Abstract: The present invention relates generally to the field of molecular biology and concerns a method for enhancing plant yield-related traits relative to control plants. More specifically, the present invention concerns a method for enhancing yield related traits in plants relative to control plants, by modulating, preferably increasing, expression in the roots of a plant, of a nucleic acid sequence encoding a 2-cysteine peroxiredoxin (2-Cys PRX); or by modulating expression of a nucleic acid encoding an ANN polypeptide in a plant. The present invention also concerns plants having modulated, preferably increased, expression in the roots, of a nucleic acid sequence encoding a 2-Cys PRX, or having modulated expression of a nucleic acid encoding an ANN polypeptide, which plants have enhanced yield-related traits relative to control plants. The invention also provides constructs useful in the methods of the invention.

Abstract: There is provided a composition including a veratric acid for preventing or treating inflammatory diseases. The veratric acid of the present invention has an excellent effect of inhibiting production of nitric oxide, an excellent activity of inhibiting production of IL-1? as a pro-inflammatory cytokine, and an excellent effect of inhibiting phosphorylation of MAPK, NF-?B, GSK-3?, and c-Raf in a macrophage cell stimulated by a stimulation factor that causes an inflammatory reaction. Thus, it can be used for development of medicines for treating inflammatory diseases which can be caused by excessive inflammatory reactions. Further, the veratric acid of the present invention does not induce toxicity to cells and is stable in the body. Thus, it can be used as a material of a health functional food capable of preventing or improving inflammatory diseases.

Abstract: An apparatus for generating microbubbles in water from a mixed fluid in which a gas and a liquid are mixed. The apparatus includes a cylindrical body which includes an inlet coupled to a hose, an outlet, and a cylindrical space section defined therein. The diameter of the space section is greater than each diameter of the inlet and the outlet. An inner container member is fixed in the space section such that a tubular passage is formed. A circular first collision section is provided on the inner container member. The mixed fluid that has been introduced through the inlet collides against the first collision section and is thus stirred. An “L” shaped second collision section is provided on the inner corner of the body adjacent to the outlet. The mixed fluid that has passed through the passage collides against the second collision section and is thus stirred.

Abstract: An apparatus for generating microbubbles in water from a mixed fluid in which a gas and a liquid are mixed. The apparatus includes a cylindrical body which includes an inlet coupled to a hose, an outlet, and a cylindrical space section defined therein. The diameter of the space section is greater than each diameter of the inlet and the outlet. An inner container member is fixed in the space section such that a tubular passage is formed. A circular first collision section is provided on the inner container member. The mixed fluid that has been introduced through the inlet collides against the first collision section and is thus stirred. An “L” shaped second collision section is provided on the inner corner of the body adjacent to the outlet. The mixed fluid that has passed through the passage collides against the second collision section and is thus stirred.

Abstract: A thin film transistor may include a passivation layer formed of a metal-containing conductive material. The thin film transistor includes: a gate electrode; a gate insulating layer positioned on the gate electrode; a channel layer positioned on the gate insulating layer; a source electrode and a drain electrode which are in contact with the channel layer while being spaced apart from each other; and a passivation layer including a metal-containing conductive material and positioned on the channel layer while being spaced apart from each of the source electrode and the drain electrode. The passivation layer serves to prevent transmission of light, oxygen, water and/or impurities into the channel layer and to improve the electrical characteristics of the thin film transistor.

Abstract: The present invention relates generally to the field of molecular biology and concerns a method for enhancing plant yield-related traits relative to control plants. More specifically, the present invention concerns a method for enhancing yield related traits in plants relative to control plants, by modulating, preferably increasing, expression in the roots of a plant, of a nucleic acid sequence encoding a 2-cysteine peroxiredoxin (2-Cys PRX); or by modulating expression of a nucleic acid encoding an ANN polypeptide in a plant. The present invention also concerns plants having modulated, preferably increased, expression in the roots, of a nucleic acid sequence encoding a 2-Cys PRX, or having modulated expression of a nucleic acid encoding an ANN polypeptide, which plants have enhanced yield-related traits relative to control plants. The invention also provides constructs useful in the methods of the invention.

Abstract: There is provided a thin film transistor (TFT) capable of improving electron mobility and minimizing the occurrence of hysteresis due to traps. The TFT includes a channel layer and a gate insulating layer, wherein the channel layer is made of an oxide semiconductor. In the TFT, the gate insulating layer includes one or more first dielectric layer and a second dielectric layer, and the first dielectric layer has a dielectric constant different from that of the second dielectric layer.

Abstract: The present invention provides a power supply and data repeater device, and in particular to a power supply and data repeater device for a portable communication terminal using a peripheral device connection port of the computer system to the portable communication terminal and/or other portable devices as operation and/or charging power, and which repeats data among the computer system, portable communication terminal and/or computer peripheral device. In addition, the present invention is directed to a keyboard device having a portable communication terminal connection structure, and more particularly, a keyboard device having a portable communication terminal connection structure which accesses a portable communication terminal (CDMA and GSM cellular phones, PCS terminal and PDA terminal) to input and transmit short messages, and which supplies operation power and charging power to the portable communication terminal.

Abstract: The present invention discloses a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film. The object of the present invention is to provide a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film which deposits Zn3P2 on a ZnO thin film and forms a p-type material constituting a device by using thermal diffusion for the Zn3P2 in order to fabricate an effective p-type material. The method of forming a p-n junction on a ZnO thin film, in a light emitting device having a sapphire substrate as a base substrate, comprises the steps of: cladding the sapphire substrate with a n-type ZnO thin film; depositing a Zn3P2 thin film on the n-type ZnO thin film; forming a p-type ZnO thin film by irradiating a laser on the upper surface of the Zn3P2 thin film, decomposing the Zn3P2 thin film and diffusing the same on the n-type ZnO thin film; and forming an electrode on the n-type ZnO thin film and the p-type ZnO thin film respectively.

Abstract: The present invention discloses a Zn3P2—ZnO mixture thin film for photoluminescence and a method of fabricating the same. The object of the present invention is to provide a Zn3P2—ZnO mixture thin film for photoluminescence and a method of fabricating the same which can generate the photoluminescence characteristics in a navy blue region by depositing a semiconductor mixture thin film of ZnO and Zn3P2 with a predetermined mole ratio on the upper surface of a sapphire substrate by pulsed laser deposition. According to the Zn3P2—ZnO mixture thin film for photoluminescence and the method of fabricating the same, a thin film having a flat surface property and the effective photoluminescence characteristics of a navy blue region can be fabricated by growing a thin film of a mixture material on a sapphire substrate by a deposition method using laser ablation by using a target of a mixture of ZnO and Zn3P2 having a mole ratio of 1:9.

Abstract: The present invention discloses a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film. The object of the present invention is to provide a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film which deposits Zn3P2 on a ZnO thin film and forms a p-type material constituting a device by using thermal diffusion for the Zn3P2 in order to fabricate an effective p-type material. The method of forming a p-n junction on a ZnO thin film, in a light emitting device having a sapphire substrate as a base substrate, comprises the steps of: cladding the sapphire substrate with a n-type ZnO thin film; depositing a Zn3P2 thin film on the n-type ZnO thin film; forming a p-type ZnO thin film by irradiating a laser on the upper surface of the Zn3P2 thin film, decomposing the Zn3P2 thin film and diffusing the same on the n-type ZnO thin film; and forming an electrode on the n-type ZnO thin film and the p-type ZnO thin film respectively.

Abstract: The present invention relates to a short wavelength ZnO light emitting device and the manufacturing method thereof, which forms materials of p-type by doping Zn on InP, deposits a thin layer of ZnO on an upper surface of the doped layer and forms a p-n junction, thereby obtaining a stable crystal structure and enhances the effectiveness. The short wavelength ZnO light emitting device comprises a Zn doped InP layer of p-type formed by doping Zn on a substrate of InP and then replacing In with Zn; and a ZnO layer deposited on the Zn doped InP substrate whereby a forward bias voltage is applied to the doped InP and the ZnO layers, which are doped Zn, thereby obtaining a light emitting characteristic of short wavelength. A ZnO-based semiconductor light emitting device can be used as a blue and purple light source, and is expected to have more excellent characteristics in displays.

Abstract: A production line of an air conditioner mounted with a work bench for mass-producing indoor units and outdoor units, the work bench including a pallet supply section; an outdoor unit work part mounted at one side of the pallet supply section with a parts assembly section, refrigerant tube vacuum forming and refrigerant infusion section, refrigerant infusion tube removal section, control unit assembly section, refrigerant leakage inspection section, cabinet assembly section, packing section, forwarding and loading section in that order; an indoor unit work part mounted at the other side of the pallet supply section with first pallet feeding section, parts assembly section, noise inspection section, second pallet feeding section, packing section and forwarding and loading section in that order, and integrally installed from parts assembly section of the outdoor unit work part to cabinet assembly section; performance inspection section mounted between the cabinet assembly section and packing section of the outdo