Patents by Inventor Sang-Yeol Kang

Sang-Yeol Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12094924
    Abstract: A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).
    Type: Grant
    Filed: January 3, 2022
    Date of Patent: September 17, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoo Ho Jung, Sang Yeol Kang, Su Hwan Kim, Dong Kwan Baek, Yu Kyung Shin, Won Sik Choi
  • Patent number: 12089397
    Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
    Type: Grant
    Filed: May 17, 2023
    Date of Patent: September 10, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
  • Publication number: 20240274131
    Abstract: An example electronic device includes a housing; a touchscreen display; a microphone; at least one speaker; a button disposed on a portion of the housing or set to be displayed on the touchscreen display; a wireless communication circuit; a processor; and a memory. When a user interface is not displayed on the touchscreen display, the electronic device enables a user to receive a user input through the button, receives user speech through the microphone, and then provides data on the user speech to an external server. An instruction for performing a task is received from the server. When the user interface is displayed on the touchscreen display, the electronic device enables the user to receive the user input through the button, receives user speech through the microphone, and then provides data on the user speech to the external server.
    Type: Application
    Filed: April 8, 2024
    Publication date: August 15, 2024
    Inventors: Sang-Ki KANG, Jang-Seok SEO, Kook-Tae CHOI, Hyun-Woo KANG, Jin-Yeol KIM, Chae-Hwan LI, Kyung-Tae KIM, Dong-Ho JANG, Min-Kyung HWANG
  • Patent number: 12059762
    Abstract: In a system for automatically manufacturing a pipe spool, when information on a pipe spool is input to a control unit, manufacturing of a spool pipe by cutting an original pipe, processing of a spool pipe, processing of a connection member, manufacturing of a straight pipe spool by welding a spool pipe to a connection member, and manufacturing a three-dimensional spool by welding a straight pipe spool to the other straight pipe spool or a connection member may be automatically performed by a sensor, an automatic device or a robot included in each process and the control unit connected to each of the devices.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: August 13, 2024
    Assignees: HDHYUNDAI ROBOTICS CO., LTD, SAMSUNG E&A CO., LTD
    Inventors: Sung-Gi Kang, Young-Choon Kwak, Sun-Gyu Hwang, Sung-Keun Kim, Roh-Hyun Myung, Sang-Hun Rim, Byeong-Yeol Lee, Sang-Pil Cheon, Chan-Won Seo, Jung-Hoon Choo, Min-Kue Choi
  • Patent number: 11812601
    Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: November 7, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Goo Kang, Sang Hyuck Ahn, Sang Yeol Kang, Jin-Su Lee, Hyun-Suk Lee, Gi Hee Cho, Hong Sik Chae
  • Publication number: 20230292496
    Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
    Type: Application
    Filed: May 17, 2023
    Publication date: September 14, 2023
    Inventors: CHANG MU AN, SANG YEOL KANG, YOUNG-LIM PARK, JONG-BOM SEO, SE HYOUNG AHN
  • Patent number: 11711915
    Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: July 25, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
  • Patent number: 11705483
    Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: July 18, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Sun Kim, Sang-Yeol Kang, Kyoo-Ho Jung, Kyu-Ho Cho, Hyo-Sik Mun
  • Patent number: 11588012
    Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: February 21, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-goo Kang, Sang-yeol Kang, Youn-soo Kim, Jin-su Lee, Hyung-suk Jung, Kyu-ho Cho
  • Publication number: 20230008127
    Abstract: A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).
    Type: Application
    Filed: January 3, 2022
    Publication date: January 12, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyoo Ho JUNG, Sang Yeol KANG, Su Hwan KIM, Dong Kwan BAEK, Yu Kyung SHIN, Won Sik CHOI
  • Patent number: 11527604
    Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: December 13, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Lim Park, Se Hyoung Ahn, Sang Yeol Kang, Chang Mu An, Kyoo Ho Jung
  • Patent number: 11488958
    Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: November 1, 2022
    Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
  • Publication number: 20220336574
    Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang Yeol KANG, Kyu Ho CHO, Han Jin LIM, Cheol Seong HWANG
  • Patent number: 11411069
    Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: August 9, 2022
    Assignees: Samsung Electronics Co., Ltd., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Sang Yeol Kang, Kyu Ho Cho, Han Jin Lim, Cheol Seong Hwang
  • Publication number: 20220130835
    Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
    Type: Application
    Filed: January 7, 2022
    Publication date: April 28, 2022
    Inventors: CHANG MU AN, SANG YEOL KANG, YOUNG-LIM PARK, JONG-BOM SEO, SE HYOUNG AHN
  • Patent number: 11244946
    Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: February 8, 2022
    Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
  • Publication number: 20220037325
    Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.
    Type: Application
    Filed: April 1, 2021
    Publication date: February 3, 2022
    Inventors: Jun Goo Kang, Sang Hyuck Ahn, Sang Yeol Kang, Jin-Su Lee, Hyun-Suk Lee, Gi Hee Cho, Hong Sik Chae
  • Publication number: 20210343832
    Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
    Type: Application
    Filed: July 2, 2021
    Publication date: November 4, 2021
    Inventors: EUN-SUN KIM, SANG-YEOL KANG, KYOO-HO JUNG, KYU-HO CHO, HYO-SIK MUN
  • Publication number: 20210296429
    Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
    Type: Application
    Filed: June 9, 2021
    Publication date: September 23, 2021
    Inventors: Young-Lim PARK, Se Hyoung AHN, Sang Yeol KANG, Chang Mu AN, Kyoo Ho JUNG
  • Patent number: 11088240
    Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: August 10, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Sun Kim, Sang-Yeol Kang, Kyoo-Ho Jung, Kyu-Ho Cho, Hyo-Sik Mun