Abstract: Disclosed is an analgesic composition including an opioid analgesic and a therapeutically effective amount of P7C3, and the present analgesic composition may treat acute and facilitated pain very effectively, and has a significantly high synergistic effect compared to the effect by administration of individual drugs.

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off.

Abstract: Disclosed is an analgesic composition including an opioid analgesic and a therapeutically effective amount of P7C3, and the present analgesic composition may treat acute and facilitated pain very effectively, and has a significantly high synergistic effect compared to the effect by administration of individual drugs.

Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off.

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract: A wavelength tunable laser light source necessary for a Wavelength Division Multiplexing (WDM)-based optical communication system, and more particularly, a wavelength tunable laser light source for maintaining a stable wavelength without a wavelength locker is provided. The wavelength tunable laser includes an optical fiber and a semiconductor device. The optical fiber can implement multiple reflection peaks. The semiconductor device includes a mode size converter section, a gain section and a DBR mirror section. One facet of the semiconductor device, which is adjacent to the optical fiber, has an antireflection coating layer. Therefore, the wavelength tunable laser based on an optical fiber containing multiple reflection peaks can maintain excellent wavelength stability insensitive to current injection, temperature, and environments without a wavelength locker.

Abstract: A laser resonator is implemented by using the −1-st order reflection peaks of a sampled grating so that the multi-wavelength single mode light source array can be manufactured easily and economically. A multi-wavelength semiconductor laser array comprises a substrate; a plurality of laser stripes arranged with a predetermined space on the substrate, each being divided into two sections; a multiplicity of asymmetric sampled gratings distributed with sampling periods different from each other on the bottom of each active layer; and a number of effective refractive index changing layers, each arranged on one section of each laser stripe to make the Bragg wavelengths different at the two sections.

Abstract: A wavelength tunable laser light source necessary for a Wavelength Division Multiplexing (WDM)-based optical communication system, and more particularly, a wavelength tunable laser light source for maintaining a stable wavelength without a wavelength locker is provided. The wavelength tunable laser includes an optical fiber and a semiconductor device. The optical fiber can implement multiple reflection peaks. The semiconductor device includes a mode size converter section, a gain section and a DBR mirror section. One facet of the semiconductor device, which is adjacent to the optical fiber, has an antireflection coating layer. Therefore, the wavelength tunable laser based on an optical fiber containing multiple reflection peaks can maintain excellent wavelength stability insensitive to current injection, temperature, and environments without a wavelength locker.

Abstract: A laser resonator is implemented by using the −1-st order reflection peaks of a sampled grating so that the multi-wavelength single mode light source array can be manufactured easily and economically. A multi-wavelength semiconductor laser array comprises a substrate; a plurality of laser stripes arranged with a predetermined space on the substrate, each being divided into two sections; a multiplicity of asymmetric sampled gratings distributed with sampling periods different from each other on the bottom of each active layer; and a number of effective refractive index changing layers, each arranged on one section of each laser stripe to make the Bragg wavelengths different at the two sections.

Abstract: A spot-size converter integrated optical device and method for manufacturing the same readily fabricates and optimizes a laser and a spot-size converter region. The optical device includes: a first waveguide; and a second waveguide basically having a planar buried-heterostructure active layer and a spot-size converter region of ridge form where optical mode expands for better power coupling to an optical fiber, wherein the spot-size converter region is formed by tapering the width of the active layer.