Patents by Inventor Sang Yi

Sang Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7368392
    Abstract: A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: May 6, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Jinhan Choi, Shashank Deshmukh, Sang Yi, Kyeong-Tae Lee
  • Publication number: 20070284749
    Abstract: A semiconductor device and a method of manufacturing the same which yields high reliability and a high manufacturing yield. The semiconductor device includes a metal line layer having a plurality of metal line patterns spaced apart from each other, and at least one underlying layer under the metal line layer, wherein the space between two adjacent metal line patterns has a sufficient width to prevent a crack from occurring in one or more of the underlying layers. The cracking of an underlying layer may also be prevented by providing a slit in a direction parallel to the space between two adjacent metal line patterns at a sufficient distance from the space between the two adjacent metal line patterns.
    Type: Application
    Filed: June 1, 2007
    Publication date: December 13, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Yi, Young Kim
  • Patent number: 7297376
    Abstract: A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.
    Type: Grant
    Filed: July 7, 2006
    Date of Patent: November 20, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Kang Sub Yim, Kelvin Chan, Nagarajan Rajagopalan, Josephine Ju-Hwei Chang Liu, Sang H. Ahn, Yi Zheng, Sang In Yi, Vu Ngoc Tran Nguyen, Alexandros T. Demos
  • Publication number: 20070174893
    Abstract: An apparatus for initializing a digital broadcasting receiver and method thereof are disclosed, by which the digital broadcasting receiver provided with virtual machine to process additionally provided services can be quickly initialized. The present invention includes generating a first task required for initializing the digital broadcasting receiver in order to perform an A/V broadcasting service, generating a second task required for initializing a virtual machine installed in the digital broadcasting receiver to perform a data broadcasting service, initializing the digital broadcasting receiver included in the digital broadcasting receiver by executing the first task and initializing the virtual machine by executing the second task after the digital broadcasting receiver is initialized.
    Type: Application
    Filed: January 26, 2007
    Publication date: July 26, 2007
    Applicant: LG ELECTRONICS INC.
    Inventors: Sang Yi Lee, Jin Pil Kim
  • Publication number: 20070050817
    Abstract: A digital television signal, method of processing the same in a transmitter and receiver, digital broadcast transmitter and digital broadcast receiver are disclosed, in which if a prescribed program having been broadcast by a prescribed broadcast medium is retransmitted by another broadcast medium, a field indicating an original broadcast medium having broadcast the corresponding program is added. The present invention includes a step (a) of receiving an service information table including an original media type field, a step (b) of extracting the original media type field indicating an original broadcast medium of a retransmitted program by parsing the service information table, and a step (c) of displaying the original broadcast medium of the retransmitted program.
    Type: Application
    Filed: August 29, 2006
    Publication date: March 1, 2007
    Inventor: Sang Yi Lee
  • Publication number: 20060129631
    Abstract: A method for controlling a media message upload through a wireless communication network is disclosed. In one aspect of the present invention, when a communication terminal uploads particular media data to an application server, the communication terminal uploads the media data by organizing it into a plurality of segments and one response message is issued by the application server for a predefined number of segments. If an upload error occurs, the upload can be easily resumed without verification of the uploaded data based on a sequence number of a segment provided by the application server. When a data upload is cancelled intentionally befA method for controlling a media message upload through a wireless communication network is disclosed.
    Type: Application
    Filed: January 20, 2004
    Publication date: June 15, 2006
    Inventors: Dong Na, Hong Yoon, Sang Sohn, Woo Yang, Sang Yi
  • Publication number: 20050140637
    Abstract: A common voltage driving circuit of an in-plane switching (IPS) mode liquid crystal display (LCD) device includes a first common voltage output part for swinging and outputting positive (+) and negative (?) common voltages on odd numbered common lines, a second common voltage output part for swinging and outputting negative (?) and positive (+) common voltages on even numbered common lines, an intermediate level output part for outputting an intermediate level voltage between the positive (+) and negative (?) common voltages output from the first and second common voltage output parts, a first switching part for selecting one out of the voltages output from the first common voltage output part and the intermediate level output part, and outputting the selected one, and a second switching part for selecting one out of the voltages output from the second common voltage output part and the intermediate level output part, and outputting the selected one.
    Type: Application
    Filed: December 21, 2004
    Publication date: June 30, 2005
    Inventor: Sang Yi
  • Publication number: 20050009358
    Abstract: A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.
    Type: Application
    Filed: April 23, 2004
    Publication date: January 13, 2005
    Inventors: Jinhan Choi, Shashank Deshmukh, Sang Yi, Kyeong-Tae Lee
  • Patent number: 6638874
    Abstract: One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method includes steps of: (a) etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer; and (b) etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: October 28, 2003
    Assignee: Applied Materials, Inc
    Inventors: Sang In Yi, Seowoo Nam, Kenlin Huang, Padmapani C. Nallan
  • Publication number: 20030186556
    Abstract: One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method includes steps of: (a) etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer; and (b) etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen.
    Type: Application
    Filed: July 17, 2002
    Publication date: October 2, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Sang In Yi, Seowoo Nam, Kenlin Huang, Padmapani C. Nallan
  • Patent number: 6436319
    Abstract: A method for preparing a hollow fiber-type separation membrane from high density polyethylene is provided, which includes the steps of: melt-spinning a mixture of a high density polyethylene and a diluting agent to produce a phase-separated undrawn hollow fiber; detecting a tensile strength of the undrawn fiber during an alternative and repetitive winding and unwinding procedure between two bobbins, said undrawn fiber being drawn during the alternative and repetitive winding and unwinding procedure; reducing a rotation speed of one of the two bobbins when the detected tensile strength is larger than a predetermined value; and increasing a rotation speed of one of the two bobbins when the detected tensile strength is smaller than the predetermined value to yield the hollow fiber-type separation membrane.
    Type: Grant
    Filed: January 13, 2000
    Date of Patent: August 20, 2002
    Assignee: Agency for Technology and Standards
    Inventors: Hyang Sun, Yong Sang Yi, Kyu Bong Rhee
  • Patent number: 6078679
    Abstract: An individual information protecting card is formed by multiple image frequency transformation of the invention is a system utilizing a simplicity of bar cade and an image property of hologram in complexity which is a frequency card being simple in construction. Data to be recorded to the protecting card utilizes an image-based system different from existing numeric cipher code-based system. The image to be used can use not only use a binary image for letters, but also can use continuous grey level as photograph. However, the difference is not in the frequency card exposed externally. Accordingly, expansion to image protecting form is possible and application to a system for managing an information by allocating special image information by individual and by article list is possible. Output of card construction system is made by a reading card possessed by a system operator, a resolution card for increasing of resolution, and user's card being a protecting card.
    Type: Grant
    Filed: August 1, 1996
    Date of Patent: June 20, 2000
    Inventors: Sang Yi Yi, Kwang Hoon Cha, Chung Sang Ryu