Patents by Inventor Sang-Sie Yoon

Sang-Sie Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device and method for operating the same
    Patent number: 8238186
    Abstract: A semiconductor memory device is capable of performing a stable high-speed operation while inputting/outputting data. The semiconductor memory device includes an inversion output circuit configured to output a clocking pattern in a clocking mode, and an inversion pin to which the inversion output circuit is connected.
    Type: Grant
    Filed: November 5, 2009
    Date of Patent: August 7, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Ji-Hyae Bae, Sang-Sie Yoon
  • Circuit for generating data strobe signal and method
    Patent number: 8009492
    Abstract: A circuit for generating a data strobe signal includes: a control signal generation unit configured to generate a strobe control signal defining an activation time period where a first data strobe signal and a second data strobe signal, which is an inverted signal of the first data strobe signal, are toggled; and a strobe signal output unit configured to output the first and second data strobe signals as a final strobe signal in the activation time period where the strobe control signal is activated.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: August 30, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Choung-Ki Song, Sang-Sie Yoon
  • CIRCUIT FOR GENERATING DATA STROBE SIGNAL AND METHOD
    Publication number: 20110002180
    Abstract: A circuit for generating a data strobe signal includes: a control signal generation unit configured to generate a strobe control signal defining an activation time period where a first data strobe signal and a second data strobe signal, which is an inverted signal of the first data strobe signal, are toggled; and a strobe signal output unit configured to output the first and second data strobe signals as a final strobe signal in the activation time period where the strobe control signal is activated.
    Type: Application
    Filed: November 9, 2009
    Publication date: January 6, 2011
    Inventors: Choung-Ki SONG, Sang-Sie Yoon
  • SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
    Publication number: 20100118635
    Abstract: A semiconductor memory device is capable of performing a stable high-speed operation while inputting/outputting data. The semiconductor memory device includes an inversion output circuit configured to output a clocking pattern in a clocking mode, and an inversion pin to which the inversion output circuit is connected.
    Type: Application
    Filed: November 5, 2009
    Publication date: May 13, 2010
    Inventors: Ji-Hyae BAE, Sang-Sie Yoon