Patents by Inventor Sang T Nguyen
Sang T Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240128978Abstract: A matrix multiplication and addition (MAC) operating system is described where different cell currents flowing through different cells in a matrix for different PWM time intervals can be integrated and converted into a numeric value for the cumulative charge. The numeric value of the cumulative charge computed by the ADC is equivalent to MAC operations over multiplicity of cells. The operation is inherently error prone due to parasitic coupling effects from the switching of the memory cells in the array. The presented system minimizes the errors due to parasitic coupling through memory array.Type: ApplicationFiled: August 30, 2023Publication date: April 18, 2024Inventors: Vishal Sarin, Biprangshu Saha, Sankha Saha, Vikram Kowshik, Sang T. Nguyen
-
Publication number: 20240128979Abstract: In one aspect, an analog to digital converter (ADC) for a multiply-accumulator (MAC) system comprising: an ADC control that receives a VREF and generates a plurality of timing signals to an ADC, and wherein the plurality of timing signals comprises an S1 signal, an S3 signal, an S4 signal, an ECO signal, a CLOCK signal, and a COUNTER<N:0> signal; the ADC that comprises: a pre-charge system comprising a sense capacitor that stores an integrated charge IMAC over a time T and develops voltage VMAC, and wherein the S1 signal defines the pre-charge phase of the sense capacitor.Type: ApplicationFiled: August 7, 2023Publication date: April 18, 2024Inventors: vishal sarin, Biprangshu Saha, Sankha Saha, Vikram Kowshik, Sang T. Nguyen, Siraj Fulum Mossa
-
Patent number: 8456904Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: GrantFiled: June 29, 2011Date of Patent: June 4, 2013Assignee: Silicon Storage Technology, Inc.Inventors: Hieu Van Tran, Sang T. Nguyen, Anh Ly, Hung Q. Nguyen
-
Patent number: 8300494Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: GrantFiled: December 28, 2010Date of Patent: October 30, 2012Assignee: Silicon Storage Technology, Inc.Inventors: Hieu Van Tran, Sang T. Nguyen, Anh Ly, Hung Q. Nguyen
-
Publication number: 20110255346Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: ApplicationFiled: June 29, 2011Publication date: October 20, 2011Applicant: Microchip Technology, Inc.Inventors: Hieu Van Tran, Sang T. Nguyen, Anh Ly, Hung Q. Nguyen
-
Patent number: 7990773Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: GrantFiled: November 20, 2009Date of Patent: August 2, 2011Assignee: Silicon Storage Technology, Inc.Inventors: Hieu Van Tran, Sang T. Nguyen, Anh Ly, Hung Q. Nguyen
-
Publication number: 20110090743Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: ApplicationFiled: December 28, 2010Publication date: April 21, 2011Inventors: Hieu Van Tran, Sang T. Nguyen, Anh Ly, Hung Q. Nguyen
-
Patent number: 7697365Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: GrantFiled: July 13, 2007Date of Patent: April 13, 2010Assignee: Silicon Storage Technology, Inc.Inventors: Hieu Van Tran, Sang T Nguyen, Anh Ly, Hung Q. Nguyen
-
Publication number: 20100067308Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: ApplicationFiled: November 20, 2009Publication date: March 18, 2010Applicant: Silicon Storage Technology, Inc.Inventors: Hieu Van Tran, Sang T. Nguyen, Anh Ly, Hung Q. Nguyen
-
Publication number: 20090016106Abstract: Various circuits include MOS transistors that have a bulk voltage terminal for receiving a bulk voltage that is different from a supply voltage and ground. The bulk voltage may be selectively set so that some MOS transistors have a bulk voltage set to the supply voltage or ground and other MOS transistors have a bulk voltage that is different. The bulk voltage may be set to forward or reverse bias pn junctions in the MOS transistor. The various circuits include comparators, operational amplifiers, sensing circuits, decoding circuits and the other circuits. The circuits may be included in a memory system.Type: ApplicationFiled: July 13, 2007Publication date: January 15, 2009Applicant: SILICON STORAGE TECHNOLOGY, INC.Inventors: Hieu Van TRAN, Sang T. NGUYEN, Anh LY, Hung Q. NGUYEN