Patents by Inventor Sang Yeob Song
Sang Yeob Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10038127Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: April 21, 2017Date of Patent: July 31, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in Yang, Tae-hyung Kim, Si-hyuk Lee, Sang-yeob Song, Cheol-soo Sone, Hak-hwan Kim, Jin-hyun Lee
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Publication number: 20170229626Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: April 21, 2017Publication date: August 10, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in YANG, Tae-hyung KIM, Si-hyuk LEE, Sang-yeob SONG, Cheol-soo SONE, Hak-hwan KIM, Jin-hyun LEE
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Patent number: 9705040Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.Type: GrantFiled: November 12, 2015Date of Patent: July 11, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-hoon Ha, Sang-yeob Song, Gi-bum Kim, Jae-in Sim, Seung-woo Choi
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Patent number: 9660163Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: June 10, 2015Date of Patent: May 23, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-in Yang, Tae-hyung Kim, Si-hyuk Lee, Sang-yeob Song, Cheol-soo Sone, Hak-hwan Kim, Jin-hyun Lee
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Patent number: 9570660Abstract: Provided is a semiconductor light emitting device.Type: GrantFiled: July 15, 2015Date of Patent: February 14, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae In Sim, Sang Yeob Song, Jong Hoon Ha, Gi Bum Kim, Seung Woo Choi
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Patent number: 9548426Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.Type: GrantFiled: May 22, 2015Date of Patent: January 17, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myeong Ha Kim, Chan Mook Lim, Masaaki Sofue, Sang Yeob Song, Mi Jeong Yun
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Publication number: 20170005242Abstract: A semiconductor light emitting device may include a substrate having a first surface and a second surface, the second surface being opposite to the first surface; a light emitting structure disposed on the first surface of the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a reflector disposed on the second surface of the substrate and including a low refractive index layer and a Bragg layer, wherein the Bragg layer includes a plurality of alternately stacked layers having different refractive indices, and wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.Type: ApplicationFiled: April 26, 2016Publication date: January 5, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myeong Ha KIM, Sang Yeob SONG, Chan Mook LIM
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Publication number: 20160149086Abstract: Provided is a semiconductor light emitting device.Type: ApplicationFiled: July 15, 2015Publication date: May 26, 2016Inventors: Jae In SIM, Sang Yeob SONG, Jong Hoon HA, Gi Bum KIM, Seung Woo CHOI
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Publication number: 20160141457Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.Type: ApplicationFiled: November 12, 2015Publication date: May 19, 2016Inventors: Jong-hoon HA, Sang-yeob SONG, Gi-bum KIM, Jae-in SIM, Seung-woo CHOI
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Patent number: 9312249Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure.Type: GrantFiled: July 22, 2014Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae . Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song
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Patent number: 9305906Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure.Type: GrantFiled: July 21, 2014Date of Patent: April 5, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song
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Publication number: 20160087159Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.Type: ApplicationFiled: May 22, 2015Publication date: March 24, 2016Inventors: Myeong Ha KIM, Chan Mook LIM, Masaaki SOFUE, Sang Yeob SONG, Mi Jeong YUN
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Patent number: 9293675Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: January 9, 2015Date of Patent: March 22, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20160072004Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer.Type: ApplicationFiled: May 15, 2015Publication date: March 10, 2016Inventors: Sang Yeob SONG, Ju Heon YOON, Gi Bum KIM, Hyun Young KIM, Jong Hoon HA
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Patent number: 9263652Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.Type: GrantFiled: January 14, 2014Date of Patent: February 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju-heon Yoon, Gi-bum Kim, Sang-yeon Kim, Sang-yeob Song, Won-goo Hur
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Publication number: 20150364652Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: June 10, 2015Publication date: December 17, 2015Inventors: Jong-in YANG, Tae-hyung KIM, Si-hyuk LEE, Sang-yeob SONG, Cheol-soo SONE, Hak-hwan KIM, Jin-hyun LEE
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Patent number: 9099631Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: January 9, 2015Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20150125983Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: May 7, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Publication number: 20150115281Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: April 30, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Publication number: 20150104944Abstract: There is provided a method of forming patterns for a semiconductor device. The method sequentially forming a first mask layer and a second mask layer on a substrate. The method also includes forming a second mask pattern layer by patterning the second mask layer. The method further includes forming a first mask pattern layer having a negative slope portion, by etching the first mask layer exposed through the second mask pattern layer. The method also includes forming a thin film layer on the substrate exposed through the first mask pattern layer.Type: ApplicationFiled: May 13, 2014Publication date: April 16, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Won PARK, Ju Hyun KIM, Yu Seung KIM, Sang Yeob SONG, Tae Hyun LEE