Abstract: A turbine wheel for a turbine charger includes a hub and a set of wheel blades configured to be arranged around the hub. A wheel blade has a section structure of an air-foil which has a pressure side and a suction side. The turbine wheel is capable of remarkably increasing an output of a vehicle engine by increasing a rotation power of the turbine wheel to increase a compression rate of sucked air.

Abstract: A method for forming an ultra fine contact hole includes: forming a KrF photoresist pattern on a semiconductor substrate providing an insulation layer, the KrF photoresist pattern exposing a predetermined region for forming a contact hole on the insulation layer; forming a chemically swelling process (CSP) chemical material-containing layer being reactive to the KrF photoresist pattern on an entire surface of the semiconductor substrate; forming a chemical material-containing pattern encompassing the KrF photoresist pattern by reacting the chemical material-containing layer with the KrF photoresist pattern through a chemically swelling process to decrease a critical dimension of the contact hole; rinsing the semiconductor substrate; and increasing a thickness of a sidewall of the chemical material-containing pattern to a predetermined thickness by performing a resist flow process (RFP) that makes the chemical material-containing pattern flowed to decrease the critical dimension (CD) of the contact hole.

Abstract: A method for forming an ultra fine contact hole includes: forming a KrF photoresist pattern on a semiconductor substrate providing an insulation layer, the KrF photoresist pattern exposing a predetermined region for forming a contact hole on the insulation layer; forming a chemically swelling process (CSP) chemical material-containing layer being reactive to the KrF photoresist pattern on an entire surface of the semiconductor substrate; forming a chemical material-containing pattern encompassing the KrF photoresist pattern by reacting the chemical material-containing layer with the KrF photoresist pattern through a chemically swelling process to decrease a critical dimension of the contact hole; rinsing the semiconductor substrate; and increasing a thickness of a sidewall of the chemical material-containing pattern to a predetermined thickness by performing a resist flow process (RFP) that makes the chemical material-containing pattern flowed to decrease the critical dimension (CD) of the contact hole.

Abstract: A method for forming a storage node using photoresist is described. The method can form a storage node pattern in a rectangular shape which allows for deep etching because it has a smaller slope than a conventional elliptical pattern by employing a double exposure method which firstly forms a portion corresponding to the major axis of the storage node using a negative photoresist and secondly forms a portion corresponding to the minor axis of the storage node using a positive photoresist.

Abstract: Disclosed is a method for manufacturing a semiconductor device, wherein a reticle that can expose only a portion where the pattern is changed on an edge area of a wafer is manufactured, and then a double exposure process is performed by using the reticle, whereby all of the photoresist on the part where the pattern is changed is removed. There are advantages that the yield of the semiconductor device is enhanced, and the electrical properties thereof are improved.

Abstract: A method for manufacturing a phase shift mask includes the steps of forming a shift layer, a metal layer and a photoresist layer on a substrate subsequently, patterning the photoresist layer into a predetermined configuration, thereby obtaining a first, a second, a third and a fourth photoresist patterns, forming a chemical swelling process (CSP) chemical layer on the photoresist patterns and an exposed portion of the substrate, patterning the CSP chemical layer using masks over the first and the fourth photoresist patterns, whereby the CSP chemical layer on the first and the fourth photoresist patterns remains thereon, patterning an exposed portion of the metal layer into the predetermined configuration using the second and the third photoresist patterns as masks, patterning the exposed portions of the shift layer into the predetermined configuration, and removing the first and fourth photoresist patterns.

Abstract: A method for manufacturing a phase shift mask includes the steps of forming a shift layer, a metal layer and a photoresist layer on a substrate subsequently, patterning the photoresist layer into a predetermined configuration, thereby obtaining a first, a second, a third and a fourth photoresist patterns, forming a chemical swelling process (CSP) chemical layer on the photoresist patterns and an exposed portion of the substrate, patterning the CSP chemical layer using masks over the first and the fourth photoresist patterns, whereby the CSP chemical layer on the first and the fourth photoresist patterns remains thereon, patterning an exposed portion of the metal layer into the predetermined configuration using the second and the third photoresist patterns as masks, patterning the exposed portions of the shift layer into the predetermined configuration, and removing the first and fourth photoresist patterns.

Abstract: A composite decoding device for an MPEG-2 multichannel audio decoder. The composite decoding device is capable of simultaneously decoding information coded in a dynamic crosstalk coding manner and information coded in a phantom coding manner. To this end, the composite decoding device comprises an arithmetic unit for receiving a control word, information and a scale factor from a first-in-first-out memory, performing an arithmetic operation with respect to the received information and scale factor on the basis of a dynamic crosstalk coding manner or a phantom coding manner determined by the received control word and outputting the arithmetic result to a dual port memory, and a controller for generating a plurality of sequential control signals in response to the control word from the first-in-first-out memory to control the arithmetic unit.