Abstract: Provided is a semiconductor device. A semiconductor chip is disposed on a substrate. A first magnetic substance, a second magnetic substance and a third magnetic substance which are spaced apart from one another are formed on the semiconductor chip. The first magnetic substance and the second magnetic substance can be adjacent an edge of the semiconductor chip. The third magnetic substance can be adjacent a center of the semiconductor chip. The third magnetic substance is between the first magnetic substance and the second magnetic substance.

Abstract: Provided is a method of fabricating a semiconductor device. In one embodiment, the method includes forming at least one unit device in a substrate and on a front side of the substrate, forming a through-silicon via (TSV) structure apart from the at least one unit device to substantially vertically penetrate the substrate, the TSV structure having a back end including a concave portion, forming an internal circuit on the front side of the substrate and a front end of the TSV structure to be electrically connected to the at least one unit device and the front end of the TSV structure, forming a front side bump on the front side of the substrate to be electrically connected to the front end of the TSV structure, forming a redistribution layer on a back side of the substrate to be electrically connected to the back end of the TSV structure, and forming a back side bump to be electrically connected to the redistribution layer.

Abstract: A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device by using the wafer processing method are provided. The wafer processing method includes: disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein a surface of the first magnetic material and a surface of the second magnetic material, which face each other, have opposite polarities; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.

Abstract: Provided is a semiconductor device. A semiconductor chip is disposed on a substrate. A first magnetic substance, a second magnetic substance and a third magnetic substance which are spaced apart from one another are formed on the semiconductor chip. The first magnetic substance and the second magnetic substance can be adjacent an edge of the semiconductor chip. The third magnetic substance can be adjacent a center of the semiconductor chip. The third magnetic substance is between the first magnetic substance and the second magnetic substance.

Abstract: A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device by using the wafer processing method are provided. The wafer processing method includes: disposing a first magnetic material on a front side of a wafer and disposing a second magnetic material on a carrier wafer, wherein a surface of the first magnetic material and a surface of the second magnetic material, which face each other, have opposite polarities; aligning and bonding the wafer to the carrier wafer by magnetic attraction between the first magnetic material and the second magnetic material; grinding a back side of the wafer to make the wafer thin; and separating the wafer from the carrier wafer.

Abstract: Provided is a method of fabricating a semiconductor device. In one embodiment, the method includes forming at least one unit device in a substrate and on a front side of the substrate, forming a through-silicon via (TSV) structure apart from the at least one unit device to substantially vertically penetrate the substrate, the TSV structure having a back end including a concave portion, forming an internal circuit on the front side of the substrate and a front end of the TSV structure to be electrically connected to the at least one unit device and the front end of the TSV structure, forming a front side bump on the front side of the substrate to be electrically connected to the front end of the TSV structure, forming a redistribution layer on a back side of the substrate to be electrically connected to the back end of the TSV structure, and forming a back side bump to be electrically connected to the redistribution layer.

Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.

Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.