Abstract: An ultrasonic probe that uses the magnetostrictive effect to generate and detect a surface-coupled guided wave for the purpose of inspecting a thick-walled structure for surface defects. A transmitter sensor and a receiver sensor are especially designed to generate and detect short wavelengths that will couple to only one surface of the plate.

Abstract: The asymmetrical non-volatile memory cell is provided on a substrate of first conductivity type and comprises a control region and a floating region, wherein the control region is adjacent to the floating region and isolated from the floating region. The control region further comprises an implant region, having second conductivity type, disposed entirely across the control region and a polycrystalline silicon control gate disposed entirely over the implant region. The floating region further comprises a first voltage state of a drain implant region and a second voltage state of a source implant region, both having second conductivity type, the first voltage state is different from the second voltage state, a channel region that separates the drain implant region and the source implant region, and a polycrystalline silicon floating gate disposed entirely over the channel region and at least partially over the source implant region and drain implant region.

Abstract: An ultrasonic probe that uses the magnetostrictive effect to generate and detect a surface-coupled guided wave for the purpose of inspecting a thick-walled structure for surface defects. A transmitter probe and a receiver probe are especially designed to generate and detect short wavelengths that will couple to only one surface of the plate.

Abstract: Method and apparatus for image data compression that greatly reduces implementational complexity and cost, and improves error correction. These improvements are achieved at various implementational blocks which include a color extraction unit that can perform a first level of compression by reducing the frame size by, e.g., ¼ or {fraction (1/16)}. This is followed by compression through division by a programmable loss value where the division propagates the remainder to improve image quality. Differential coded modulation is then performed on the extracted color values to further reduce image data size. The result is variable length encoded using preferably a 1's complement approach that further reduces implementational complexity by eliminating VL coding tables. Finally, the VL encoded compressed data is packetized for transmission over a serial bus where the packetization improves error correction.

Abstract: A MOSFET having a nonuniform doping channel and a method for fabricating the same.The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and its surroundings, the gate electrode having a portion longer than any other portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.

Abstract: A method for fabricating contacts of a semiconductor device capable of achieving a reduced contact resistance by using a material, such as TiSi.sub.2, exhibiting a low potential barrier to a N.sup.+ diffusion layer for a contact for the N.sup.+ diffusion layer and a material, such as PtSi, exhibiting a low potential barrier to a P.sup.+ diffusion layer for a contact for the P.sup.+ diffusion layer and performing two independent masking works respectively for the N.sup.+ diffusion layer and the P.sup.+ diffusion layer.

Abstract: An MOSFET having a nonuniform doping channel and a method for fabricating the same.The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and surroundings, the gate electrode having a portion longer than any other than portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.