Abstract: The present invention relates to video encoding/decoding methods and device, wherein the video encoding method according to the invention comprises the following steps: acquiring information of peripheral blocks; setting the information about a current block based on the information of the peripheral blocks; and encoding the current block based on the set information, wherein the current block and the peripheral blocks may be a CU (coding unit).

Abstract: A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.

Abstract: An RF switch device and a method of manufacturing the same are disclosed. More particularly, an RF switch device in a stacked configuration and a method of manufacturing the same seeking to reduce or eliminate a voltage imbalance, a condition in which different voltages are applied to different stages of the RF switch device, by forming air gaps on or over corresponding gate electrodes, in which each of the air gaps in a single stage has a different width.

Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device having an air gap over a gate electrode and a metal interconnect at a position higher than the air gap and that at least partially overlap the air gap in the vertical direction, thereby preventing exposure of an upper portion of the air gap in subsequent processing.

Abstract: The present disclosure relates to a cutting insert, and a cutting insert according to the present disclosure comprises: an upper surface and a lower surface oriented in opposite directions; a first and a second shorter side surface connecting the upper surface and the lower surface to each other and oriented in opposite directions; a first and a second longer side surfaces connecting the upper surface and the lower surface to each other, connecting the first and the second shorter side surfaces to each other, oriented in opposite directions, and being longer than the first and the second shorter side surfaces; and a through hole extending through the upper surface and the lower surface, wherein when viewed toward the upper surface, the first longer side surface has two side portions, each side portion having an inclined shape with reference to the center portion.

Abstract: Provided is an RF switch device (100) in which body contact regions (190) are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region (110) so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.

Abstract: A system has an input voltage source, a power stage coupled to the input voltage source, a load coupled to an output node of the power stage and a control circuit, the control circuit implemented on a semiconductor die and including: an error amplifier having a first input, a second input and an output; a voltage divider coupled to the output node and configured to provide an output voltage sense value to the first input of the error amplifier; and a programmable reference voltage circuit with an output coupled to the second input of the error amplifier. The programmable reference voltage circuit includes: a reference voltage source; scaling circuit components between the reference voltage source and the second input of the error amplifier; and a switch between the reference voltage source and the second input of the error amplifier. The control circuit is coupled to the power stage and is configured to generate a control signal for switches of the power stage.

Abstract: A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.

Abstract: A system has an input voltage source, a power stage coupled to the input voltage source, a load coupled to an output node of the power stage and a control circuit, the control circuit implemented on a semiconductor die and including: an error amplifier having a first input, a second input and an output; a voltage divider coupled to the output node and configured to provide an output voltage sense value to the first input of the error amplifier; and a programmable reference voltage circuit with an output coupled to the second input of the error amplifier. The programmable reference voltage circuit includes: a reference voltage source; scaling circuit components between the reference voltage source and the second input of the error amplifier; and a switch between the reference voltage source and the second input of the error amplifier. The control circuit is coupled to the power stage and is configured to generate a control signal for switches of the power stage.

Abstract: The present invention relates to video encoding/decoding methods and device, wherein the video encoding method according to the invention comprises the following steps: acquiring information of peripheral blocks; setting the information about a current block based on the information of the peripheral blocks; and encoding the current block based on the set information, wherein the current block and the peripheral blocks may be a CU (coding unit).

Abstract: An intra prediction mode encoding and decoding method, an image decoding device, and an image encoding device operate by deriving most probable modes (MPMs) from surrounding prediction units adjacent to a current prediction unit and deriving an intra prediction mode of the current prediction unit on the basis of an MPM flag indicating whether an MPM having the same prediction mode as the intra prediction mode of the current prediction unit exists among the derived MPMs.

Abstract: At least some aspects of the present disclosure provide for a system. In some examples, the system includes a pulse width modulation (PWM) generator configured to generate a PWM signal. The PWM generator generates the PWM signal by generating a first signal having a first dithering profile and a first frequency bandwidth, generating a second signal having a second dithering profile and a second frequency bandwidth greater than the first frequency bandwidth, modulating the second signal with the first signal to generate a dual random spread spectrum signal, and generating the pulse width modulation signal according to the dual random spread spectrum signal.

Abstract: The present invention relates to video encoding/decoding methods and device, wherein the video encoding method according to the invention comprises the following steps: acquiring information of peripheral blocks; setting the information about a current block based on the information of the peripheral blocks; and encoding the current block based on the set information, wherein the current block and the peripheral blocks may be a CU (coding unit).

Abstract: An intra prediction mode encoding and decoding method, an image decoding device, and an image encoding device operate by deriving most probable modes (MPMs) from surrounding prediction units adjacent to a current prediction unit and deriving an intra prediction mode of the current prediction unit on the basis of an MPM flag indicating whether an MPM having the same prediction mode as the intra prediction mode of the current prediction unit exists among the derived MPMs.

Abstract: At least some aspects of the present disclosure provide for a system. In some examples, the system includes a pulse width modulation (PWM) generator configured to generate a PWM signal. The PWM generator generates the PWM signal by generating a first signal having a first dithering profile and a first frequency bandwidth, generating a second signal having a second dithering profile and a second frequency bandwidth greater than the first frequency bandwidth, modulating the second signal with the first signal to generate a dual random spread spectrum signal, and generating the pulse width modulation signal according to the dual random spread spectrum signal.

Abstract: The technical problem to be solved by the present disclosure is to provide a single-sided high feed cutting insert which can have increased edge strength and reduced cutting load so as to be suitable for high feed machining. To this end, the single-sided high feed cutting insert of the present disclosure comprises: a short cutting edge disposed between a major surface and a short lateral surface; a long cutting edge disposed between the major surface and a long lateral surface; and a corner cutting edge disposed between the short cutting edge and the long cutting edge, wherein the short cutting edge has an outwardly convex curved shape when viewed from the major surface, and a minor surface has a straight shape when viewed from the short and long lateral surfaces, respectively.

Abstract: The present disclosure's technical object is to provide a high feed cutting insert capable of providing a sufficient entering angle while ensuring rigidity of a cutting tool's bottom part.

Abstract: Provided is an RF switch device (100) in which body contact regions (190) are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region (110) so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.