporationInventors: Sang Shin Lee, Jong Won Kim
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Publication number: 20250065693Abstract: A vehicle thermal management circuit includes a refrigerant line configured to cause refrigerant to flow in the order of a compressor, an indoor condenser and an outdoor heat exchanger of an indoor air-conditioning apparatus, a battery cooling line configured to circulate cooling water between a battery and a battery radiator or between the battery and a chiller unit, an electric part cooling line configured to circulate cooling water between an electronic driving unit and an electric part radiator or between the driving unit and the chiller, and an accumulation unit located at an upstream point of the compressor on the refrigerant line, includes an expansion valve and a refrigerant heater, and is configured to receive the refrigerant discharged from the chiller or the evaporator and provide the received refrigerant to the compressor or to expand or heat the refrigerant and provides the expanded or heated refrigerant to the compressor.Type: ApplicationFiled: September 9, 2024Publication date: February 27, 2025Inventors: Uk Il Yang, Man Ju Oh, Ki Mok Kim, Sang Shin Lee
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Patent number: 12227320Abstract: A storage station for unmanned vertical take-off and landing (VTOL) aircrafts includes a storage case (110) for accommodating an unmanned VTOL aircraft therein, a first coupling member (120) having one end pivotably coupled to an inner upper surface of the storage case and the other end protruding out of the storage case by a pivoting operation, and a second coupling member (130) provided at the other end of the first coupling member, in which one end of a main body of the unmanned VTOL aircraft is coupled to the second coupling member, and the second coupling member is rotatable about a rotation axis in a longitudinal direction of the first coupling member, whereby it is possible to provide an advantageous effect of simultaneously storing and charging multiple drones on sides, and it is particularly possible to provide an advantageous effect of charging and storing a large number of drones used in swarm flight technology, which has recently become increasingly useful.Type: GrantFiled: June 2, 2023Date of Patent: February 18, 2025Assignee: Korea Aerospace Research InstituteInventors: Sang Cherl Lee, Myeong Shin Lee, Jung Hyun Lee, Hee Seob Kim
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Publication number: 20250051811Abstract: The present application relates to a method for preparing amino acid granules from a fermentation broth, wherein the prepared amino acid granules contain no cells.Type: ApplicationFiled: December 26, 2022Publication date: February 13, 2025Applicant: CJ CHEILJEDANG CORPORATIONInventors: Min Kyung KWON, Jihyun SHIN, Jong Hyun KIM, Sang Min PARK, Ji-hun KANG, Min Sup KIM
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Patent number: 12218002Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.Type: GrantFiled: December 13, 2023Date of Patent: February 4, 2025Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Jin Kang, Jong Min Baek, Woo Kyung You, Kyu-Hee Han, Han Seong Kim, Jang Ho Lee, Sang Shin Jang
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Patent number: 9187672Abstract: A hard coating film may include a cured product of a polyester polyol modified hyperbranched (meth)acrylate represented by Formula 1:Type: GrantFiled: November 9, 2012Date of Patent: November 17, 2015Assignee: CHEIL INDUSTRIES, INC.Inventors: Sang Shin Kim, Dong Yoon Shin, Hae Ryong Chung
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Patent number: 8936834Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.Type: GrantFiled: July 3, 2013Date of Patent: January 20, 2015Assignee: Poongsan Microtec CorporationInventors: Sang-Shin Kim, Manuel Scott Rivera, Suk-Dong Hong
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Publication number: 20130302916Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.Type: ApplicationFiled: July 3, 2013Publication date: November 14, 2013Inventors: Sang-Shin Kim, Manuel Scott Rivera, Suk-Dong Hong
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Patent number: 8481123Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.Type: GrantFiled: February 4, 2009Date of Patent: July 9, 2013Assignee: Poongsan Microtec CorporationInventors: Sang-Shin Kim, Manuel Scott Rivera, Suk-Dong Hong
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Publication number: 20130120838Abstract: A hard coating film may include a cured product of a polyester polyol modified hyperbranched (meth)acrylate represented by Formula 1:Type: ApplicationFiled: November 9, 2012Publication date: May 16, 2013Inventors: Sang Shin KIM, Dong Yoon SHIN, Hae Ryong CHUNG
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Publication number: 20090148965Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.Type: ApplicationFiled: February 4, 2009Publication date: June 11, 2009Applicant: POONGSAN MICROTEC CORPORATIONInventors: Sang-Shin Kim, Manuel Scott Rivera, Suk-Dong Hong
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Publication number: 20070187386Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.Type: ApplicationFiled: February 10, 2006Publication date: August 16, 2007Applicant: POONGSAN MICROTEC CORPORATIONInventors: Sang-Shin Kim, Manuel Rivera, Suk-Dong Hong