Abstract: A sterilization apparatus includes a housing; a sterilization unit for irradiating, with sterilization light, at least one region to be sterilized; and a driving unit for moving the sterilization unit into and out of the housing via an opening of the housing and rotating the sterilization unit about a rotation axis.

Abstract: The present disclosure relates to a secondary battery manufacturing system having a multi-packaging unit, in which multiple packaging units of a secondary battery manufacturing facility are provided and a transfer box on which an electrode assembly is accommodated is transferred to each packaging unit by a transfer unit, wherein the secondary battery manufacturing system includes: an electrode supply unit equipped with a plurality of stacking devices for supplying an electrode assembly in which a plurality of battery cells are stacked; a tab-welding unit; at least one packaging unit; at least one temporary buffer; and a transfer unit.

Abstract: The present disclosure relates to a secondary battery manufacturing system in which a packaging unit of a secondary battery manufacturing facility are configured to have multiple packaging units, and having a multipackaging unit such that a transfer box in which an electrode assembly is seated is transferred to each of the packaging units by a transfer unit, and including an electrode supply unit having a plurality of stacking devices supplying an electrode assembly in which a plurality of battery cells are stacked, a tab welding unit, at least one packaging unit, at least one temporary buffer, and a transfer unit.

Abstract: The present disclosure relates to a method and device for controlling a Downlink Data Notification (DDN) message, which can reduce the DDN messages that occur while a user equipment transits from an active (ECM-active) state to an inactive (ECM-idle) state. During a bearer activation procedure according to a request from a user equipment, the DDN message control apparatus of the present disclosure sets a DDN flag value to a predetermined value when uplink data is received. When a DDN message is received from outside, the apparatus identifies the DDN flag value and stores the DDN message in case that the DDN flag value is identical with the predetermined value.

Abstract: The present disclosure relates to a method and device for controlling a Downlink Data Notification (DDN) message, which can reduce the DDN messages that occur while a user equipment transits from an active (ECM-active) state to an inactive (ECM-idle) state. During a bearer activation procedure according to a request from a user equipment, the DDN message control apparatus of the present disclosure sets a DDN flag value to a predetermined value when uplink data is received. When a DDN message is received from outside, the apparatus identifies the DDN flag value and stores the DDN message in case that the DDN flag value is identical with the predetermined value.

Abstract: In a silicon substrate having a contact hole in a device region, the contact resistance between the contact plug and the silicon substrate is reduced by preventing formation of an undesirable layer therebetween by treating the exposed surface of the substrate before forming the contact plug. Further, a two-layered contact plug consisting of a first contact plug layer having high impurity concentration and a second contact plug layer having low impurity concentration, on the interlayer insulating film including the exposed surface of the substrate. The interface between the silicon substrate and the contact plug is thermally treated at low temperature, and the first contact plug layer having high impurity concentration and the second contact plug layer having low impurity concentration, are formed, so that the resistance between the silicon substrate and the contact plug can be reduced, thereby increasing the operation speed of the device. thereby increasing the operation speed of the device.

Abstract: The present invention relates to a method for fabricating a semiconductor device, which comprises the steps of: forming a device isolation film defining a device region in a silicon substrate; depositing a conductive layer on the substrate and patterning the deposited conductive layer so as to form a gate electrode on the substrate; implanting impurity ions into the substrate so as to form junction regions in the substrate; forming an interlayer insulating film on the substrate and selectively patterning the interlayer insulating film so as to partially expose the surface of the substrate; treating the exposed surface of the substrate; and forming a two-layered contact plug consisting of a first contact plug layer having high impurity concentration and a second contact plug layer having low impurity concentration, on the interlayer insulating film including the exposed surface of the substrate.