Patents by Inventor Sang Soo Yoon

Sang Soo Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
    Patent number: 6803260
    Abstract: Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
    Type: Grant
    Filed: October 18, 2002
    Date of Patent: October 12, 2004
    Assignee: LG Electronics Inc.
    Inventors: Jin Koog Shin, Kyu Tae Kim, Min Jae Jung, Sang Soo Yoon, Young Soo Han, Jae Eun Lee
  • METHOD OF HORIZONTALLY GROWING CARBON NANOTUBES AND FIELD EFFECT TRANSISTOR USING THE CARBON NANOTUBES GROWN BY THE METHOD
    Publication number: 20040164327
    Abstract: Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
    Type: Application
    Filed: October 18, 2002
    Publication date: August 26, 2004
    Applicant: LG Electronics, Inc.
    Inventors: Jin Koog Shin, Kyu Tae Kim, Min Jae Jung, Sang Soo Yoon, Young Soo Han, Jae Eun Lee
  • Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
    Patent number: 6515339
    Abstract: Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
    Type: Grant
    Filed: July 18, 2001
    Date of Patent: February 4, 2003
    Assignee: LG Electronics Inc.
    Inventors: Jin Koog Shin, Kyu Tae Kim, Min Jae Jung, Sang Soo Yoon, Young Soo Han, Jae Eun Lee
  • Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
    Publication number: 20020014667
    Abstract: Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
    Type: Application
    Filed: July 18, 2001
    Publication date: February 7, 2002
    Inventors: Jin Koog Shin, Kyu Tae Kim, Min Jae Jung, Sang Soo Yoon, Young Soo Han, Jae Eun Lee