Abstract: A mask, and a method for fabricating the mask, for optically transcribing a pattern corresponding to integrated circuits on a semiconductor substrate by using an exposure device. The mask has a plurality of features corresponding to circuit elements with at least one recessed corner defined by two edges. The mask includes a plurality of proximity correcting auxiliary features, each having two extension parts which extend in parallel along and spaced away from each of two edges defining a recessed corner. The extension parts are bent at a same angle corresponding to the recessed corner, to be connected to each other. The proximity correcting auxiliary features have polygonal shapes having predetermined widths. Since polygonal auxiliary features are provided corresponding to the recessed corner, auxiliary features are symmetrically maintained, reducing a number of auxiliary features. The amount of data representing the whole mask pattern can thus be reduced.

Abstract: A mask, and a method for fabricating the mask, for optically transcribing a pattern corresponding to integrated circuits on a semiconductor substrate by using an exposure device. The mask has a plurality of features corresponding to circuit elements with at least one recessed corner defined by two edges. The mask includes a plurality of proximity correcting auxiliary features, each having two extension parts which extend in parallel along and spaced away from each of two edges defining a recessed corner. The extension parts are bent at a same angle corresponding to the recessed corner, to be connected to each other. The proximity correcting auxiliary features have polygonal shapes having predetermined widths. Since polygonal auxiliary features are provided corresponding to the recessed corner, auxiliary features are symmetrically maintained, reducing a number of auxiliary features. The amount of data representing the whole mask pattern can thus be reduced.