Patents by Inventor Sang Yong Jeon

Sang Yong Jeon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10134583
    Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: November 20, 2018
    Assignees: Samsung Electronics Co., Ltd., DNF Co., Ltd.
    Inventors: Sunhye Hwang, Myong Woon Kim, Younjoung Cho, Sang Ick Lee, Sang Yong Jeon, In Kyung Jung, Wonwoong Chung, Jungsik Choi
  • Patent number: 10088652
    Abstract: An imaging lens is provided comprising: a first lens having a negative refractive power; a second lens having a positive refractive power and having a convex object side surface; a third lens having a negative refractive power; a fourth lens having a convex image side surface; and a fifth lens having an image side surface, the image side surface having an inflection point, wherein, the first, second, third, fourth, and fifth lenses are sequentially arranged from a front end of the imaging lens to a rear end of the imaging lens, and the imaging lens.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: October 2, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-yong Jeon, Sung-wook Choi
  • Publication number: 20180155372
    Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a Cl to C4 linear or branched alkyl group.
    Type: Application
    Filed: November 30, 2017
    Publication date: June 7, 2018
    Applicant: DNF Co., Ltd.
    Inventors: Seung-min RYU, Youn-soo KIM, Jae-soon LIM, Youn-joung CHO, Myong-woon KIM, Kang-yong LEE, Sang-ick LEE, Sang-yong JEON
  • Patent number: 9916974
    Abstract: Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: March 13, 2018
    Assignee: DNF CO., LTD.
    Inventors: Se Jin Jang, Sang-Do Lee, Jong Hyun Kim, Sung Gi Kim, Sang Yong Jeon, Byeong-il Yang, Jang Hyeon Seok, Sang Ick Lee, Myong Woon Kim
  • Publication number: 20170207083
    Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.
    Type: Application
    Filed: November 11, 2016
    Publication date: July 20, 2017
    Applicants: Samsung Electronics Co., Ltd., DNF Co., Ltd.
    Inventors: Sunhye HWANG, Myong Woon KIM, Younjoung CHO, Sang lck LEE, Sang Yong JEON, In Kyung JUNG, Wonwoong CHUNG, Jungsik CHOI
  • Publication number: 20170125243
    Abstract: Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).
    Type: Application
    Filed: June 4, 2015
    Publication date: May 4, 2017
    Applicant: DNF CO., LTD.
    Inventors: Se Jin JANG, Sang-Do LEE, Jong Hyun KIM, Sung Gi KIM, Sang Yong JEON, Byeong-il YANG, Jang Hyeon SEOK, Sang Ick LEE, Myong Woon KIM
  • Publication number: 20160246033
    Abstract: An imaging lens is provided comprising: a first lens having a negative refractive power; a second lens having a positive refractive power and having a convex object side surface; a third lens having a negative refractive power; a fourth lens having a convex image side surface; and a fifth lens having an image side surface, the image side surface having an inflection point, wherein, the first, second, third, fourth, and fifth lenses are sequentially arranged from a front end of the imaging lens to a rear end of the imaging lens, and the imaging lens.
    Type: Application
    Filed: February 4, 2016
    Publication date: August 25, 2016
    Inventors: Sang-yong JEON, Sung-wook CHOI
  • Patent number: 8048483
    Abstract: A method to deposit a thin film on a flexible polymer substrate at room temperature comprising heating source vapor, which is vaporized by an evaporator, in a shower head in a reaction chamber so that the source vapor is thermally decomposed to be converted into the nano-size single phase; and depositing the source vapor in the nano-size single phase on the flexible polymer substrate which is not separately heated.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: November 1, 2011
    Assignee: The Industry & Academic Cooperation in Chungnam National University (IAC)
    Inventors: Soon-Gil Yoon, Nak-Jin Seong, Sang-Yong Jeon
  • Publication number: 20080193642
    Abstract: A method to deposit a thin film on a flexible polymer substrate at room temperature comprising heating source vapor, which is vaporized by an evaporator, in a shower head in a reaction chamber so that the source vapor is thermally decomposed to be converted into the nano-size single phase; and depositing the source vapor in the nano-size single phase on the flexible polymer substrate which is not separately heated.
    Type: Application
    Filed: April 5, 2007
    Publication date: August 14, 2008
    Applicant: THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY
    Inventors: Soon-Gil Yoon, Nak-Jin Seong, Sang-Yong Jeon
  • Patent number: 7088707
    Abstract: A method is used for setting a R-P link for data transmission/reception in a mobile communication system and for setting a R-P link between packet control function (PCF) and packet data serving node (PDSN) in a mobile communication system that connects a radio network with a packet network. The method first transmits a response request message from the PCF to identify the status of two or more PDSNs in the system, then measures the RTDs of those PDSNs responded to the response request message. The method subsequently prepares a list of PDSNs that satisfy a reference value among the measured RTDs and determines whether the subscriber's PDSN exists in the list of PDSNs. Finally, the method performs a R-P link setup using the prepared list of PDSN in accordance with a determined result.
    Type: Grant
    Filed: October 9, 2002
    Date of Patent: August 8, 2006
    Assignee: LG Electronics Inc.
    Inventor: Sang Yong Jeon
  • Publication number: 20030227921
    Abstract: A system and method for controlling a data call traffic frame in a mobile communication system assigns a sequence number to the traffic frame transmitted and received between the SDU and the PCF. This allows for a lost traffic frame to be easily detected. Because lost traffic frames can be detected and re-transmitted between the SDU and PCF, the lost traffic frame can be restored without using a radio section. Thus, transmission reliability between the SDU and PCF can be improved and a waste of radio resources can be prevented.
    Type: Application
    Filed: June 9, 2003
    Publication date: December 11, 2003
    Applicant: LG ELECTRONICS INC.
    Inventor: Sang-Yong Jeon
  • Publication number: 20030123395
    Abstract: A method is used for setting a R-P link for data transmission/reception in a mobile communication system and for setting a R-P link between packet control function (PCF) and packet data serving node (PDSN) in a mobile communication system that connects a radio network with a packet network. The method first transmits a response request message from the PCF to identify the status of two or more PDSNs in the system, then measures the RTDs of those PDSNs responded to the response request message. The method subsequently prepares a list of PDSNs that satisfy a reference value among the measured RTDs and determines whether the subscriber's PDSN exists in the list of PDSNs. Finally, the method performs a R-P link setup using the prepared list of PDSN in accordance with a determined result.
    Type: Application
    Filed: October 9, 2002
    Publication date: July 3, 2003
    Applicant: LG Electronics Inc.
    Inventor: Sang Yong Jeon