Abstract: A method of forming a pre-metal dielectric (PMD) layer of a semiconductor device using a chemical mechanical polishing (CMP) process which can be suitable for easily recognizing an alignment key. Such a method can reduce or otherwise eliminate alignment key erosion due to CMP by previously forming an alignment key pattern of polysilicon in an active region of a semiconductor scribe lane.

Abstract: An image sensor and a method of manufacturing the same that includes providing a semiconductor substrate having a photodiode, forming a color filter over the photodiode, forming a micro lens over the color filter and then forming at least one metal layer vertically extending through the microlens at an outer edge thereof.

Abstract: A complementary metal oxide silicon (CMOS) image sensor and a method for fabricating the same. In one example embodiment, a CMOS image sensor includes a substrate, a first dielectric film, a plurality of metal patterns, a second dielectric film, a plurality of via holes, a plurality of metal wires, a plurality of silicon oxide films, a plurality of trenches, and a plurality of photo diodes. The first dielectric film is formed on the substrate. The metal patterns are formed on the first dielectric film. The second dielectric film is formed on the first dielectric film and on the metal patterns. The via holes are formed through the second dielectric film. The metal wires are each formed in one of the via holes. The silicon oxide films are formed on the second dielectric film. The trenches are formed between the silicon oxide films. The photo diodes are formed in the trenches.

Abstract: An image sensor and a method of manufacturing the same that includes providing a semiconductor substrate having a photodiode, forming a color filter over the photodiode, forming a micro lens over the color filter and then forming at least one metal layer vertically extending through the microlens at an outer edge thereof.

Abstract: A slurry supply unit for a CMP apparatus is disclosed. The slurry supply unit includes a slurry flow sensor in a slurry injection pipe to measure the flow of the injected slurry, an auxiliary pump engaged with a slurry distribution line to discharge the slurry at a predetermined flow, and a slurry flow control section regulating the flow of the discharged slurry by controlling the auxiliary pump if the flow of the slurry as measured by the slurry flow sensor deviates from a preset reference. Here, the slurry supply unit may be used in a CMP apparatus including a slurry supply tank; a slurry circulation line connected to the slurry supply tank; a main pump circulating the slurry in the slurry circulation line; a CMP unit; and a slurry distribution line from the slurry circulation line to the slurry injection pipe of the CMP unit. If a planarization process of a semiconductor wafer is performed using the slurry supply unit, the amount of the slurry supplied to the apparatus can be controlled more precisely.

Abstract: A method for fabricating a CMOS image sensor according to an embodiment includes: forming an interlayer dielectric layer over a metal wiring on a semiconductor substrate; forming a capping layer on the interlayer dielectric layer; forming a hard mask layer on the capping layer; forming a contact hole by selectively removing the hard mask layer, the capping layer, and the interlayer dielectric layer so that predetermined portions of the metal wiring and the surface of the semiconductor substrate are exposed; and forming a tungsten plug inside the contact hole by depositing a tungsten film over the contact hole and the semiconductor substrate and performing a CMP process.

Abstract: A method of forming a pre-metal dielectric (PMD) layer of a semiconductor device using a chemical mechanical polishing (CMP) process which can be suitable for easily recognizing an alignment key. Such a method can reduce or otherwise eliminate alignment key erosion due to CMP by previously forming an alignment key pattern of polysilicon in an active region of a semiconductor scribe lane.